SKKT161/08D - Semikron - Datasheet.Directory

SEMIPACK

®

3

Thyristor/ Diode Modules

SKKT 131 SKKH 131

SKKT 161 SKKH 161

SKKT SKKH

Features

•Heat transfer through aluminium

nitride ceramic isolated metal

baseplate

•Precious metal pressure

contacts for high reliability

•UL recognized, file no. 63 532

Typical Applications

•DC motor control (e. g. for

machine tools)

•Temperature control (e. g. fo r

ovens, chemical processes)

•Professional light dimming

(studios, theaters)

V

RSM

V

RRM

(dv/ I

TRMS

(maximum values for continuous operation)

V

DRM

dt)

cr

240 A 270 A 240 A 270 A

I

TAV

(sin. 180; T

case

= . . .)

VVV/µs 150 A (85 °C) 172 A (81 °C) 150 A (85 °C) 172 A (81 °C)

SKKT SKKT SKKH SKKH

900 800 500 131/08 D 161/08 D 131/08 D 161/08 D

1300 1200 500 131/12 D 161/12 D – 161/12 D

1300 1200 1000 131/12 E 161/12 E 131/12 E 161/12 E

1500 1400 1000 131/14 E 161/14 E 131/14 E 161/14 E

1700 1600 1000 131/16 E 161/16 E 131/16 E 161/16 E

1900 1800 1000 131/18 E 161/18 E 131/18 E 161/18 E

2100 2000 1000 131/20 E – 131 /20 E –

2300 2200 1000 131/22 E – 131 /22 E –

Symbol Conditions SKKT 131 SKKT 161 Units

SKKH 131 SKKH 161

I

TAV

sin. 180; T

case

= 81 °C – 172 A

85 °C 150 160 A

92 °C130–

I

D

B2/B6 T

amb

P 16/170 F 295/375 325/410 A

P 16/200 F 300/380 330/415 A

=P 16/300 F – /390 – /425 A

I

RMS

W1/W3 35 °C; P 16/170 F 340/3x290 380/3x310 A

P 16/200 F 385/3x312 385/3x337 A

P 16/300 F – /3x318 – /3x344 A

I

TSM

T

vj

= 25 °C; 10 ms 4 700 5 400 A

T

vj

= 130 °C; 10 ms 4 000 5 000 A

i

2

tT

vj

= 25 °C; 8,3 ... 10 ms 110 000 145 000 A

2

s

T

vj

= 130 °C; 8,3 ... 10 ms 80 000 125 000 A

2

s

t

gd

T

vj

= 25 °C; I

G

= 1 A;

di

G

/dt = 1 A/µs1µs

t

gr

V

D

= 0,67 . V

DRM

2µs

(di/dt)

cr

T

vj

= 130 °C200A/µs

t

q

T

vj

= 130 °C typ. 50 . . . 150 µs

I

H

T

vj

= 25 °C typ. 150; max. 400 mA

I

L

T

vj

= 25 °C; R

G

= 33 Ωtyp. 0, 3; m a x. 1 A

V

T

vj

= 25 °C; I

T

= 500 A max. 1,7 max. 1,55 V

V

(TO)

T

vj

= 130 °C11V

r

T

vj

= 130 °C 1,4 1,0 mΩ

I

DD

; I

RD

T

vj

= 130 °C; V

DD

= V

DRM

V

RD

= V

RRM

max. 50 max. 50 mA

V

GT

T

vj

= 25 °C; d. c. 3 V

I

GT

T

vj

= 25 °C; d. c. 150 mA

V

GD

T

vj

= 130 °C; d. c. 0,25 V

I

GD

T

vj

= 130 °C; d. c. 10 mA

R

thjc

cont. 0,19/0,09 °C/W

sin. 180 per thyristor/ 0,20/0,10 °C/W

rec. 120 per module 0,22/0,11 °C/W

R

thch

0,06/0,03 °C/W

T

vj

, T

stg

– 40 . . . +130 °C

V

isol

a. c. 50 Hz; r.m.s.; 1 s/1 min 3600/3000 V∼

M

1

to heatsink SI (US) units 5 (44 lb. in.) ± 15 %

1)

Nm

M

2

to terminals SI (US) units 9 (80 lb. in.) ± 15 %

2)

Nm

a5

.

9,81 m/s

2

w approx. 820 g

Case → page B 1 – 76 SKKT: A 13 SKKH: A 14











1)

See the assembly instructions

2)

The screws must be lubricated

0896