MOSFET - N-Channel, SUPERFET II, FRFET 650 V, 54 A, 77 mW FCH077N65F Description SUPERFET(R) II MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET(R) MOSFET's optimized body diode reverse recovery performance can remove additional component and improve system reliability. www.onsemi.com VDS RDS(ON) MAX ID MAX 650 V 77 mW @ 10 V 54 A D Features * * * * * * G 700 V @ TJ = 150C Typ. RDS(on)) = 68 mW Ultra Low Gate Charge (Typ. Qg = 126 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 693 pF) 100% Avalanche Tested This Device is Pb-Free and is RoHS Compliant S N-CHANNEL MOSFET S D G Applications * * * * LCD, LED, PDP TV Solar Inverter Telecom, Server Power Supplies AC-DC Power Supply TO-247-3LD CASE 340CH MARKING DIAGRAM $Y&Z&3&K FCH 077N65F $Y &Z &3 &K FCH077N65F = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2014 October, 2020 - Rev. 4 1 Publication Order Number: FCH077N65F/D FCH077N65F ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR dv/dt PD TJ, TSTG TL Unit 650 V 20 V -DC -AC ID FCH077N65F-F155 (f > 1 Hz) 30 -Continuous (TC = 25C) 54 -Continuous (TC = 100C) 32 -Pulsed (Note 1) A 162 A 1128 mJ 11 A Repetitive Avalanche Energy (Note 1) 4.81 mJ MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 Power Dissipation (TC = 25C) 481 W -Derate Above 25C 3.85 W/C -55 to + 150 C 300 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. IAS = 11 A, RG = 25 W, Starting TJ = 25C 3. ISD 27 A, di/dt 200 A/ms, VDD 380 V, Starting TJ = 25 C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. FCH077N65F-F155 Unit 0.26 C/W 40 FCH077N65F-F155 C/W RqJC 0.26 RqJA 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCH077N65F-F155 FCH077N65F TO-247-3LD Tube N/A N/A 30 Units www.onsemi.com 2 FCH077N65F ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25C 650 - - V VGS = 0 V, ID = 10 mA, TJ = 150C 700 - - 0.72 - V/C mA OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/ DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25C - IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V - - 10 VDS = 520 V, VGS = 0 V, TC = 125C - 144 - VGS = 20 V, VDS = 0 V - - 100 nA IGSS Gate to Body Leakage Current ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5.4 mA 3 - 5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 27 A - 68 77 mW Forward Transconductance VDS = 20 V, ID = 27 A - 42 - S VDS = 100 V, VGS = 0 V, f = 1 MHz - 5345 7109 pF - 165 220 pF - 0.8 - pF - pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 97 Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 693 - pF Total Gate Charge at 10 V VDD = 380 V, ID = 27 A, VGS = 10 V (Note 4) - 126 164 nC - 28 - nC - 53 - nC f = 1 MHz - 0.7 - W VDD = 380 V, ID = 27 A, VGS = 10 V, RG = 4.7 W (Note 4) - 40 90 ns - 35 80 ns Coss(eff.) Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller"Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time - 113 236 ns Turn-Off Fall Time - 5 20 ns Maximum Continuous Drain to Source Diode Forward Current - - 54 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 162 A VSD tf DRAIN-SOURCE DIODE CHARACTERISTICS IS Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 27 A - - 1.2 V trr Reverse Recovery Time - 163 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 27 A, dIF/dt = 100 A/ms - 0.9 - mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. www.onsemi.com 3 FCH077N65F TYPICAL PERFORMANCE CHARACTERISTICS 200 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 10 1 *Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 100 ID, Drain Current (A) ID, Drain Current (A) 1000 150C 10 -55C *Notes: 1. 250 ms Pulse Test 2. TC = 25C 0.1 10 1 25C 1 20 3 VDS, Drain-Source Voltage (V) IS, Reverse Drain Current (A) RDS(ON), Drain-Source On-Resistance (W) 1000 *Note: TC = 25C 0.10 VGS = 10 V 0.08 VGS = 20 V 0 32 64 96 128 100 10 150C 1 25C 0.1 0.01 0.001 0.0 160 10 1 VGS, Gate-Source Voltage (V) Capacitance (pF) 10000 Ciss 10 Coss Ciss = Cgs + Cgd (Cds = Shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 0.8 1.2 1.6 2.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 *Note: 1. VGS = 0 V 2. f = 1 MHz 0.4 VSD, Body Diode Forward Voltage (V) Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 8 *Notes: 1. VGS = 0 V 2. 250 ms Pulse Test ID, Drain Current (A) 1000 7 Figure 2. Transfer Characteristics 0.12 0.06 6 VGS, Gate-Source Voltage (V) Figure 1. On-Region Characteristics 0.14 5 4 Crss 100 8 VDS, Drain-Source Voltage (V) VDS = 130 V VDS = 325 V 6 VDS = 520 V 4 2 0 700 *Note: ID = 27 A 0 26 52 78 104 Qg, Total Gate Charge (nC) 130 Figure 6. Gate Charge Characteristics Figure 5. Capacitance Characteristics www.onsemi.com 4 FCH077N65F TYPICAL PREFORMANCE CHARACTERISTICS (continued) 2.5 *Notes: 1. VGS = 0 V 2. ID = 10 mA 1.1 RDS(on), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 0.9 0.8 -100 -50 0 50 100 150 2.0 *Notes: 1. VGS = 10V 2. ID = 27A 1.5 1.0 0.5 -100 200 TJ, Junction Temperature (C) 150 200 10 ms ID, Drain Current (A) ID, Drain Current (A) 100 Figure 8. On-Resistance Variation vs. Temperature 100 ms 10 1 ms Operation in This Area is Limited by RDS(on) DC *Notes: 1. TC = 25C 2. TJ = 150C 3. Single Pulse 1 1 10 100 24 18 12 6 260 24 390 520 25 50 75 100 125 TC, Case Temperature (C) Figure 10. Maximum Drain Current vs. Case Temperature 30 130 36 0 1000 VDS, Drain-Source Voltage (V) 0 48 12 Figure 9. Maximum Safe Operating Area EOSS (mJ) 50 60 200 100 0 0 TJ, Junction Temperature (C) Figure 7. Breakdown Voltage Variation vs. Temperature 0.1 -50 650 VDS, Drain to Source Voltage (V) Figure 11. EOSS vs. Drain to Source Voltage www.onsemi.com 5 150 FCH077N65F ZqJC(t), Thermal Response (C/W) TYPICAL PERFORMANCE CHARACTERISTICS (continued) 1 0.1 0.5 0.2 PDM 0.1 0.05 0.01 0.02 0.01 Single Pulse 0.001 10-5 10-4 t1 t2 *Notes: 1. ZqJC(t) = 0.26C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZqJC(t) 10-3 10-2 10-1 t1, Rectangular Pulse Duration (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 1 FCH077N65F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Transient Thermal Response Curve RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCH077N65F + DUT VDS - ISD L Driver RG Same Type as DUT VGS - dv/dt controlled by RG - ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD CASE 340CH ISSUE A DATE 09 OCT 2019 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG XXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13853G TO-247-3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. 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