1
MRF1000MBMOTOROLA RF DEVICE DATA
The RF Line
 
 
Designed for Class A and AB common emitter amplifier applications in the
low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A
Output Power = 0.2 Watt
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 50 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Continuous IC200 mAdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD7.0
40 Watts
mW/°C
Storage Temperature Range Tstg 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0) ICBO 0.5 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10 100
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF1000MB/D

SEMICONDUCTOR TECHNICAL DATA

0.7 W, 9601215 MHz
CLASS A/AB
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332A–03, STYLE 2
Motorola, Inc. 1997
(Replaces MRF1000MA/D)
MRF1000MB
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob 2.0 5.0 pF
FUNCTIONAL TESTS
Common–Emitter Power Gain — Class A
(VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW) GPE 10 12 dB
Common–Emitter Power Gain — Class AB
(VCE = 18 Vdc, ICQ = 10 mAdc, f = 1090 MHz, Pout = 0.7 W) GPE 10.7 dB
Load Mismatch — Class A
(VCE = 18 Vdc, IC = 100 mAdc, f = 1090 MHz, Pout = 200 mW,
VSWR = 10:1 All Phase Angles)
ψNo Degradation in Power Output
Figure 1. 1090 MHz Test Circuit
C1, C2, C3, C7, C8, C10 — 220 pF ATC 100 mil
C4, C9 — 4.7 µF 50 V Tantalum
C5, C6 — 0.88.0 pF Johanson #7290
Z1–Z10 — Distributed Microstrip Elements
Z1–Z10 — See Figure 8
Board Material — 0.031 Thick Teflon–Fiberglass
Board Material — εr = 2.56
Class AB Bias Control Circuit
18 V Output ICQ 10 mA Nominal Class A Constant Current Bias Control Circuit
IC = 100 mA, VCE = 18 V
BASE BIAS INPUT B
RF
INPUT
RF
OUTPUT
C1 Z10
CCOLLECT OR BIAS INPUT
Z1 Z5
C5
DUT
C6
Z8
C10
Z9
Z7Z6
Z3Z2
C2 C3 C4
C7 C8 C9
330
1/2 W
10
1/2 W
10
µ
F
50 V
0.1
µ
F
50 V
0.1
µ
F
50 V
+18 V INPUT
+18 V COLLECTOR BIAS
OUTPUT TO POINT C
BASE BIAS OUTPUT
TO POINT B
R2
11 k
1/2 W
R5
18 k
1/2 W
100
2 W 10
µ
F
50 V
0.1
µ
F
50 V
1 k
1/2 W
2.2 k
1/2 W 0.1
µ
F
50 V
0.1
µ
F
50 V
2N3906 Q1
+28 V INPUT
+18 V COLLECTOR BIAS
OUTPUT TO POINT C
BASE BIAS OUTPUT
TO POINT B
Z4
C4
R1 C1
C2
C3
R4
R3
3
MRF1000MBMOTOROLA RF DEVICE DATA
fS11 S21 S12 S22
f
(MHz) |S11|φ|S21|φ|S12|φ|S22|φ
950
1000
1050
1100
1150
1200
1250
0.77
0.78
0.77
0.77
0.78
0.78
0.78
166
165
163
162
161
159
158
2.42
2.36
2.31
2.31
2.20
2.20
2.12
40
38
33
28
23
19
12
0.016
0.016
0.016
0.016
0.015
0.016
0.016
42
48
46
46
46
47
42
0.48
0.50
0.51
0.54
0.57
0.59
0.61
–87
–90
–94
–97
100
103
106
Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency
Figure 4. DC Safe Operating Area Figure 5. Power Gain versus Frequency
Figure 6. Common–Emitter S–Parameters and Series Equivalent Input/Output Impedances
S–PARAMETERS — VCE = 18 Vdc, IC = 100 mAdc, Class A
f
MHz Zin
Ohms ZOL*
Ohms
960
1090
1215
3.0 + j9.0
3.2 + j10
2.8 + j12
16 – j40
8.5 – j31
7.0 – j26
SERIES EQUIVALENT IMPEDANCES
Pout = 0.5 W, VCE = 18 Vdc,
ICQ = 10 mAdc, Class AB
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage, and frequency.
P , OUTPUT POWER (WATTS)
out
0.8
1
0.6
0.4
0.2
0100806040200 Pin, INPUT POWER (mW)
f = 1090 MHz
CLASS A
IC = 100 mA
VCE = 18 V
CLASS AB
ICQ = 10 mA
VCE = 18 V
P , OUTPUT POWER (WATTS)
out
0.8
1
0.6
0.4
0.2
0960 f, FREQUENCY (MHz)
1090 1215
CLASS A
Pin = 20 mW
IC = 100 mA
VCE = 18 V
IC, COLLECTOR CURRENT (AMP)
1
1VCE, COLLECTOR–EMITTER VOLT AGE (VOLTS)
0.5
0.2
0.1
0.05
0.02
0.01 2 5 10 20 50 100
CLASS A BIAS POINT
GPE, POWER GAIN (dB)
14
960 f, FREQUENCY (MHz)
1090 1215
13
12
11
10
CLASS A
Pout = 200 mW
IC = 100 mA
VCE = 18 V
CLASS AB
Pout = 500 mW
ICQ = 10 mA
VCE = 18 V
25 50 150 250 50010
+j50
+j100
+j150
+j250
+j500
j500
j250
j150
j100
j50
j25
j10
0
+j10
+j25
Zin
1215
100
960 1090
1250
1100
950
S11
950
S22
1100
1250
960
1090
1215 ZOL*
COORDINATES IN OHMS
CLASS A
Pin = 60 mW
ICQ = 10 mA
VCE = 18 V
MRF1000MB
4MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 332A–03
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
K
F
D
SEATING
1
4
3
2
PLANE
HAJ
C
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.270 0.290 6.86 7.36
C0.115 0.135 2.93 3.42
D0.195 0.205 4.96 5.20
F0.095 0.105 2.42 2.66
H0.050 0.070 1.27 1.77
J0.003 0.007 0.08 0.17
K0.600 ––– 15.24 –––
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Mfax is a trademark of Motorola, Inc.
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MRF1000MB/D