FCH077N65F_F155 - ON SEMICONDUCTOR

October, 2020 − Rev. 4

1Publication Order Number:

FCH077N65F/D

MOSFET – N-Channel,

SUPERFET II, FRFET

650 V, 54 A, 77 mW

FCH077N65F

Description

SUPERFET® II MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This technology is tailored to minimize

conduction loss, provide superior switching performance, dv/dt rate

and higher avalanche energy. Consequently, SUPERFET II MOSFET

is very suitable for the switching power applications such as PFC,

server/telecom power, FPD TV power, ATX power and industrial

power applications. SUPERFET II FRFET® MOSFET’s optimized

body diode reverse recovery performance can remove additional

component and improve system reliability.

Features

•700 V @ TJ = 150°C

•Typ. RDS(on)) = 68 mW

•Ultra Low Gate Charge (Typ. Qg = 126 nC)

•Low Effective Output Capacitance (Typ. Coss(eff.) = 693 pF)

•100% Avalanche Tested

•This Device is Pb−Free and is RoHS Compliant

Applications

•LCD, LED, PDP TV

•Solar Inverter

•Telecom, Server Power Supplies

•AC−DC Power Supply

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See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

N-CHANNEL MOSFET

MARKING DIAGRAM

VDS RDS(ON) MAX ID MAX

650 V 77 mW @ 10 V 54 A

TO−247−3LD

CASE 340CH

$Y = ON Semiconductor Logo

&Z = Assembly Plant Code

&3 = Numeric Date Code

&K = Lot Code

FCH077N65F = Specific Device Code

$Y&Z&3&K

FCH

077N65F

FCH077N65F

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ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Symbol Parameter FCH077N65F−F155 Unit

VDSS Drain to Source Voltage 650 V

VGSS Gate to Source Voltage −DC ±20 V

−AC (f > 1 Hz) ±30

IDDrain Current −Continuous (TC = 25°C) 54 A

−Continuous (TC = 100°C) 32

IDM Drain Current −Pulsed (Note 1) 162 A

EAS Single Pulsed Avalanche Energy (Note 2) 1128 mJ

IAR Avalanche Current (Note 1) 11 A

EAR Repetitive Avalanche Energy (Note 1) 4.81 mJ

dv/dt MOSFET dv/dt 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 50

PDPower Dissipation (TC = 25°C) 481 W

−Derate Above 25°C 3.85 W/°C

TJ, TSTG Operating and Storage Temperature Range −55 to + 150 °C

TLMaximum Lead Temperature for Soldering, ⅛ from Case for 5 Seconds 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. IAS = 11 A, RG = 25 W, Starting TJ = 25°C

3. ISD ≤ 27 A, di/dt ≤ 200 A/ms, VDD ≤380 V, Starting TJ = 25 °C.

THERMAL CHARACTERISTICS

Symbol Parameter FCH077N65F−F155 Unit

RqJC Thermal Resistance, Junction to Case, Max. 0.26 °C/W

RqJA Thermal Resistance, Junction to Ambient, Max. 40

符

号参数 FCH077N65F−F155

单

位

RqJC 结至外壳热阻最大值 0.26 °C/W

RqJA 结至环

境

热阻最大值 40

PACKAGE MARKING AND ORDERING INFORMATION

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FCH077N65F−F155 FCH077N65F TO−247−3LD Tube N/A N/A 30 Units

FCH077N65F

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Condition Min. Typ. Max. Unit

OFF CHARACTERISTICS

BVDSS Drain to Source Breakdown Voltage VGS = 0 V, ID = 10 mA, TJ = 25°C 650 − − V

VGS = 0 V, ID = 10 mA, TJ = 150°C 700 − −

DBVDSS/

DTJ

Breakdown Voltage Temperature

Coefficient

ID = 10 mA, Referenced to 25°C−0.72 −V/°C

IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA

VDS = 520 V, VGS = 0 V, TC = 125°C−144 −

IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V − − ±100 nA

ON CHARACTERISTICS

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5.4 mA 3−5 V

RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 27 A −68 77 mW

gFS Forward Transconductance VDS = 20 V, ID = 27 A −42 −S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 100 V, VGS = 0 V,

f = 1 MHz

−5345 7109 pF

Coss Output Capacitance −165 220 pF

Crss Reverse Transfer Capacitance −0.8 −pF

Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz −97 −pF

Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V −693 −pF

Qg(tot) Total Gate Charge at 10 V VDD = 380 V, ID = 27 A,

VGS = 10 V

(Note 4)

−126 164 nC

Qgs Gate to Source Gate Charge −28 −nC

Qgd Gate to Drain “Miller”Charge −53 −nC

ESR Equivalent Series Resistance f = 1 MHz −0.7 −W

SWITCHING CHARACTERISTICS

td(on) Turn-On Delay Time VDD = 380 V, ID = 27 A,

VGS = 10 V, RG = 4.7 W

(Note 4)

−40 90 ns

trTurn-On Rise Time −35 80 ns

td(off) Turn-Off Delay Time −113 236 ns

tfTurn-Off Fall Time −5 20 ns

DRAIN-SOURCE DIODE CHARACTERISTICS

ISMaximum Continuous Drain to Source Diode Forward Current − − 54 A

ISM Maximum Pulsed Drain to Source Diode Forward Current − − 162 A

VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 27 A − − 1.2 V

trr Reverse Recovery Time VGS = 0 V, ISD = 27 A,

dIF/dt = 100 A/ms

−163 −ns

Qrr Reverse Recovery Charge −0.9 −mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature.

