MOTORCLA SC XSTRS/R F 4eo ff u367254 ooso023 2 ff MOTOROLA _ | 7-3 7-7] mi SEMICONDUCTOR TECHNICAL DATA MTM&8PO08 Designers Data Sheet MTM8P10 Power Field Effect Transistor MTP8P08 P-Channel Enhancement-Mode MTPS8P10 Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, TMOS POWER FETs high speed power switching applications such as switching regu- 8 AMPERES lators, converters, solenoid and relay drivers. 'DS(on) = 0.4 OHM @ Silicon Gate for Fast Switching Speeds Switching Times 80 and 100 VOLTS Specified at 100C TMOS @ Designer's Data ~ Ipsg. VoS(on). VGS(th) and SOA Specified at Elevated Temperature @ Rugged SOA is Power Dissipation Limited Source-to-Drain Diode Characterized for Use With Inductive Loads G s MAXIMUM RATINGS MTM or MTP Rating Symbol Unit 8P0s 8P10 Drain-Source Voltage Voss 80 100 Vde Drain-Gate Voltage (Rgg = 1 MQ) VpoGR 80 100 Vde Gate-Source Voltage Continuous Ves +20 Vde Non-repstitive (tp < 50 ps) VGsm +40 Vpk Drain Current Continuous Ip 8 Ade MTM8Po08 Pulsed lom 25 MTM8P10 . . CASE 1-04 Total Power Dissipation @ Tc = 25C Pp 75 Watts Derate above 25C 0.6 Wr TO-2040A Operating and Storage Temperature Range TJ: Tstg 65 to 150 C THERMAL CHARACTERISTICS Thermal Resistance C/W Junction to Case Rac 1.67 Junction to Ambient TO0-204 Raa 30 TO-220 62.5 Maximum Lead Temperature for Soldering TL 276 C Purposes, 1/8 from case for 5 seconds MTPSP08 MTP8P10 CASE 221A-04 TO-220AB Designer's Data for Worst Case Conditions The Designer's Data Sheet permits the design of most circuits entirely from tha information presented. SOA Limit curves representing boundaries on device characteristics ara given to facilitate worst case design. MOTOROLA TMOS POWER MOSFET DATA 3-457MOTOROLA SC XSTRS/R FE T3902] 4 0 Bf eaezesy oosoe4 9 ff MTM/MTPS&P08, 10 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) | Characteristic Symbol Min | Max | Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS Vde (Veg = 0, Ip = 0.26 mA) MTM/MTP8P08 80 - - MTM/MTP8P10 100 _ Zero Gate Voltage Drain Current lpss pAdc (Vps = Rated Vpss, Vas = 0) 7 10 (Vpg = Rated Voss, Ves = 9 Ty = 125C) _ 160 Gate-Body Leakage Current, Forward (Vggr = 20 Vdc, Vps = 0} IassF - 100 nAdc Gate-Body Leakage Current, Reverse (Vggr = 20 Vdc, Vps = 0) lessR _ 100 nAdc ON CHARACTERISTICS* Gate Threshold Voltage Vasith) 2 45 Vde (Vps = Vas. Ip = 1 mA) ' 15 4 . Ty = 100C . Static Drain-Source On-Resistance (V@g = 10 Vde, Ip = 4 Ade) TDS(on) _ 0.4 Ohm Drain-Source On-Voltage (Vag = 10 V) VoSion) Vde {Ip = 8 Adc) - 48 (Ip = 4 Ade, Ty = 100C) - 3 Forward Transconductance (Vps = 15 V, Ip = 4A) aFS 2 _ mhos DYNAMIC CHARACTERISTICS Input Capacitance \Vpg = 25 , Ves = 0, Ciss - 1200 pF Output Capacitance f = 1 MHz) Coss - 600 Reverse Transfer Capacitance See Figure 11 Crss _ 180 SWITCHING CHARACTERISTICS (Ty = 100C) Turn-On Delay Time td(on) - 80 ns Rise Time (Vpp = 25 V, Ip = 0.5 Rated Ip tr 150 Rgen = 50 ohms) Turn-Off Delay Time See Figures 9, 13 and 14 tdloff = 200 Fall Time tf - 150 Tota! Gate Charge Qg 33 (Typ) 60 nc ~ (Vps = 0.8 Rated Vpgs, _ Gate-Source Charge Ip = Rated Ip, Veg = 10 V) Qgs 16 (Typ) Gate-Drain Charge Qga 17 (Typ) _ SOURCE DRAIN DIODE CHARACTERISTICS* Forward On-Voltage (lg = Rated Ip Vsp 3 (Typ) | 6 | Vde Forward Turn-On Time Ves = 0) ton Limited by stray inductance Reverse Recovery Time ter 300 (Typ) - | ns INTERNAL PACKAGE INDUCTANCE {TO-204} internal Drain Inductance la 5 (Typ) _- ni (Measured from the contact screw on the header closer to the source pin and the center of the die} Internal Source Inductance ls 12.5 (Typ) - (Measured from the source pin, 0.26 from the package to the source bond pad) INTERNAL PACKAGE INDUCTANCE (TO-220) Internal Drain Inductance la nH (Measured from the contact screw on tab to center of die) 3.5 (Typ) _ (Measured from the drain lead 0.25 from package to center of die} 4.5 (Typ) _ Internal Source Inductance Ls 7.5 (Typ) _ (Measured from the source lead 0.25 from package to source bond pad.) *Pulse Test: Pulse Width < 300 xs, Duty Cycle < 2%, MOTOROLA TMOS POWER MOSFET DATA 3-458ww MOTORCLA SC XSTRS/R F7- 3902] =e OD i 6367254 oaOq00es aff MTM/MTP8P08, 10 TYPICAL ELECTRICAL