HiP247™
123
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
Features
• AEC-Q101 qualified
• Very tight variation of on-resistance vs. temperature
• Very high operating temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
Applications
• Motor drives
• EV chargers
• High voltage DC-DC converters
• Switch mode power supplies
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per
unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material, combined with the device’s
housing in the proprietary HiP247™ package, allows designers to use an industry-
standard outline with significantly improved thermal capability. These features render
the device perfectly suitable for high-efficiency and high power density applications.
Product status link
SCT20N120AG
Product summary
Order code
SCT20N120AG
Marking
Package HiP247™
Packing Tube
Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ
(typ., TJ=150 °C), in an HiP247™ package
SCT20N120AG
Datasheet
DS12516 - Rev 2 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 1200 V
VGS Gate-source voltage -10 to 25 V
IDDrain current (continuous) at TC = 25 °C 20 A
IDDrain current (continuous) at TC = 100 °C 16 A
IDM (1) Drain current (pulsed) 45 A
PTOT Total power dissipation at TC = 25 °C 175 W
Tstg Storage temperature range
-55 to 200
°C
TjOperating junction temperature range °C
1. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 1 °C/W
Rthj-amb Thermal resistance junction-ambient 40 °C/W
SCT20N120AG
Electrical ratings
DS12516 - Rev 2 page 2/13
2Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage VGS = 0 V, ID = 1 mA 1200 V
IDSS Zero gate voltage drain
current
VGS = 0 V, VDS = 1200 V 10
µA
VGS = 0 V, VDS = 1200 V, TJ = 200 °C 50
IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 25 V 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA 2 3.5 V
RDS(on) Static drain-source on-
resistance
VGS = 20 V, ID = 10 A 169 239
mΩ
VGS = 20 V, ID = 10 A, TJ = 150 °C 189
VGS = 20 V, ID = 10 A, TJ = 200 °C 220
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 400 V, f = 1 MHz, VGS = 0 V
- 650 - pF
Coss Output capacitance - 65 - pF
Crss Reverse transfer capacitance - 14 - pF
QgTotal gate charge
VDD = 800 V, ID = 10 A,
VGS = 0 to 20 V
- 45 - nC
Qgs Gate-source charge - 7 - nC
Qgd Gate-drain charge - 11.7 - nC
RgGate input resistance f=1 MHz, ID = 0 A - 7 - Ω
Table 5. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon Turn-on switching energy VDD = 800 V, ID = 10 A
RG= 6.8 Ω, VGS = -2 to 20 V
- 160 - µJ
Eoff Turn-off switching energy - 90 - µJ
Eon Turn-on switching energy VDD = 800 V, ID = 10 A
RG= 6.8 Ω, VGS = -2 to 20 V,
TJ= 150 °C
- 165 - µJ
Eoff Turn-off switching energy - 100 - µJ
SCT20N120AG
Electrical characteristics
DS12516 - Rev 2 page 3/13
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)V Turn-on delay time
VDD = 800 V, ID = 10 A, RG = 0 Ω,
VGS = 0 to 20 V
- 10 - ns
tf(V) Fall time - 17 - ns
td(off)V Turn-off delay time - 27 - ns
tr(V) Rise time - 16 - ns
Table 7. Reverse SiC diode characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
VSD Diode forward voltage IF = 5 A, VGS = -5 V - 3.6 - V
trr Reverse recovery time
ISD =10 A, VGS = -5 V, VR = 800 V,
dif/dt = 1650 A/µs
- 15 - ns
Qrr Reverse recovery charge - 75 - nC
Irrm Peak reverse recovery
current - 8 - A
SCT20N120AG
Electrical characteristics
DS12516 - Rev 2 page 4/13
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
ID
1
0.1
0.1 1100 VDS(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
100µs
1ms
10ms
Single pulse
0.01
10
GIPD051020141115FSR
Figure 2. Thermal impedance
°C/W
