2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323 RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays DriversRelays, Displays, Lamps, Solenoids, Memories, etc. ESD Protected 2KV HBM In compliance with EU RoHS 2002/95/EC directives A L 3 3 C B Top View 1 1 K 2 E 2 D F G H J MECHANICAL DATA Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 REF. A B C D E F MARKING Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 K72 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Drain PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7' inch Gate Source ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V ID 115 mA 800 mA Continuous Drain Current Pulsed Drain Current 1 Maximum Power Dissipation IDM TA=25C TA=75C Thermal Resistance Junction-Ambient (PCB mounted) 2 Operating Junction and Storage Temperature PD 200 120 mW RJA 625 C / W TJ, TSTG -55~150 C Notes: 1. Maximum DC current limited by the package. 2. Surface mounted on FR4 board, t < 5sec. http://www.SeCoSGmbH.com/ 31-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 2N7002KW 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Parameter Symbol Min. Typ.2 Max. Unit Test Conditions Static Drain-Source Breakdown Voltage BVDSS 60 - - Gate-Threshold Voltage VGS(th) 1 - 2.5 Drain-Source On-Resistance RDS(ON) - - 4 - - 3 V VGS=0, ID=10A VDS= VGS, ID=250A VGS=4.5V, ID=200mA VGS=10V, ID=500mA Zero Gate Voltage Drain Current IDSS - - 1 A VDS=60V, VGS=0 Gate-Body Leakage Current IGSS - - 10 A VDS=0, VGS= 20V Forward Transconductance gfs 100 - - mS VDS=15V, ID=250mA nC VDS=15V, VGS=4.5V, ID=200mA nS VDD=30V, RL=150, ID=200mA, VGEN=10V, RG=10 pF VDS=25V, VGS=0V, f=1MHz IS=200mA, VGS=0V Dynamic Total Gate Charge Qg - - 0.8 Turn-On Time t(on) - - 20 Turn-Off Time t(off - - 40 Input Capacitance Ciss - - 35 Output Capacitance Coss - - 10 Reverse Transfer Capacitance Crss - - 5 Source-Drain Diode Diode Forward Voltage VSD - 0.82 1.3 V Continuous Diode Forward Current IS - - 115 mA Pulse Diode Forward Current ISM - - 800 mA http://www.SeCoSGmbH.com/ 31-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 2N7002KW Elektronische Bauelemente 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection CHARACTERISTIC CURVE FIG.1Ouput Characteristic FIG.3On Resistance vs Drain Current FIG.2Transfer Characteristic FIG.4 On Resistance vs Gate to Source Voltage FIG.5On Resistance vs Junction Temperature http://www.SeCoSGmbH.com/ 31-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 2N7002KW Elektronische Bauelemente 115mA , 60V, RDS(ON) 4 N-Ch Small Signal MOSFET with ESD Protection CHARACTERISTIC CURVE FIG.6Gate Charge Waveform FIG.8Threshold Voltage vs Temperature FIG.7Gate Charge FIG.9Breakdown Voltage vs Junction Temperature FIG.10SourceDrain Diode Forward Voltage http://www.SeCoSGmbH.com/ 31-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4