LVP640P N-Channel 200V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application DC-DC Converters UPS & Monitors High Power Switching Car Inventer BVDSS=200 V, RDS(ON=0.18, Typ=0.15 ID=18 A Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS 25 V TC=25 Continuous Drain Current TC=100 Pulsed Drain Current ID 18 A 11.4 IDM 72 A PD 140 W TJ, Tstg -55 to 150 Avalanche Current IAS 18 A Avalanche Energy with Single Pulse EAS 300 mJ Thermal Resistance-Junction to Ambient (max.) RJA 62.5 /W Thermal Resistance-Junction to Case RJC 0.9 Power Dissipation TC=25 Operating Junction and Storage Temperature Range a.Pulse width limited by safe operating area b.Starting Tj=25, L=1.32mH,IAS=18A,VDD=50V,RG=25 * The device mounted on 1in2 FR4 board with 2 oz copper Rev.0, Jan. 2011 LVP640P N-Channel 200V Power MOSFET Electrical Characteristics (TA =25Unless Otherwise Specified) Symbol Parameter Limit Min. Typ. BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250A 200 VGS(th) Gate Threshold Voltage VDS=VGS,ID=250A 2.0 IGSS Gate-Body Leakage VGS=25V IDSS Zero Gate Voltage Drain Current VDS=Max Rating,VGS=0V RDS(ON) Drain-Source On-Resistance VGS=10V,ID=9A 0.15 gfs Forward Transconductance VDS=30V,ID=9A 11 Max. Unit STATIC V 4.0 V 100 nA 1 A 0.18 S DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss 37 VDS=160V,VGS=10V, 48 nC 6.3 ID=18A 18.3 870 1130 165 215 Reverse Transfer Capacitance 60 80 td(on) Turn-On Delay Time 15 40 tr Turn-On Rise Time VDS=100V,ID=18A, 125 260 td(off) Turn-Off Delay Time RG=25 100 210 tf Turn-Off Fall Time 50 110 VDS=25V,VGS=0V, f=1MHz pF ns Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source current 18 ISM Pulsed Source Current 72 VSD Diode Forward voltage 1.5 trr Reverse Recovery Time Qrr Reverse Recovery Charge Note: Pulse test: pulse width<=300us,duty cycle<=2% Rev.0, Jan. 2011 Min. Typ. Max. Units A Test Condition Integral reverse PN diode in The MOSFET V IS=18A,VGS=0V 170 ns IF=18A,VGS=0V, 0.99 nC diF/dt=100A/s LVP640P N-Channel 200V Power MOSFET Rev.0, Jan. 2011 LVP640P N-Channel 200V Power MOSFET ypical Characteristics (TJ=25 Noted)) Rev.0, Jan. 2011 LVP640P N-Channel 200V Power MOSFET Test Circuit and Waveform Rev.0, Jan. 2011 LVP640P N-Channel 200V Power MOSFET Package Dimension Rev.0, Jan. 2011 LVP640P N-Channel 200V Power MOSFET Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC. Rev.0, Jan. 2011