SCT20N120AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 m (typ., TJ=150 C), in an HiP247TM package Features 1 2 3 HiP247TM * * * AEC-Q101 qualified Very tight variation of on-resistance vs. temperature Very high operating temperature capability (TJ = 200 C) * * Very fast and robust intrinsic body diode Low capacitance Applications * * * * D(2, TAB) Motor drives EV chargers High voltage DC-DC converters Switch mode power supplies Description G(1) S(3) AM01475v1_noZen This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device's housing in the proprietary HiP247TM package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT20N120AG Product summary Order code Marking SCT20N120AG Package HiP247TM Packing Tube DS12516 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office. www.st.com SCT20N120AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 1200 V VGS Gate-source voltage -10 to 25 V Drain current (continuous) at TC = 25 C 20 A Drain current (continuous) at TC = 100 C 16 A Drain current (pulsed) 45 A PTOT Total power dissipation at TC = 25 C 175 W Tstg Storage temperature range ID ID IDM (1) Tj Operating junction temperature range -55 to 200 C C 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol DS12516 - Rev 2 Parameter Value Unit Rthj-case Thermal resistance junction-case 1 C/W Rthj-amb Thermal resistance junction-ambient 40 C/W page 2/13 SCT20N120AG Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 25 V Gate threshold voltage VDS = VGS, ID = 1 mA RDS(on) Static drain-source onresistance Typ. Max. 1200 10 VGS = 0 V, VDS = 1200 V, TJ = 200 C 50 100 2 Unit V VGS = 0 V, VDS = 1200 V IDSS VGS(th) Min. 3.5 VGS = 20 V, ID = 10 A 169 VGS = 20 V, ID = 10 A, TJ = 150 C 189 VGS = 20 V, ID = 10 A, TJ = 200 C 220 A nA V 239 m Table 4. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate input resistance VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 800 V, ID = 10 A, VGS = 0 to 20 V f=1 MHz, ID = 0 A Min. Typ. Max. Unit - 650 - pF - 65 - pF - 14 - pF - 45 - nC - 7 - nC - 11.7 - nC - 7 - Min. Typ. Max. Unit Table 5. Switching energy (inductive load) Symbol Eon DS12516 - Rev 2 Parameter Test conditions Turn-on switching energy VDD = 800 V, ID = 10 A - 160 - J Eoff Turn-off switching energy RG= 6.8 , VGS = -2 to 20 V - 90 - J Eon Turn-on switching energy VDD = 800 V, ID = 10 A - 165 - J Eoff Turn-off switching energy RG= 6.8 , VGS = -2 to 20 V, TJ= 150 C - 100 - J page 3/13 SCT20N120AG Electrical characteristics Table 6. Switching times Symbol td(on)V tf(V) td(off)V tr(V) Parameter Test conditions Turn-on delay time Fall time VDD = 800 V, ID = 10 A, RG = 0 , VGS = 0 to 20 V Turn-off delay time Rise time Min. Typ. Max. Unit - 10 - ns - 17 - ns - 27 - ns - 16 - ns Min. Typ. Max. Unit - 3.6 - V - 15 - ns - 75 - nC - 8 - A Table 7. Reverse SiC diode characteristics Symbol DS12516 - Rev 2 Parameter VSD Diode forward voltage trr Reverse recovery time Qrr Reverse recovery charge Irrm Peak reverse recovery current Test conditions IF = 5 A, VGS = -5 V ISD =10 A, VGS = -5 V, VR = 800 V, dif/dt = 1650 A/s page 4/13 SCT20N120AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Thermal impedance Figure 1. Safe operating area GIPD051020141115FSR ID (A) (o n) is 0.80 DS Op e Lim rati ite on i db nt y m his ax are a R 10 0.70 0.60 0.50 1 100s 1ms 0.1 GIPD051120141138FSR C/W Single pulse 10ms 0.40 0.30 0.20 