ee FAIRCHILD ee SEMICONDUCTOR m 2N5457 2N5458 2N5459 TO-92 Sp Discrete POWER & Signal Technologies MMBF5457 MMBF5458 MMBF5459 SOT-23 Ss Mark: 6D /61S /6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maxi mu m Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voe Drain-Gate Voltage 25 Vv Ves Gate-Source Voltage - 25 Vv ler Forward Gate Current 10 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N5457 *MMBF5457 Pp Total Device Dissipation 625 350 mW Derate above 25C 5.0 2.8 mWw/C Rac Thermal Resistance, Junction to Case 83.3 C/W Raa Thermal Resistance, Junction to Ambient 200 357 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 41997 Fairchild Semiconductor Corporation 6SVSAGWNW / 8SSPSAGWNW / ZSPSAGIWNIN / 6SUSNZ / 8SUSN2 / ZSVSN2Electrical Characteristics N-Channel General Purpose Amplifier (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min | Typ | Max |Units OFF CHARACTERISTICS Vieryass Gate-Source Breakdown Voltage Ig = 10 WA, Vos = 0 - 25 Vv less Gate Reverse Current Veg =-15 V, Vos = 0 - 1.0 nA Veg =-15 V, Vos = 0, Ta = 100C - 200 nA Vesior) Gate-Source Cutoff Voltage Vos = 15 V,Ip=10nA 2N5457 | - 0.5 - 6.0 Vv 2N5458 | - 1.0 -7.0 Vv 2N5459 | - 2.0 - 8.0 Vv Ves Gate-Source Voltage Vos =15V,lp=100uA 2N5457 -2.5 Vv Vos=15V,lp=200uA 2N5458 -3.5 Vv Vos = 15 V, Ip =400 uA 2N5459 745 Vv ON CHARACTERISTICS loss Zero-Gate Voltage Drain Current* Vps = 15 V, Veg = 0 2N5457 1.0 3.0 5.0 mA 2N5458 2.0 6.0 9.0 mA 2N5459 4.0 9.0 16 mA SMALL SIGNAL CHARACTERISTICS Gis Forward Transfer Conductance Vos = 15 V, Veg = 0, f = 1.0 KHz 2N5457 | 1000 5000 | umhos 2N5458 | 1500 5500 | umhos 2N5459 | 2000 6000 | umhos Jos Output Conductance Vos = 15 V, Veg = 0, f = 1.0 KHz 10 50 | umhos Ciss Input Capacitance Vos = 15 V, Veg = 0, f = 1.0 MHz 45 7.0 pF Criss Reverse Transfer Capacitance Vos = 15 V, Ves = 0, f = 1.0 MHz 1.5 3.0 pF NF Noise Figure Vos = 15 V, Veg = 0, f = 1.0 kHz, 3.0 dB Re = 1.0 megohm, BW = 1.0 Hz * Pulse Test: Pulse Width 300 ms, Duty Cycle 2% Typical Characteristics Ip DRAIN CURRENT (mA) Transfer Characteristics Vesiorry = 2.6V Ta 55C Ty = 28C LT, = 125C Vos = 15V Vestorr) = 1.8V Ta = -55C Ta = 25C "Ta = 125C 0 -1 -2 Ves GATE-SOURCE VOLTAGE (V) Vps = 15V Ip DRAIN CURRENT (mA) -3 0 -1 -2 Transfer Characteristics Vesiorr) = 3.7V Ta = 85C Ta = 28C Ta = 125C Vesiorr) = 1.9V Ta = 55C Ta =25C Ta = 126 C -3 -4 Vgs GATE-SOURCE VOLTAGE (V) -5 6SVSAGWNW / 8SSPSAGWNW / ZSPSAGIWNIN / 6SUSNZ / 8SUSN2 / ZSVSN2N-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) gs, TRANSCONDUCTANCE (mmhos) Ip DRAIN CURRENT (mA) Jos OUTPUT CONDUCTANCE (umbhes) 0.1 Transfer Characteristics Vaesiorr) = -1.9V Vos = 15V f yen a5 Ta = 25C AVA, Ty = 125C | I + Vesiorr) = 3- Ta =55C Ta =25C T, = 125C 1-2-3 Vos GATE-SOURCE VOLTAGE (v) Common Drain-Source TYP Vesiorr) =-1.BV Ta = 25C | | Ves =0V Ves = -0.25V Ves = -0.5V Ves = 0.75V Vos = -1V 1 2 3 4 5 Vps ORAIN-SQURCE VOLTAGE (Vv) Output Conductance vs. Drain Current Ta = 25C f=1kHz Vestorr) = 1.6V 1 10 Ip DRAIN CURRENT (mA) Transfer Characteristics 8 Vv =15V Vastorrt = 2.6V 2 e ' Ty = 55C 3 Ta =25C So Ip, = 125C i _ a ] 2 4 Vosiorn = oe o ae 3 oA Ta 225C = ? Ta - -55C x I & 0 -1 -2 -3 Ves GATE-SOURCE VOLTAGE (V) Parameter Interaction Ute, Ipss @ Vos = 15V, Vas = OV Tas @ Ip = 0.5 mA, Vos av Vesiorr) Vps = 15V, Ip = 1 nA 100 10 Ipss 10 die TRANSCONDUCTANCE (mmhos) Inss DRAIN SATURATION CURRENT (mA) (24) 3INVLSISIY.NONIVHO ~ $9 1 0.1 -l -2 5 -10 Vasiorr) GATE CUTOFF VOLTAGE (V) Transconductance vs. Drain Current Vos = 15V Ta = 25C f=1 kHz )=1.5V gts TRANSCONDUCTANCE (mmhos} 0.01 0.1 1 10 Ip DRAIN CURRENT (mA) 6SVSAGWNW / 8SSPSAGWNW / ZSPSAGIWNIN / 6SUSNZ / 8SUSN2 / ZSVSN2N-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) tog DRAIN ON RESISTANCE (<2) Ig, less GATE LEAKAGE CURRENT (pA} 10k 1k Channel Resistance vs. Temperature Vps = 100 mV Ves =0V 25 25 75 125175 T, AMBIENT TEMPERATURE (C) Leakage Current vs. Voltage 0 =0.1 Ta = 125C Ta = 85C loss Ty = 25C ip = 0.1 mA Ip=1 0 10 20 30 40 50 Voc ORAIN-GATE VOLTAGE (V)} Noise Voltage vs. Frequency 100 Taz 25C = Vps = 15V > = wl go e 2 10 > a Ip = 100 uA 5 2 | & 1 0.01 0.1 1 10 100 f FREQUENCY (kHz) Capacitance vs. Voltage 10 f=1MHz z = ao 2 = Ciss (Vpg = 15V) o =x a x oOo | 8 Crss (Vos = Ov) *) a oO Cis (Vp = 15V) 0 ~2 -4 -6 -8 -10 Vas GATE-SOURCE VOLTAGE (V) 6SVSAGWNW / 8SSPSAGWNW / ZSPSAGIWNIN / 6SUSNZ / 8SUSN2 / ZSVSN2