2N6212 Transistors
Si PNP Power BJT
Military/High-RelN
V(BR)CEO (V)300
V(BR)CBO (V)350
I(C) Max. (A)2.0
Absolute Max. Power Diss. (W)20#
Maximum Operating Temp (øC)200õ
I(CBO) Max. (A)500u¶
@V(CBO) (V) (Test Condition)315
V(CE)sat Max. (V)1.6
@I(C) (A) (Test Condition)1.0
@I(B) (A) (Test Condition)125m
h(FE) Min. Current gain.10
h(FE) Max. Current gain.100
@I(C) (A) (Test Condition)1.0
@V(CE) (V) (Test Condition)3.2
f(T) Min. (Hz) Transition Freq20M
@I(C) (A) (Test Condition)200m
@V(CE) (V) (Test Condition)10
t(d) Max. (s) Delay time.
t(r) Max. (s) Rise time600n
t(on) Max. (s) On time.
t(s) Max. (s) Storage time.2.5u
t(f) Max. (s) Fall time.600n
t(off) Max. (s) Off time
Package StyleTO-66
Mounting StyleT
Pinout Equivalence Code3-4
Ckt. (Pinout) NumberTR00300004
Description