Order this document by MRF1000MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for Class A and AB common emitter amplifier applications in the low-power stages of IFF, DME, TACAN, radar transmitters, and CW systems. * Guaranteed Performance @ 1090 MHz, 18 Vdc -- Class A Output Power = 0.2 Watt Minimum Gain = 10 dB 0.7 W, 960 - 1215 MHz CLASS A/AB MICROWAVE POWER TRANSISTORS NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Industry Standard Package * Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input Matching for Broadband Operation * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 20 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage CASE 332A-03, STYLE 2 VEBO 3.5 Vdc Collector Current -- Continuous IC 200 mAdc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 7.0 40 Watts mW/C Storage Temperature Range Tstg - 65 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC 25 C/W Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 -- -- Vdc Collector-Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 0.5 mAdc hFE 10 -- 100 -- OFF CHARACTERISTICS Collector Cutoff Current (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Replaces MRF1000MA/D) RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF1000MB 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob -- 2.0 5.0 pF Common-Emitter Power Gain -- Class A (VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW) GPE 10 12 -- dB Common-Emitter Power Gain -- Class AB (VCE = 18 Vdc, ICQ = 10 mAdc, f = 1090 MHz, Pout = 0.7 W) GPE -- 10.7 -- dB DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Load Mismatch -- Class A (VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW, VSWR = 10:1 All Phase Angles) No Degradation in Power Output C C1, C2, C3, C7, C8, C10 -- 220 pF ATC 100 mil C4, C9 -- 4.7 F 50 V Tantalum C5, C6 -- 0.8 - 8.0 pF Johanson #7290 BASE BIAS INPUT Z1-Z10 -- Distributed Microstrip Elements Z1-Z10 -- See Figure 8 C2 C3 B C7 Z6 Z2 Z7 C10 Z5 C1 Z1 DUT Z8 C6 Class AB Bias Control Circuit 18 V Output ICQ 10 mA Nominal 10 1/2 W 0.1 F 50 V 0.1 F 50 V RF OUTPUT Z10 C5 330 1/2 W Z9 Z3 Z4 10 F 50 V C9 C4 Board Material -- 0.031 Thick Teflon-Fiberglass Board Material -- r = 2.56 RF INPUT C8 COLLECTOR BIAS INPUT Class A Constant Current Bias Control Circuit IC = 100 mA, VCE = 18 V +18 V INPUT +18 V COLLECTOR BIAS OUTPUT TO POINT C C1 10 F 50 V C2 0.1 F 50 V 0.1 F 50 V R4 2.2 k C3 1/2 W 0.1 F 50 V R2 11 k 1/2 W 100 2W Q1 2N3906 R3 BASE BIAS OUTPUT TO POINT B R5 18 k 1/2 W C4 R1 1k 1/2 W + 28 V INPUT +18 V COLLECTOR BIAS OUTPUT TO POINT C BASE BIAS OUTPUT TO POINT B Figure 1. 1090 MHz Test Circuit MRF1000MB 2 MOTOROLA RF DEVICE DATA 1 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 1 0.8 CLASS AB ICQ = 10 mA VCE = 18 V 0.6 CLASS A IC = 100 mA VCE = 18 V 0.4 0.2 0.8 CLASS A Pin = 60 mW ICQ = 10 mA VCE = 18 V 0.6 0.4 CLASS A Pin = 20 mW IC = 100 mA VCE = 18 V 0.2 f = 1090 MHz 0 0 20 40 60 Pin, INPUT POWER (mW) 80 0 100 960 Figure 2. Output Power versus Input Power 1215 Figure 3. Output Power versus Frequency 1 14 0.5 G PE , POWER GAIN (dB) IC, COLLECTOR CURRENT (AMP) 1090 f, FREQUENCY (MHz) 0.2 0.1 CLASS A BIAS POINT 0.05 CLASS A Pout = 200 mW IC = 100 mA VCE = 18 V 13 12 CLASS AB Pout = 500 mW ICQ = 10 mA VCE = 18 V 11 0.02 0.01 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1 100 10 960 Figure 4. DC Safe Operating Area 1090 f, FREQUENCY (MHz) Figure 5. Power Gain versus Frequency SERIES EQUIVALENT IMPEDANCES Pout = 0.5 W, VCE = 18 Vdc, ICQ = 10 mAdc, Class AB + j50 + j25 + j10 Zin 1215 1090 960 1250 S11 1100 950 0 10 + j100 + j150 + j250 + j500 25 50 100 150 1215 f MHz Zin Ohms ZOL* Ohms 960 1090 1215 3.0 + j9.0 3.2 + j10 2.8 + j12 16 - j40 8.5 - j31 7.0 - j26 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage, and frequency. 250 500 - j500 S22 950 - j10 ZOL* 1215 1090 1100 1250 960 - j150 - j100 - j25 - j50 COORDINATES IN OHMS S-PARAMETERS -- VCE = 18 Vdc, IC = 100 mAdc, Class A - j250 f (MHz) 950 1000 1050 1100 1150 1200 1250 S11 |S11| 0.77 0.78 0.77 0.77 0.78 0.78 0.78 S21 166 165 163 162 161 159 158 |S21| 2.42 2.36 2.31 2.31 2.20 2.20 2.12 S12 40 38 33 28 23 19 12 |S12| 0.016 0.016 0.016 0.016 0.015 0.016 0.016 S22 42 48 46 46 46 47 42 |S22| 0.48 0.50 0.51 0.54 0.57 0.59 0.61 - 87 - 90 - 94 - 97 - 100 - 103 - 106 Figure 6. Common-Emitter S-Parameters and Series Equivalent Input/Output Impedances MOTOROLA RF DEVICE DATA MRF1000MB 3 PACKAGE DIMENSIONS F 4 1 K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D 3 2 A H STYLE 2: PIN 1. 2. 3. 4. J EMITTER BASE EMITTER COLLECTOR C SEATING PLANE DIM A C D F H J K INCHES MIN MAX 0.270 0.290 0.115 0.135 0.195 0.205 0.095 0.105 0.050 0.070 0.003 0.007 0.600 --- MILLIMETERS MIN MAX 6.86 7.36 2.93 3.42 4.96 5.20 2.42 2.66 1.27 1.77 0.08 0.17 15.24 --- CASE 332A-03 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 Mfax: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps MRF1000MB 4 MRF1000MB/D MOTOROLA RF DEVICE DATA