Single pulse 0.10 0.01 0.1 1 10 100 Figure 3. Output characteristics @ TJ = 25 C GIPD311020141112FSR ID (A) 0 10-6 10-5 10-4 10-3 10-2 10-1 VDS(V) VGS= 20 V 18V 100 tp(s) Figure 4. Output characteristics @ TJ = 200 C GIPD311020141129FSR ID (A) VGS= 20 V 18V 40 40 30 30 16V 14V 16V 12V 20 20 14V 10 0 0 DS12516 - Rev 2 12V 10V 4 8 12 VDS(V) 10 10V 0 0 4 8 12 VDS(V) page 5/13 SCT20N120AG Electrical characteristics (curves) Figure 6. Body diode characteristics @ TJ = -50 C Figure 5. Transfer characteristics GIPD311020141137FSR ID (A) VDS(V) GIPD311020141159FSR -4 -5 -3 -2 -1 0 0 VGS = -5 V 20 -5 VDS = 12 V 15 VGS = -2 V TJ = 200 C -10 10 TJ = 25 C VGS = 0 V 5 0 0 4 8 GIPD311020141335FSR -5 -4 -3 (A) IDS 16 VGS(V) 12 Figure 7. Body diode characteristics @ TJ = 25 C VDS(V) -15 -2 -1 0 0 Figure 8. Body diode characteristics @ TJ = 150 C VDS(V) VGS = -5 V GIPD311020141338FSR -5 -4 -3 -2 VGS = -5 V -1 0 0 VGS = -2 V VGS = -2 V -5 -5 -10 -10 VGS = 0 V VGS = 0 V -15 -15 (A) IDS (A) IDS Figure 9. 3rd quadrant characteristics @ TJ = -50 C VDS(V) GIPD311020141343FSR -5 -4 -3 -2 -1 0 VGS = 0 V 1 0 VDS(V) GIPD311020141352FSR -5 -4 -3 -2 -1 0 0 VGS = 0 V -10 VGS = 5 V VGS = 10 V TJ = -50 C VGS = 20 V -10 VGS = 5 V -20 -20 VGS = 10 V -30 VGS = 15 V DS12516 - Rev 2 Figure 10. 3rd quadrant characteristics @ TJ = 25 C -30 VGS = 15 V -40 (A) ID TJ = 25 C VGS = 20 V -40 (A) ID page 6/13 SCT20N120AG Electrical characteristics (curves) Figure 11. 3rd quadrant characteristics @ TJ = 150 C GIPD311020141405FSR VDS(V) -4 -5 -3 -1 -2 0 0 Figure 12. Normalized VTH vs. temperature GIPD311020141411FSR VGS(th) (norm) VGS = 0 V ID = 1 mA -10 VGS = 5 V VGS = 10 V 1.2 1 -20 VGS = 15 V -30 TJ = 150 C VGS = 20 V -40 (A) ID 0.8 0.6 0.4 -50 Figure 13. Normalized RDS(on) vs. temperature GIPD051120141148FSR RDS(on) (norm) 0 50 100 150 Tj(C) Figure 14. Capacitances variation GIPD311020141419FSR C (pF) 1.15 VGS = 20 V 1000 1.10 Ciss 1.05 100 1 0.95 10 Coss Crss f = 1 MHz 0.90 0.85 25 DS12516 - Rev 2 50 75 100 125 150 175 Tj(C) 1 0.1 1 10 100 VDS(V) page 7/13 SCT20N120AG Test circuits 3 Test circuits Figure 15. Switching test waveforms for transition times Figure 16. Clamped inductive switching waveform t Off t On V DS t d (On) t d (Off) tf VDS On tr 90% 90% 10% VGS On V GS VGS Off GIPD101020141511FSR DS12516 - Rev 2 V DS Off 10% 90% 10% GIPD101020141502FSR page 8/13 SCT20N120AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 4.1 HiP247 package information Figure 17. HiP247TM package outline 8581091_2 DS12516 - Rev 2 page 9/13 SCT20N120AG HiP247 package information Table 8. HiP247TM package mechanical data Dim. DS12516 - Rev 2 mm Min. Typ. Max. A 4.85 5.00 5.15 A1 2.20 A2 1.90 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.85 20.00 20.15 E 15.45 15.60 15.75 E3 1.45 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 18.30 P 3.55 3.65 Q 5.65 5.95 S 5.30 2.60 2.00 2.10 1.65 5.45 18.50 5.50 5.60 18.70 5.70 page 10/13 SCT20N120AG Revision history Table 9. Document revision history DS12516 - Rev 2 Date Revision Changes 21-Mar-2018 1 First release 01-Mar-2019 2 Updated Table 3. On/off states. Updated package information. page 11/13 SCT20N120AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS12516 - Rev 2 page 12/13 SCT20N120AG IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2019 STMicroelectronics - All rights reserved DS12516 - Rev 2 page 13/13