FCH077N65F

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On−Resistance Variation vs. Drain

Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation

vs. Source Current and Temperature

VDS, Drain−Source Voltage (V)

ID, Drain Current (A)

100

200

34 5678

VGS, Gate−Source Voltage (V)

ID, Drain Current (A)

RDS(ON), Drain−Source On−Resistance (W)

2.0

VSD, Body Diode Forward Voltage (V)

IS, Reverse Drain Current (A)

Figure 5. Capacitance Characteristics

VDS, Drain−Source Voltage (V)

Capacitance (pF)

Qg, Total Gate Charge (nC)

VGS, Gate−Source Voltage (V)

Figure 6. Gate Charge Characteristics

100

1000 VGS = 10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

*Notes:

1. 250 ms Pulse Test

2. TC = 25°C

0.1 1 10 20

*Notes:

1. VDS = 20 V

2. 250 ms Pulse Test

150°C

25°C

−55°C

*Note: TC = 25°C

VGS = 10 V

VGS = 20 V

0.06

0.08

0.10

0.12

0.14

0 32 64 96 128 160 1.61.20.80.40.0

0.001

0.01

0.1

100

1000 *Notes:

1. VGS = 0 V

2. 250 ms Pulse Test

150°C

25°C

0.1

100

1000

10000

100000

0.1 1 10 100 700

Ciss = Cgs + Cgd (Cds = Shorted)

Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0 V

2. f = 1 MHz

Ciss

Coss

Crss

*Note: ID = 27 A VDS = 130 V

VDS = 325 V

VDS = 520 V

0 26 52 78 104 130

FCH077N65F

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TYPICAL PREFORMANCE CHARACTERISTICS (continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On−Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. EOSS vs. Drain to Source Voltage

TJ, Junction Temperature (°C)

BVDSS, (Normalized)

Drain−Source Breakdown Voltage

TJ, Junction Temperature (°C)

RDS(on), (Normalized)

Drain−Source On−Resistance

VDS, Drain−Source Voltage (V)

ID, Drain Current (A)

TC, Case Temperature (°C)

ID, Drain Current (A)

VDS, Drain to Source Voltage (V)

EOSS (mJ)

0.8

0.9

1.0

1.1

1.2 *Notes:

1. VGS = 0 V

2. ID = 10 mA

−100 −50 0 50 100 150 200 0.5

1.0

1.5

2.0

2.5

−100 −50 0 50 100 150 200

*Notes:

1. VGS = 10V

2. ID = 27A

0.1

100

200

Operation in This Area

is Limited by RDS(on)

*Notes:

1. TC = 25°C

2. TJ = 150°C

3. Single Pulse

1 ms

100 ms

10 ms

1 10 100 1000 0

25 50 75 100 125 150

0 130 260 390 520 650

FCH077N65F

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TYPICAL PERFORMANCE CHARACTERISTICS (continued)

Figure 12. Transient Thermal Response Curve

0.001

0.01

0.1

10−510−410−310−210−11

t1, Rectangular Pulse Duration (sec)

ZqJC(t), Thermal Response (°C/W)

0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

PDM

t1t2

*Notes:

1. ZqJC(t) = 0.26°C/W Max.

2. Duty Factor, D = t1/t2

3. TJM − TC = PDM * ZqJC(t)

FCH077N65F

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Figure 13. Transient Thermal Response Curve

Qgd

Qgs

VGS

VDS

VGS

DUT

IG = Const.

Charge

Figure 14. Resistive Switching Test Circuit & Waveforms

Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms

VDS

VGS

DUT

VDD

VDS

VGS

10%

90%

10%

90% 90%

ton toff

trtf

td(on) td(off)

VDD

VDS

DUT

VGS

VDD

Time

IAS

BVDSS

ID(t)

VDS(t)

EAS +1

@LIAS

FCH077N65F

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Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDD

ISD

VDS

−

VGS

Same Type

as DUT

− dv/dt controlled by RG

− ISD controlled by pulse period

Driver

VGS

(Driver)

ISD

(DUT)

VDS

(DUT) VSD

IRM

10 V

di/dt

VDD

IFM, Body Diode Forward Current

Body Diode Reverse Current

Body Diode Recovery dv/dt

Body Diode

Forward Voltage Drop

D+

Gate Pulse Width

Gate Pulse Period

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or

other countries.

FRFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other

countries.

TO−247−3LD

CASE 340CH

ISSUE A

DATE 09 OCT 2019

XXXX = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

GENERIC

MARKING DIAGRAM*

XXXXXXXXX

AYWWG

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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DOCUMENT NUMBER:

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