CHARACTERISTICS B12 QV al z = 1.4 2 2 z =f 8 B < & 51 z 3 a oO = z 2 og Z g S = E 08 oa = 8 8 2 aRAIN-TO-SOURCE VOL Volts 2 14 = -0 -5 0 8 8 7% 10 125 150 Vos: ORAIN-TO-SOURCE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) Figure 1, On-Region Characteristics Figure 2. Gate-Threshold Voltage Variation . With Temperature eS 2 5 Oo = > 16 5 a Ba 1.2 s gs 3 ss z 2 z= 0.8 z ez Ss = zs 04 a a 0 0 2 4 6 8 10 12 14 = 6 0 50 100 150 200 Vg, GATE-TO-SOURCE VOLTAGE (VOLTS) Ty, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Normalized Breakdown Voltage versus Temperature 2B 056 FS ut wy 048 2 = Eo g a we = 032 Bg o aad wy a = = 024 es 8 Z= @ 018 z = S 0.08 B 5 0 Ba 06 4 8 12 16 20 'p, DRAIN CURRENT (AMPS) Ty, JUNCTION TEMPERATURE (C} Figure 5. On-Resistance versus Drain Current Figure 6. On-Resistance Variation With Temperature MOTOROLA TMOS POWER MOSFET DATA 3-459MOTOROLA SC XSTRS [RE T*39 of) UNE o Af 367254 cOIAOeb MTM/MTP8P08, 10 SAFE OPERATING AREA INFORMATION (on) KAGE LIMIT LIMIT __ 1 Te Ip, DRAIN CURRENT (AMPS) 5 = 20, SINGLE Vpg, DRAIN-TO-SQURCE VOLTAGE {VOLTS} Figure 7, Maximum Rated Forward Biased Safe Operating Area FORWARD BIASED SAFE OPERATING AREA The FBSOA curves define the maximum drain-to- & MTM/MTPEP08 Ip, DRAIN CURRENT (AMPS) 20 40 a 0 Vps: DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 Figure 8. Maximum Rated Switching Safe Operating Area The power averaged over a complete switching cycle must be less than: source voltage and drain current that a device can safely TJtmax)_- Te handle when it Is forward biased, or when it is on, or Raic being turned on. Because these curves include the limi- tations of simultaneous high voltage and high current, up to the rating of the device, they are especially useful to designers of linear systems. The curves are based on acase temperature of 25C and a maximum junction tem- perature of 150C, Limitations for repetitive pulses at var- ious case temperatures can be determined by using the thermal response curves. Motorola Application Note, AN569, Transient Thermal Resistance-General Data and \ts Use provides detailed instructions. SWITCHING SAFE OPERATING AREA The switching safe operating area (SOA) of Figure 8 is the boundary that the load line may traverse without in- curring damage to the MOSFET. The fundamental timits are the peak current, Ip and the breakdown voltage, V(BR)DSS: The switching SOA shown in Figure 8 is ap- plicable for both turn-on and turn-off of the devices for switching times less than one microsecond. 0.01 0.01 0.02 006 = ON 02 05 1 t, TIME (ns) Rg, GATE RESISTANCE (QHMS} Figure 9. Resistive Switching Time Variation versus Gate Resistance 8 os e 03 Ee 02 Fr a z pw) Rascit) = rl Resc 5 = ol t Rese = 1.6 CW MAX = J | | D CURVES APPLY FOR POWER SE 006 tie PULSE TRAIN SHOWN S2 on b> READ TIME AT ty =e Tyo) Te = Pip A 2 on DUTY CYCLE, D = tyhg stpk) Te = Pipe) Rauct 2 10 20 60 100 200 500 1000 t, TIME (ms) Figure 10. Thermal Response MOTOROLA TMOS POWER MOSFET DATA 3-460MOTOROLA SC XSTRS/R FT* 3949) a4e o ff b3ez254 ooso0e7 4 ff MTM/MTP&P08, 10 C, CAPACITANCE (pF) Ciss Ves, GATE SOURCE VOLTAGE (VOLTS) Coss Ciss 10 20 Qg, TOTAL GATE CHARGE (nC) Ves | . Vos GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE [VOLTS) Figure 11, Capacitance Variation Figure 12. Gate Charge versus Gate-to-Source Voltage RESISTIVE SWITCHING Yop at ton oft p> tn RL dlon)te| beget t, dloff) > ti f Vout 90% 10% PULSE GENERATOR DUT / r OUTPUT, Vout | Vo, 90% INPUT, Vin 50% 50% 10% Z = INVERTED PULSE WIDTH Figure 13. Switching Test Circuit Figure 14. Switching Waveforms OUTLINE DIMENSIONS A fe | = 4i6 1 hes ome te Z W i Ley ig SEATING PLAHE: . , tT a paee le. - pe Tae Pepe Ie Io Ce i 200 | ait v Pa i NS : A : -| a He rr 4 Pg fis | t Lt} ss | t. | } ete | 8 41g WOTES: 2 POSTONALTOERACE FORMED sme smite Mr cons orogens [+1200 lwly @) PAI GATE - AL gT, aume must 2. POSITIONAL TOLERANCE FOR LEADS 2. SOURCE 3 Sone S Gal roerncs Azone neers Ac 2oor Aso [+ [sono @[wly @] 06) CASE RA ue LEA REEANTES A ALONE CASE 1-04 CASE 221A-04 TO-204AA TO-220AB Ceeeeeeeeeeeeee reer eee ee eee nese eee eee ee eer a MOTOROLA TMOS POWER MOSFET DATA 3-461