2N6212 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)300 V(BR)CBO (V)350 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)20# Maximum Operating Temp (oC)200o I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)315 V(CE)sat Max. (V)1.6 @I(C) (A) (Test Condition)1.0 @I(B) (A) (Test Condition)125m h(FE) Min. Current gain.10 h(FE) Max. Current gain.100 @I(C) (A) (Test Condition)1.0 @V(CE) (V) (Test Condition)3.2 f(T) Min. (Hz) Transition Freq20M @I(C) (A) (Test Condition)200m @V(CE) (V) (Test Condition)10 t(d) Max. (s) Delay time. t(r) Max. (s) Rise time600n t(on) Max. (s) On time.