L
VP640
P
N-Channel
200V
Power
MOSFET
R
e
v
.
0
,
J
an
.
1
F
eat
u
res:
‧
‧‧
‧
Ava
l
anche
Rugged
Techno
l
ogy
‧
‧‧
‧
Rugged
Gate
Ox
i
de
Techno
l
ogy
‧
‧‧
‧
H
i
gh
d
i/
dt
Capab
ili
ty
‧
‧‧
‧
I
mproved
Gate
Charge
A
ppli
cat
ion
‧
‧‧
‧
DC-DC
Converters
‧
‧‧
‧
UPS
&
Mon
i
tors
‧
‧‧
‧
H
i
gh
Power
Sw
i
tch
i
ng
‧
‧‧
‧
Car
I
nventer
B
VDSS
=
200
V,
R
DS(ON
）
））
）
=
0.18Ω,
Typ
=
0.15Ω
ID
=
18
A
Abso
l
ute
Max
i
mum
Rat
i
ngs
(T
A
=25
℃
Unless
O
t
herwise
No
t
ed)
Parameter Symbol
Limit Unit
Drain-Source
Voltage
V
DSS
200
V
Gate-Source
Voltage
V
GSS
±25
V
T
C
=25
℃
18
Continuous
Drain
Current
T
C
=100
℃
I
D
11.4
A
Pulsed
Drain
Current
I
DM
72
A
Power
Dissipation
T
C
=25
℃
P
D
140
W
Operating
Junction
and
Storage
Temperature
Range
T
J,
T
stg
-55
to
150
℃
Avalanche
Current
I
AS
18
A
Avalanche
Energy
with
Single
Pulse
E
AS
300
mJ
Thermal
Resistance-Junction
to
Ambient
(max.)
R
θJA
62.5
Thermal
Resistance-Junction
to
Case
R
θJC
0.9
℃
/W
a.Pulse
width
limited
by
safe
operating
area
b.Starting
Tj=25
℃
,
L=1.32mH,I
AS
=18A,V
DD
=50
V
,R
G
=25
Ω
*
The
device
moun
t
ed
on
1in
2
FR4
board
wi
t
h
2
oz
copper
L
VP640
P
N-Channel
200V
Power
MOSFET
R
e
v
.
0
,
J
an
.
1
E
l
ectr
i
ca
l
Character
i
st
i
cs
(T
A
=25
℃
Unless
O
t
herwise
Speci
f
ied)
Symbol
Parameter Limit Min.
Typ. Max. Unit
STATIC
BV
DSS
Drain-Source
Breakdown
Voltage
V
GS
=0V,I
D
=250µA
200
V
V
GS(th)
Gate
Threshold
Voltage
V
DS
=V
GS
,I
D
=250µA
2.0
4.0
V
I
GSS
Gate-Body
Leakage
V
GS
=±25V
±100
nA
I
DSS
Zero
Gate
Voltage
Drain
Current
V
DS
=Max
Rating,V
GS
=0V
1
µA
R
DS(ON)
Drain-Source
On-Resistance
V
GS
=10V,I
D
=9A
0.15
0.18
Ω
g
fs
Forward
Transconductance
V
DS
=30V,I
D
=9A
11
S
DYNAMIC
Qg
Total
Gate
Charge
37
48
Qgs
Gate-Source
Charge
6.3
Qgd
Gate-Drain
Charge
V
DS
=160V,V
GS
=10V,
I
D
=18A
18.3
nC
C
iss
Input
Capacitance
870
1130
C
oss
Output
Capacitance
165
215
C
rss
Reverse
Transfer
Capacitance
V
DS
=25V,V
GS
=0V,
f=1MHz
60
80
pF
t
d(on)
Turn-On
Delay
Time
15
40
t
r
Turn-On
Rise
Time
125
260
t
d(off)
Turn-Off
Delay
Time
100
210
t
f
Turn-Off
Fall
Time
V
DS
=100V,I
D
=18A,
R
G
=25
Ω
50
110
ns
Source-Dra
i
n
D
i
ode
Rat
i
ngs
and
Character
i
st
i
cs
Symbol
Characteristic
Min.
Typ.
Max.
Units
Test
Condition
I
S
Continuous
Source
current
18
I
SM
Pulsed
Source
Current
72
A
Integral
reverse
PN
diode
in
The
MOSFET
V
SD
Diode
Forward
voltage
1.5
V
I
S
=18A,V
GS
=0V
trr
Reverse
Recovery
Time
170
ns
Qrr
Reverse
Recovery
Charge
0.99
nC
I
F
=18A,V
GS
=0V,
di
F
/dt=100A/µs
Note:
Pulse
t
es
t:
pulse
wid
t
h<=300us
,
du
t
y
cycle<=2%
L
VP640
P
N-Channel
200V
Power
MOSFET
R
e
v
.
0
,
J
an
.
1
L
VP640
P
N-Channel
200V
Power
MOSFET
R
e
v
.
0
,
J
an
.
1
yp
i
ca
l
Character
i
st
i
cs
(
((
(
TJ
=
25
℃
Noted
)
))
)
L
VP640
P
N-Channel
200V
Power
MOSFET
R
e
v
.
0
,
J
an
.
1
Test
C
i
rcu
i
t
and
Waveform
L
VP640
P
N-Channel
200V
Power
MOSFET
R
e
v
.
0
,
J
an
.
1
P
acka
g
e
D
i
me
n
s
ion
L
VP640
P
N-Channel
200V
Power
MOSFET
R
e
v
.
0
,
J
an
.
1
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and specifications
at any time without notice. Customers should obtain and confirm the latest product
information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does LSC assume any liability for application assistance or
customer product design. LSC does not warrant or accept any liability with products which
are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of LSC.
LSC products are not authorized for use as critical components in life support devices or
systems without express written approval of LSC.