DS22001 Rev. E-4 1 of 2 1N914 / 1N914A / 1N914B
1N914 / 1N914A / 1N914B
FAST SWITCHING
DIODE
Features
·Fast Switching Speed
·High Reliability
·High Conductance
·For General Purpose Switching Applications
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage VR(RMS) 53 V
Forward Continuous Current 1N914
(Note 1) 1N914A/B IFM 150
300 mA
Average Rectified Output Current 1N914
(Note 1) 1N914A/B IO75
200 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0s
1N914 @ t = 1.0ms
1N914A/B @ t = 1.0ms
IFSM
1.0
1.0
4.0
A
Power Dissipation (Note 1)
Derate Above 25°CPd500
1.68
mW
mW/°C
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 300 K/W
Operating and Storage Temperature Range Tj,T
STG -65 to +175 °C
·Case: DO-35, Glass
·Terminals: Solderable per MIL-STD-202,
Method 208
·Marking: Type Number
·Weight: 0.013 grams (approx.)
Mechanical Data
Maximum Ratings @ TA= 25°C unless otherwise specified
Notes: 1. Valid provided that lead are kept at ambient temperature at a distance of 8.0mm.
AA
B
C
D
DO-35
Dim Min Max
A25.40 ¾
B¾4.00
C¾0.60
D¾2.00
All Dimensions in mm
Characteristic Symbol Min Max Unit Test Condition
Maximum Forward Voltage 1N914B
1N914B
1N914
1N914A
VFM
0.62
¾
¾
¾
0.72
1.0
1.0
1.0
V
IF= 5.0mA
IF= 100mA
IF= 10mA
IF= 20mA
Maximum Peak Reverse Current IRM ¾
5.0
50
25
mA
mA
nA
VR= 75V
VR= 20V, Tj= 150°C
VR= 20V
Capacitance Cj¾4.0 pF VR= 0, f = 1.0MHz
Reverse Recovery Time trr ¾4.0 ns IF= 10mA to IR=1.0mA
VR= 6.0V, RL= 100W
Electrical Characteristics @ TA= 25°C unless otherwise specified
DS22001 Rev. E-4 2 of 2 1N914 / 1N914A / 1N914B
10
1.0
100
1000
0.1
0.01
01
2
I , INSTANTANE
O
US F
O
RWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics 1N914B
F
T = 100°C
jT = 25°C
j
10
1.0
100
1000
0.1
0.01
012
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fi
g
. 1 Forward Characteristics 1N914, 1N914A
F
T = 100°C
jT = 25°C
j
1
10
100
1000
10,000
0 100 200
I , LEAKAGE CURRENT (nA)
R
T , JUNCTION TEMPERATURE ( C)
Fig. 3 Leakage Current vs Junction Temperature
j
°
V = 20V
R
