LESHAN RADIO COMPANY, LTD.
M40–1/2
1
3
2
BSS64LT1
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Driver Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 80 Vdc
Collector–Base V oltage V CBO 120 Vdc
Emitter–Base V oltage V EBO 5.0 Vdc
Collector Current — Continuous I C100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
BSS64LT1 = AM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO 80 — Vdc
(I C = 4.0 mAdc )
Collector–Base Breakdown V oltage V (BR)CBO 120 — Vdc
(I C = 100 µAdc )
Emitter–Base Breakdown V oltage V (BR)EBO 5.0 — Vdc
(I E = 100 µAdc )
Collector Cutoff Current I CBO nAdc
( V CB = 90 Vdc ) — 0.1
( T A = 150°C ) — 500
Emitter Cutoff Current I EBO — 200 nAdc
( V EB = 4.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
2
EMITTER
3
COLLECTOR
1
BASE
LESHAN RADIO COMPANY, LTD.
M40–2/2
BSS64LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS
DC Current Gain hFE 20 — —
(I C = 10 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation V oltage VCE(sat) Vdc
(I C = 4.0mAdc, I B = 0.4 mAdc) — 0.15
(I C = 50mAdc, I B = 15 mAdc) — 0.2
Forward Base–Emitter V oltage V BE(sat) ———
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T60 — MHz
(I C = 4.0 mAdc, V CE = 10 Vdc, f = 20 MHz)
Output Capacitance C ob —20pF
(V CB = 10 Vdc, f = 1.0 MHz)
