| +e == r= n wm ) Features * Low R, 50 Low NE Hi-Rel available metelics CORPORATION Tight batch matching available Broad optimum L.O. power range Available in many configurations c_ Optimum series Schottky for very tight matching Applications MSS-40,000 Series Medium Barrier Schottky Diode e Mixers: single diode, image reject, image enhancement, ring quad Doublers * Modulators Medium Barrier Specifications at 25C New Part Number Old Ve TYP. | Vee Min. | R, Typ. G Typ. | C; Typ. | NFoop | Ry Typ. | Feo Typ. Family-Spec #- Part Number Description @1MA!] @104A|}@5mA! @OV @ OV ne wae Outline (Volts) {Volts} (Ohms) (PF) (PF) (dB) (Ohms) (GHz} MSS-40,045-C15 | New Chip 42 3 12 .09 .09 6.5 7 253 MSS-40,045-P55 | MSKM-723-44 Chip-P55 42 3 12 09 21 6.5 7 253 MSS-40,045-P86 | MSKM-773-49 ChipP86 42 3 12 09 24 6.5 7 253 MSS-40,048-C15 | MSKM-OO1 Chip .40 3 12 12 12 6.5 7 190 MSS-40,048-P55 | MSKM-701 Chip-P55 40 3 12 12 24 6.5 7 190 MSS-40,048-P86 | MSKM-711 Chip-P86 40 3 12 12 27 6.5 7 190 MISS-40,141-B1Q | MSKM-717 Beam Lead- 42 3 15 .06 06 6.5 10 265 Single MSS-40,141-E26 | MSKM-717-U2 | Beam Lead-E20| .42 3 15 .06 16 6.5 10 265 MSS-40,141-H20 | MSKM-717-Q2 | Beam Lead-H20] .42 3 15 .06 24 6.5 10 265 MSS-40,148-B1O | MSKM-716 Beam Lead- 40 3 12 12 12 6.5 7 190 Single MSS-40,148-E26 |MSKM-716-U2 | Beam Lead-E20! .40 3 12 12 22 6.5 7 190 MISS-40,148-H20 | MSKM-716-Q2 | Beam Lead-H20] .40 3 12 12 30 6.5 / 190 MSS-40,155-B10 | MSKM-709 Beam Lead- 38 10 25 25 6.5t 5 127 Single MSS-40,155-E26 | MSKM-709-U2 |Beam Lead-E20] .38 3 10 25 35 6.5T 5 127 MSS-40,155-H20 | MSKM-709-Q2 |Beam Lead-H20| 38 3 10 25 43 6.5t 5 127 MISS-40,244-B20 | New Series T-B20 44 3 24 .08 .08 7.0 19 105 MSS-40,244-E30 |New Series T-E30 44 3 24 .08 18 70 19 105 MSS-40,248-B20 |New Series T-B20 44 3 15 12 12 7.0 10 133 MISS-40,248-E30 |New Series T-E30 44 3 15 12 22 7.0 10 133 MSS-40,255-B20 |New Series T-B20 38 3 10 25 25 6.5f 5 127 _MSS-40, 255-E30 New Series T-E30 38 3 10 25 35 6.5t 5 127 MISS-40,448-B4 1 New Beam Lead 40 3 12 12 15 6.0 7 190 Ring Quad MSS-40,448-E40 | New Beam Lead 40 3 12 12 24 6.0 7 190 RiNgG Quad-E40 MSS-40,448-E45 |New Beam Lead 40 3 l2 12 20 6.0 7 190 king Quad-E45 NMSS-40,455-B40 | MSKM-394 Beam Lead 38 3 10 .25* 25* 6.5T 5 127 Ring Quad MSS-40,455-E40 |MSKM-394-04 |Beam Lead 38 3 10 .25* 32* 6.5t 5 127 _ Ring Quad-E40 MSS-40,455-H40 |MSKM-394-03 |Beam Lead 38 3 10 .25* 42* 6.5T 5 127 RING Quad-H40 *Diagonal *See page 2 **eSFCO x Meta rnC} FCO = Hz, R= Ohms, Cz =Faracsc Medium Barrier Schottky Description The Metelics MSS-40,000 series silicon Schottky barrier diodes are constructed using advanced technology, mate- rials and processes, resulting in a lower series resistance {R,) than is produced with conventional methods. This N-type mixer diode is well-suited for applications where 3 dBm to +6 dBm per diode is available. The broad usable range of the required L.O. source makes these diodes ideal for many general purpose applications. Because of the wide variety of applications, this diode is offered in a variety of configurations. Typical Data |-V Forward Curve 100 mA F aad f 10 = ee C E 3 + 44 gS Ee = o = q 2 [ / q oat LIAL 100 pA = / = 10 i 0 5 1.0 Forward Voltage (VOLTS) The IV curve on the 40,000 series diodes is very well behaved making this series the optimum for very tight matching. Maximum Ratings Storage Temperature ............., ~65 to + 150C Operating Temperature ............ ~65 to + 150C Soldering TemperatureChips ...... 230 for 30 sec. Soldering TemperatureB.L......... 230 for 10 sec. DC Power Dissipation ............... 100 mW max. derate linearly to O mW at + 150C Beam Lead Pull Strength................... 6 grams CAUTION: Static Sensitive Devirce |-V Reverse Curve T OTT TTT T op 100 pA ToT TTT TT TTT 10 nA 1TpA 100 nA Reverse Current 10 nA nA Ludi tL 100 pA {ft tii { Viti Lt itil A 1 10 10C 1000 Reverse Voltage (VOLTS) NF & ZIF VS LO Power 10 ;- \ TT [I 500 \ oo F NF \ \ Z 8 F 300 NF | Zir (dB) | (OHMS) 7 pL Ps 200 6 100 | 0 +3 +6 MSS-40,048-P86 5 | | -6 -3 L.O, Power (dBm) Note** NF measured at 9.375 (3 GHzt) 500 source impedance 500 load at 30 MHz, 1.5 dB NF amplifier <1 load at DC Zip Measured using a 10 kHz signal in same set-up NF gst = NF gsb +3 dBi (| METELICS CORPORATION 975 Stewart Drive Sunnyvale, CA 94086 Telephone: (408) 737-8131 TWX: 910-339-9537 FSCM & CAGE 59365 eee ee Smith Impedance Chart 500 Reference 1.0 Alpect = I mA, + 2 dBm BIrect = 2MA, +3 dBm CIrect=4 MA, +6 dBm Equivalent Circuits Packaged Beam Lead Cp Lp Cp T om 1 - Lp Te eT | 2 R I Rs > | . < Cj | 2 Cj | Ler \ We | Tl t ait t t ! t i L____ypya | ry t Rj | Rj i \ Chip ! Poe Notes: Consult factory for special versions, configurations, packages, high reliability screening, or custom designs. Disclaimer: This data sheet is issued to provide information only and Metelics Corporation reserves the right to alter without notice the specifications. design, price, or conditions of supply of this product._ Package Outlines Dimensions are in Mils (mm). POLARITY: METELICS CORPORATION 975 Stewart Drive Sunnyvale, CA 94086 Telephone: (408) 737-8181 TWX: 910-339-9537 FSCM & CAGE 59365 CATHODE ANODE DOT .CAP CUT LEAD PAD POINTED BEAM B10 eet 2 (.30) 5 (13) 9.5(.24) 8.5 (22) t 12 (.30) 10 (25) B20 85 8.0 (22) 21.90 (20) wires i. 10(.28) ce se po 9524) f B40 7 10 (.25) TYP | 11 (28) 6 (15) (19) Cp = .03 pF Lp=.1 0H 18 (.46) SQ B41 Cp =.06 pF Lp=.t0 nH pee - Cp = .03 pF Lp =.10 nH 5.0(.13 ips Tn oe 4,75 (.12) TYF C15,C16 E26 E30 600 . -200 (5.1) | Nom. 140 (3.56) 22 B PLoa 110 (2.79) Gold Pad 8 { | 90 (2.29) 1542 _ (.38 + .005) ; t (+4) - Cut Lead oO $9 Model! Pad Dia 1 of 22 (.56) C15 | 1+ .1(.03 + .003) Large 100 70 18 (46) C16 | 221 (.06 + .03) Wnitg Dot Typ. Max. Cp =.1 pF ri 2 (Cathode) 50 Lp =.45 nH Max 13 5(.13) Gold } aa 3(.08) Back |. 32 3) 4 7; <= + cp bp oi 50 (1.27) MAX. CERAMIC SUBSTRATE E35 Cp =.07 pF Lp =.4nH 126 50 (1.27) SQUARE RESIN ; 1a) MIN 22 (.56) r. me | 12 (3 oO s a CERAMIC SUSTRATE TY E40 Se ie. (4 PLCS) 50 (1.27) p=.1 pF te as nH 22 (.56} 18 (48) le r RESIN ENCAPSULATION CERAMIC SUBSTRATE q 50 (1.27) SQUARE MAX. Oo CERAMIC SUSTRATE Cp =.07 pF [ 125 (3.48) MIN (4 PLCS) 55 (1.4) Cp=.13pF Fi (7,3) DIA 22 (56) Lp =.38 nH 72 (30) + =e DOUBLE AING 50 (1.2 a |fomens To) Tate RESIN zt 32 38 102 (2.59) a7 (2.06) 23.58 17 (43) Cut Lead co 1412 64) 64) MIN. 8.2) 9212.94) at a Square a | T 102 (2.59) 81 (2.06) cp=.18 pF Lp=.5nH 180 sn +| 81.20 MIN. 41.10) eiee oft H40 LID DIAMETER , 84 (2.13) +--+ 1. ei 102 (2.59) 81 (2.06) 454.38) 23 (.58) f] 17(.43) patsy, OA 8 -_ 7 P86 64 (1.63) UI 60 (1.52) wo 2.08) Cp =.18 pF 2018.34 70 (1.78) Lp=.6n1 (.33) ts 180 (4.57) 780 (4.83) I MIN 8(.20) 4(-10) 35 {.89) : \ 25 (.64) Cp=.15pF | Lp =1 nH Date Code 8307 Rev. B 8636 Printed in U.S.A.