2N7002DW
Document number: DS30120 Rev. 17 - 2
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2N7002DW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) Max
ID Max
TA = +25°C
60V
7.5Ω @ VGS = 5V
0.23A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Ordering Information (Note 6)
Part Number
Compliance
Case
Packaging
2N7002DW-7-F
Standard
SOT363
3,000/Tape & Reel
2N7002DWQ-7-F
Automotive
SOT363
3,000/Tape & Reel
2N7002DW-13-F
Standard
SOT363
10,000/Tape & Reel
2N7002DWQ-13-F
Automotive
SOT363
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to https://www.diodes.com/quality/product-compliance-definitions/.
6. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2017
2018
2019
2020
2021
2022
2023
Code
J
K
L
M
N
P
R
E
F
G
H
I
J
K
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT363
Top View
Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
K72 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
K72
K72
YM
YM
2N7002DW
Document number: DS30120 Rev. 17 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS 1.0M
VDGR
60
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Pulsed
VGSS
±40
V
Continuous Drain Current (Note 8) VGS = 5V
Steady
State
TA = +25C
TA = +70C
TA = +100C
ID
0.23
0.18
0.14
A
Maximum Continuous Body Diode Forward Current (Note 8)
IS
0.53
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
0.8
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 7)
TA = +25°C
PD
0.31
W
TA = +70°C
0.2
TA = +100°C
0.12
Thermal Resistance, Junction to Ambient (Note 7)
Steady State
RJA
410
°C/W
Total Power Dissipation (Note 8)
TA = +25°C
PD
0.4
W
TA = +70°C
0.25
TA = +100°C
0.15
Thermal Resistance, Junction to Ambient (Note 8)
Steady State
RJA
318
°C/W
Thermal Resistance, Junction to Case (Note 8)
Steady State
RJC
135
°C /W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
60
70
V
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C
IDSS
1.0
500
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(TH)
1.0
2.0
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C
RDS(ON)
3.2
4.4
7.5
13.5
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
0.5
1.0
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage
VSD
0.78
1.5
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
22
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
11
25
pF
Reverse Transfer Capacitance
Crss
2.0
5.0
pF
SWITCHING CHARACTERISTICS (Note 10)
Turn-On Delay Time
tD(ON)
7.0
20
ns
VDD = 30V, ID = 0.2A,
RL = 150, VGEN = 10V,
RGEN = 25
Turn-Off Delay Time
tD(OFF)

11.0
20
Notes: 7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
2N7002DW
Document number: DS30120 Rev. 17 - 2
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0
0.2
0.4
0.6
0.8
1.0
01 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
0 0.2
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Figure 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Figure 3 On-Resistance vs. Junction Temperature
J°
V = 5.0V, I
GS D = 0.05A
0
V , GATE TO SOURCE VOLTAGE (V)
Figure 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 10 12 14 16 18
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
V , DRAIN-SOURCE VOLTAGE (V)
Figure 5 SOA, Safe Operation Area
DS
I , DRAIN CURRENT (A)
D
T = 150
T = 25
Single Pulse
J(max)
A
0.001
0.01
0.1
1
0.1 1 10 100
R
Limited
DS(on)
DC
P = 10s
WP = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100
W
TJ = 25°C
150°C
25°C
100µs
2N7002DW
Document number: DS30120 Rev. 17 - 2
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2N7002DW
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
SOT363
Dim
Min
Max
Typ
A1
0.00
0.10
0.05
A2
0.90
1.00
1.00
b
0.10
0.30
0.25
c
0.10
0.22
0.11
D
1.80
2.20
2.15
E
2.00
2.20
2.10
E1
1.15
1.35
1.30
e
0.650 BSC
F
0.40
0.45
0.425
L
0.25
0.40
0.30
a
0°
8°
--
All Dimensions in mm
Dimensions
Value
(in mm)
C
0.650
G
1.300
X
0.420
Y
0.600
Y1
2.500
e
D
L
E1
b
E
F
A2
A1
ca
Y1 G
Y
X
C
2N7002DW
Document number: DS30120 Rev. 17 - 2
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© Diodes Incorporated
2N7002DW
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