Small Signal Product CREAT BY ART
- High voltage switching device
- Ideal for automated placement
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion
resistant and leads are readily solderable
- RoHS compliant
- Polarity: Indicated by black cathode band
SYMBOL UNIT
P
D
mW
V
RRM
V
I
F(AV)
mA
T
J
, T
STG o
C
Electrical Characteristics SYMBOL UNIT
V
F
V
R
θJA o
C/W
C
J
pF
t
rr
ns
Document Number: DS_S1501002 Version: B15
BAV100 V
R
= 50 V
I
F
= 100 mA
(Note)
V
R
= 0 , f = 1.0 MHz
I
R
Thermal Resistance, Junction to Ambient
Average Rectified Forward Current
Repetitive Peak Reverse Voltage
Power Dissipation
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
BAV103 I
R
= 100 μA
BAV102 I
R
= 100 μA
BAV101 I
R
= 100 μA
BAV100 I
R
= 100 μA
Breakdown Voltage
Reverse Recovery Time - 50
Notes : Reverse recovery test conditions : I
F
= I
R
= 30 mA , I
rr
= 30 mA , R
L
= 100 Ω
I
FSM
PARAMETER
Operating and Storage Temperature Range
B
V
BAV103 V
R
= 200 V
Peak Reverse Current
Junction Capacitance -5.0
350
-
100
nA
100
100
100
BAV102 V
R
= 150 V
BAV101 V
R
= 100 V
V
120
200
250
Forward Voltage -1.0
MIN MAX
60
-
Non-Repetitive Peak Forward
Surge Current A
4.0
-65 to +200
500
250
200
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER VALUE
1.0
BAV100/101/102/103
Taiwan Semiconductor
Hermeticall
Sealed Glass Hi
h Volta
e Switchin
Diodes
FEATURES
MINI MELF
MECHANICAL DATA