Document Number 6051
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
2N3738
VCBO Collector – Base Voltage
VCEO Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICCollector Current
IC(PK) Peak Collector Current
IBBase Current
PDTotal Device Dissipation at Tcase = 25°C
Derate 25°C
Tstg Operating and Storage Temperature Range
250V
225V
6V
1A
2A
0.5A
20W
0.133W/°C
–65 to 200°C
MECHANICAL DATA
Dimensions in mm
24.13 (0.95)
24.63 (0.97)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
4.08(0.161)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
12
POWER TRANSISTORS
NPN SILICON
TO66 Package (TO-213AA)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
FEATURES
• Hermetically Packaged.
• Low Saturation Voltage
• High Gain
Pin 1 = Base Pin 2 = Emitter Case = Collector
Document Number 6051
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
2N3738
Parameter Test Conditions Min. Typ. Max. Unit
225 0.1
0.25
0.5
1.0
0.1
30
40 200
25 2.5
1.0
10
20
35
V
mA
mA
mA
mA
mA
—
V
MHz
pF
—
IC= 5mA IB= 0
VCB = 250V IE= 0
VCE = 125V IB= 0
VCE = 250V VBE(OFF) = 1.5V
VCE = 125V VBE(OFF) = 1.5V
TC = 100°C
VEB = 6V
IC= 50mA VCE = 10V
IC= 100mA VCE = 10V
IC= 250mA VCE = 10V
IC= 250mA IB= 25mA
IC= 100mA VCE = 10V
IC= 100mA VCE = 10V
f = 10MHz
VCB = 100V IE= 0
f = 100KHz
IC= 100mA VCE = 20V
f = 1KHz
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Collector– Emitter Breakdown Voltage
Collector Base Cut–Off Current
Collector Emiiter Cut–Off Current
Collector Cut–Off Current
Emitter Base Cut–Off Current
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter on Voltage
Transition Frequency
Output Capacitance
Small Signal Current Gain
* Pulse Width ≤300μs , Duty Cycle < 2%
VCEO(BR)*
ICBO
ICEO
ICEV
IEBO
hFE*
VCE(sat)*
VBE(on)*
fT
Cob
hfe
DYNAMIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