0.20
10-6 tp(s)
0
0.10
0.30
0.40
0.50
0.60
0.70
0.80
10-5 10-4 10-3 10-2 10-1 100
Single pulse
GIPD051120141138FSR
Figure 3. Output characteristics @ TJ = 25 °C
ID
20
10
0VDS(V)
4
(A)
0
VGS= 20 V
18V
14V
10V
8
30
40
12
12V
16V
GIPD311020141112FSR
Figure 4. Output characteristics @ TJ = 200 °C
ID
20
10
0VDS(V)
4
(A)
0
VGS= 20 V
18V
14V
10V
8
30
40
12
12V
16V
GIPD311020141129FSR
SCT20N120AG
Electrical characteristics (curves)
DS12516 - Rev 2 page 5/13
Figure 5. Transfer characteristics
ID
10
5
0VGS(V)
4
(A)
0
VDS = 12 V
8
15
20
12 16
TJ = 200 °C
TJ = 25 °C
GIPD311020141137FSR
Figure 6. Body diode characteristics @ TJ = -50 °C
IDS
-5
0
VDS(V) -1
(A)
0
VGS = -5 V
-2
-10
-15
-3
-4
-5
VGS = 0 V
VGS = -2 V
GIPD311020141159FSR
Figure 7. Body diode characteristics @ TJ = 25 °C
IDS
-5
0
VDS(V) -1
(A)
0
VGS = -5 V
-2
-10
-15
-3
-4
-5
VGS = 0 V
VGS = -2 V
GIPD311020141335FSR
Figure 8. Body diode characteristics @ TJ = 150 °C
IDS
-5
0
VDS(V) -1
(A)
0
VGS = -5 V
-2
-10
-15
-3
-4
-5
VGS = 0 V
VGS = -2 V
GIPD311020141338FSR
Figure 9. 3rd quadrant characteristics @ TJ = -50 °C
ID
-20
1
VDS(V) 0
(A)
0
VGS = 5 V
-1
-30
-40
-2
-3
TJ = -50 °C
-4
VGS = 15 V
VGS = 0 V
-5
-10
VGS = 20 V
VGS = 10 V
GIPD311020141343FSR
Figure 10. 3rd quadrant characteristics @ TJ = 25 °C
ID
-20
VDS(V) 0
(A)
0
VGS = 5 V
-1
-30
-40
-2
-3
TJ = 25 °C
-4
VGS = 15 V
VGS = 0 V
-5
-10
VGS = 20 V
VGS = 10 V
GIPD311020141352FSR
SCT20N120AG
Electrical characteristics (curves)
DS12516 - Rev 2 page 6/13
Figure 11. 3rd quadrant characteristics @ TJ = 150 °C
ID
-20
VDS(V) 0
(A)
0
VGS = 5 V
-1
-30
-40
-2
-3
TJ = 150 °C
-4
VGS = 15 V
VGS = 0 V
-5
-10
VGS = 20 V
VGS = 10 V
GIPD311020141405FSR
Figure 12. Normalized VTH vs. temperature
VGS(th)
0.8
-50 0 50 Tj(°C)
(norm)
0.4 100
0.6
1
1.2
150
ID = 1 mA
GIPD311020141411FSR
Figure 13. Normalized RDS(on) vs. temperature
RDS(on)
0.95
25 50 100 Tj(°C)
75
(norm)
0.85 125
0.90
1
1.05
1.10
150 175
1.15
VGS = 20 V
GIPD051120141148FSR
Figure 14. Capacitances variation
C
10
1
0.1 1 100 VDS(V)10
(pF)
100
1000 Ciss
Coss
Crss
f = 1 MHz
GIPD311020141419FSR
SCT20N120AG
Electrical characteristics (curves)
DS12516 - Rev 2 page 7/13
3Test circuits
Figure 15. Switching test waveforms for transition times
GIPD101020141511FSR
Figure 16. Clamped inductive switching waveform
VDS
VDS On
td (Off) tr
tOff
90%
90%
tOn
td (On) tf
VGS
VGS Off
V
GS On
VDS Off
10%
10%
90%
10%
GIPD101020141502FSR
SCT20N120AG
Test circuits
DS12516 - Rev 2 page 8/13
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 HiP247 package information
Figure 17. HiP247™ package outline
8581091_2
SCT20N120AG
Package information
DS12516 - Rev 2 page 9/13
Table 8. HiP247™ package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.85 5.00 5.15
A1 2.20 2.60
A2 1.90 2.00 2.10
b 1.00 1.40
b1 2.00 2.40
b2 3.00 3.40
c 0.40 0.80
D 19.85 20.00 20.15
E 15.45 15.60 15.75
E3 1.45 1.65
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.30 18.50 18.70
P 3.55 3.65
Q 5.65 5.95
S 5.30 5.50 5.70
SCT20N120AG
HiP247 package information
DS12516 - Rev 2 page 10/13
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3Test circuits .......................................................................8
4Package information...............................................................9
4.1 HiP247 package information .....................................................9
Revision history .......................................................................11
SCT20N120AG
Contents
DS12516 - Rev 2 page 12/13
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
SCT20N120AG
DS12516 - Rev 2 page 13/13
