Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0 1Publication Order Number:
NTD20N03L27/D
NTD20N03L27
Power MOSFET
20 Amps, 30 Volts
N–Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain–to–source diode has a ideal fast but soft recovery.
Features
•Ultra–Low RDS(on), single base, advanced technology
•SPICE parameters available
•Diode is characterized for use in bridge circuits
•IDSS and VDS(on) specified at elevated temperatures
•High Avalanche Energy Specified
•ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
Typical Applications
•Power Supplies
•Inductive Loads
•PWM Motor Controls
•Replaces MTD20N03L in many applications
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain–to–Source Voltage VDSS 30 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 30 Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp10 ms) VGS
VGS
20
24
Vdc
Drain Current
– Continuous @ TA = 25C
– Continuous @ TA = 100C
– Single Pulse (tp10 µs)
ID
ID
IDM
20
16
60
Adc
Apk
Total Power Dissipation @ TA = 25C
Derate above 25°C
Total Power Dissipation @ TC = 25°C
(Note 1.)
PD74
0.6
1.75
Watts
W/°C
W
Operating and Storage Temperature
Range TJ, Tstg –55 to
150 °C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5 Vdc, L =
1.0 mH, IL(pk) = 24 A, VDS = 34 Vdc)
EAS 288 mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
RθJC
RθJA
RθJA
1.67
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds TL260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
20 AMPERES
30 VOLTS
RDS(on) = 27 mΩ
Device Package Shipping
ORDERING INFORMATION
NTD20N03L27 DPAK 75 Units/Rail
CASE 369A
DPAK
STYLE 2
PIN ASSIGNMENT
http://onsemi.com
N–Channel
D
S
G
NTD20N03L27–1 DPAK 75 Units/Rail
MARKING
DIAGRAM
20N3L = Device Code
Y = Year
WW = Work Week
YWW
20N3L
1
Gate 3
Source
2
Drain
NTD20N03L27T4 DPAK 2500 Tape & Reel
4
Drain
123
4
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 2.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS 30
––
43 –
–
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C)
IDSS –
––
–10
100
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS – – ±100 nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (Note 2.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th) 1.0
–1.6
5.0 2.0
–
Vdc
mV/°C
Static Drain–to–Source On–Resistance (Note 2.)
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on) –
–28
23 31
27
mΩ
Static Drain–to–Source On–Resistance (Note 2.)
(VGS = 5.0 Vdc, ID = 20 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C)
VDS(on) –
–0.48
0.40 0.54
–
Vdc
Forward Transconductance (Note 2.) (VDS = 5.0 Vdc, ID = 10 Adc) gFS – 21 – mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0 Vd
Ciss – 1005 1260 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
)
Coss – 271 420
Transfer Capacitance
f
=
1
.
0
MHz)
Crss – 87 112
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time td(on) – 17 25 ns
Rise Time (VDD = 20 Vdc, ID = 20 Adc,
VGS =50Vdc
tr– 137 160
Turn–Off Delay Time VGS = 5.0 Vdc,
RG = 9.1 Ω) (Note 2.) td(off) – 38 45
Fall Time
RG
9.1
Ω)
(Note
2.)
tf– 31 40
Gate Charge
(V 48 Vd I 15 Ad
QT– 13.8 18.9 nC
(VDS = 48 Vdc, ID = 15 Adc,
V
GS
= 10 Vdc
)
(
Note 2.
)
Q1– 2.8 –
VGS
=
10
Vdc)
(Note
2
.
)
Q2– 6.6 –
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD –
–1.0
0.9 1.15
–
Vdc
Reverse Recovery Time trr – 23 – ns
(IS=15 Adc VGS = 0 Vdc
ta– 13 –
(IS =15 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/µs) (Note 2.) tb– 10 –
Reverse Recovery Stored
Charge
dlS/dt
=
100
A/µs)
(Note
2
.
)
QRR – 0.017 – µC
2. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
NTD20N03L27
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3
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
24
16
28
12
20
0
40
0.015
0
30
1
15
0.40.2
–ID, DRAIN CURRENT (AMPS)
0
–VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
2
0.04
0.035
0.03
0.025
221512
0.02
0.015
0.01
0.005
05252832
Figure 3. On–Resistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain–to–Source Leakage Current
vs. Voltage
–VDS, DRAIN–TO–SOURCE VOLTAGE (V)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED)
–IDSS, LEAKAGE (nA)
40
–50 75500–25 100 150
0.5 1.5 5
028322420 3616 40
0.02
0.01
0.025
0.03
012159618330
–VDS, DRAIN–TO–SOURCE VOLTAGE (V)
5
10
20
25
35
1.4 2
4
0.6 0.8 1.2 1.6 1.8 1 2 2.5 3 3.5 4 4.5
818 3538
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω)
4812
12525 21 24 27
VGS = 10 V
VGS = 8 V
VGS = 6 V
VGS = 5 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V 8
32
36
TJ = 25°C
TJ = 100°C
TJ = –55°C
VDS > = 10 V
VGS = 5 V
TJ = 25°C
TJ = 100°C
TJ = –55°C
VGS = 5 V
VGS = 10 V
TJ = 25°C
ID = 10 A
VGS = 5 V
TJ = 100°C
TJ = 125°C
VGS = 0 V
TJ = 25°C
NTD20N03L27
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4
4
350
300
200
250
150
100
0
8
4
10
2
6
0
12
14
10
1500
824
C, CAPACITANCE (pF)
0
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate–to–Source and
Drain–to–Source Voltage vs. Total Charge
VGS, GATE–TO–SOURCE VOLTAGE (V)
1
1000
100
10
10
1100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (Ω)
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCE–TO–DRAIN VOLTAGE (V)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAIN–TO–SOURCE
AVALANCHE ENERGY (mJ)
2500
25 1251007550 150
06 14
0.0 0.4 0.50.30.2 0.60.1 1.0
10
16
8
12
0
18
20
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (V)
500
1000
200
14 258 6 2 0 6 10 12 16 18 20 23 2 4 8 10 12
6
4
2
0.7 0.8 0.9
50
VGS – VDS
Ciss
Coss
Crss
Q1 Q2
Q
ID = 20 A
TJ = 25°C
VGS
VDS = 20 V
ID = 20 A
VGS = 5.0 V
TJ = 25°C
tr
tf
td(off)
td(on)
VGS = 0 V
TJ = 25°C
ID = 24 A
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5
PACKAGE DIMENSIONS
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
–T– SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.250 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.033 0.040 0.84 1.01
F0.037 0.047 0.94 1.19
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.175 0.215 4.45 5.46
S0.020 0.050 0.51 1.27
U0.020 --- 0.51 ---
V0.030 0.050 0.77 1.27
Z0.138 --- 3.51 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
DPAK
CASE 369A–13
ISSUE AA
NTD20N03L27
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6
Notes
NTD20N03L27
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7
Notes
NTD20N03L27
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8
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