ISA SGS-THOMSON BTA16 BW/CW MICROELECTRONICS BTB16 BW/CW SNUBBERLESS TRIACS FEATURES a HIGH COMMUTATION : (di/dt)c > 14A/ms 2 without snubber Ag A a HIGH SURGE CURRENT : ITsm = 160A VorM UP TO 800V S = BTA Family : INSULATING VOLTAGE = 2500V(nms) (UL RECOGNIZED : 81734) . y Or DESCRIPTION y The BTA/BTB16 BW/CW triacs use high per- Ay Mg formance glass passivated chips technology. The SNUBBERLESS concept offer suppression of RC network and it is suitable for application TO 220 AB such as phase control and static switching on in- (Plastic) ductive or resistive load. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current BTA Tc = 80C 16 A (360 conduction angle) BTB | Tc =90C ITSM Non repetitive surge peak on-state current tp = 8.3 ms 170 A ( Tj initial = 25C ) tp = 10 ms 160 let (2t value tp = 10 ms 128 A2s di/at Critical rate of rise of on-state current Repetitive 20 Als Gate supply :Iq = 500mA_ dig/dt = 1A/ps F = 50 Hz Non 100 Repetitive Tstg Storage and operating junction temperature range - 40 to + 150 C Tj - 40 to + 125 C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 230 me) from case Symbol Parameter BTA / BTB16-... BW/CW Unit 400 600 700 800 VDRM Repetitive peak off-state voltage 400 600 700 800 Vv VRRM Tj = 125 C July 1991 15 395BTA16 BW/CW / BTB16 BW/CW THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) |Junction to ambient 60 C/iW Rth (j-c) DC | Junction to case for DC BTA 3.1 C/W BTB 2.3 Rth (j-c) AC | Junction to case for 360 conduction angle BTA 2.3 C/W ( F= 50 Hz) BTB 1.75 GATE CHARACTERISTICS (maximum values) PG (Av) = 1W PM = 40W (tp =20 ys) IGM =4A (tp=20 ys) VGm = 16V (tp = 20 ps). ELECTRICAL CHARACTERISTICS Symbol Test Conditions Quadrant Suffix Unit BW cw IaT Vp=12V (DC) AL=33aQ Tj=25C Il-IW MIN 2 1 mA MAX 50 35 VGT Vp=12V (DC) RiL=332 Tj=25C I-H1-UH MAX 1.5 Vv Vap Vpb=VoRM RL=3.3ka Tj=125C 1-H-HII MIN 0.2 Vv tgt Vp=VoRM = !G = 500mA Tj=25C (-It-11 TYP 2 ps dig/dt = 3A/ps IL Ig=1.2 IGT Tj=25C 1-H TYP 40 - mA It TYP 80 - i-llt MAX 50 ul MAX . 80 IH * IT= 500mA gate open Tj=25C MAX 50 35 mA VT * ITM= 22.5A tp= 380us Tj=25C MAX 1.60 v IDRM Vpro Rated : Tj=25C MAX 0.01 mA IRAM VRRM Rated Tj=125C MAX 2 dV/dt * Linear slope up to Vp=67%VORM Tj=1 25C MIN 500 250 Vins gate open TYP 750 500 (di/dt)c * | Without snubber Tjz126C MIN 14 8.5 A/ms TYP 28 17 * For either polarity of electrode Ae voltage with reference to electrode Ai. 2/5 396 A394, BeSorteomonesBTA16 BW/CW / BTB16 BW/CW ORDERING INFORMATION Package / Vv BTA 400 (Insulated) 600 700 800 BTB 400 (Uninsulated) 600 700 800 a = Q = X x x Xx x x X X [>< | >K [>< [>< [x [>< [>< Fig.1 : Maximum RMS power dissipation versus RMS Fig.2 : Correlation between maximum RMS power on-state current (F=50Hz). dissipation and maximum allowable temperatures (Tamb (Curves are cut off by (di/dt)c limitation) and Tease) for different thermal resistances heatsink + contact (BTA). P (W) P (WwW) Tease (C) 25 r r | 25 7 180 Rth=_-0 c/w e 75 \ 2 L Ov 180 1 c/w 7 fa) L / ins . > 20 _ 2 cw 1s a- 120 is 1 one 85 Q: 30 ar | as | ! 95 v0 at 0 v0 105 oO | De AA | 4 5 5 x 1 Tamb (C) "8 l TRMs)}(A) Li] 0 t i Oo 126 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 Fig.3 : Correlation between maximum RMS power Fig.4 : RMS on-state current versus case temperature. dissipation and maximum allowable temperatures (Tamb and Tease) for different thermal resistances heatsink + contact (BTB). P (Ww) Tease (C) 'Tams) (A) 26 Rth= 0 c/w 20 1 cewle gS BTB 20 2 ccm I XZ 4 Sih 90 8 16 BTA Sep " "0 100 Ol = 180 \ 5 5 105 Ti c amb ('C) \, Tcase("C) \ 9 | | 110 0 1 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 3/5 ij SSS-THOMSON VE MicRoELEcTONICs 397BTA16 BW/CW / BTB16 BW/CW Fig.5 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. (Zth j-c : BTA version only) Zth ( C/W) 1.0E-01 TOE-03 1.0E-02 .0E-01 1.0E+00 1001 1.0E+02 1.0603 Fig.7 : Non Repetitive surge peak on-state current versus number of cycles. Itgm (A) 140 Tj initial 25C 120 1 Number of cycles 1 10 100 1000 Fig.9 : On-state characteristics (maximum values). I apg) 1000 Tj initial 25C 100 Tj max Vto = 0.85V Rt =0.0300 Vt (Vv) 0.1 0 1 2 3 4 6 - SZ RICH 398 Fig.6 : Relative variation of gate trigger current and holding current versus junction temperature. igt{Til -AnITj] gt Ty-25C th Tj=25 C 2.5 TN 15 Igt 1 MSM th + rot | Pt 0.6 t TCC) 4 4 1 L 9 ~40-30-20-10 G 10 20 30 40 60 60 70 80 90 100110120130 Fig.8 : Non repetitive surge peak on-state current fora sinusoidal pulse with width : t < 10ms, and corresponding value of 2t. Igy (A). It (a's) 1000 Tj initial 25C 'Tsm 100BTA16 BW/CW / BTB16 BW/CW PACKAGE MECHANICAL DATA (in millimeters) TO 220 AB Plastic 4.65 + 0.17 44.7 max 0.5 0.45 2.4%0.3 2.54 + 0.26 Cooling method : by conduction (method C) Marking : type number Weight : 2 g Polarity :NA 5/5 G7 $SS:THOMSON S/ Mic ondeonteties 309