FDS2070N7 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. * 4.1 A, 150 V. RDS(ON) = 78 m @ VGS = 10 V RDS(ON) = 88 m @ VGS = 6.0 V * High performance trench technology for extremely low RDS(ON) Applications * High power and current handling capability * Synchronous rectifier * Fast switching, low gate charge (38nC typical) * DC/DC converter * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size 5 Absolute Maximum Ratings Symbol Bottom-side Drain Contact 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 150 V VGSS Gate-Source Voltage 20 V ID Drain Current 4.1 A - Continuous (Note 1a) - Pulsed 30 Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) 3.0 (Note 1b) 1.8 W -55 to +150 C (Note 1a) 40 C/W (Note 1) 0.5 Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS2070N7 FDS2070N7 13'' 12mm 2500 units 2004 Fairchild Semiconductor Corporation FDS2070N7 Rev D(W) FDS2070N7 February 2004 Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 150 V, ID= 10 A L = 8.8 mH 440 mJ 10 A Off Characteristics ID = 250 A VGS = 0 V, BVDSS TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 A IGSS Gate-Body Leakage VGS = 20 V, VDS = 0 V 100 nA BVDSS On Characteristics 150 ID = 250 A, Referenced to 25C V 154 mV/C (Note 2) ID = 250 A VGS(th) Gate Threshold Voltage VDS = VGS, VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 A, Referenced to 25C 2 2.6 -7 gFS Forward Transconductance VGS = 10 V, ID = 4.1 A VGS = 6.0V, ID = 3.8 A VGS = 10 V, ID = 4.1 A,TJ = 125C VDS = 10 V, ID = 4.1 A 57 60 111 24 VDS = 75 V, V GS = 0 V, f = 1.0 MHz 1884 4 V mV/C 78 88 160 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics pF 102 pF 35 pF VGS = 15 mV, f = 1.0 MHz 1.6 VDD = 75 V, ID = 1 A, VGS = 10 V, RGEN = 6 10 20 ns 6 12 ns (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 40 64 ns tf Turn-Off Fall Time 20 36 ns Qg Total Gate Charge 38 53 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 75 V, ID = 4.1 A, VGS = 10 V 8 nC 11 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage Diode Reverse Recovery Time IF = 4.1A Diode Reverse Recovery Charge diF/dt = 100 A/s 0.75 (Note 2) (Note 2) 2.5 1.2 A V 75 nS 404 nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 40C/W when mounted on a 1in2 pad of 2 oz copper b) 85C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS2070N7 Rev D(W) FDS2070N7 Electrical Characteristics FDS2070N7 Dimensional Outline and Pad Layout FDS2070N7 Rev D(W) FDS2070N7 Typical Characteristics 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) VGS = 10V 6.0V 30 4.5V 20 4.0V 10 VGS = 4.0V 1.4 4.5V 1.2 6.0V 10V 1 0.8 0 0 2 4 6 8 0 10 5 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 25 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. ID = 4.1 A VGS = 10V ID = 2.1A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 0.16 2.6 2.2 1.8 1.4 1 0.6 0.14 TA = 125oC 0.12 0.1 0.08 0.06 TA = 25oC 0.2 0.04 -50 -25 0 25 50 75 100 125 2 150 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 IS, REVERSE DRAIN CURRENT (A) 100 TA = -55oC VDS = 20V ID, DRAIN CURRENT (A) 15 ID, DRAIN CURRENT (A) 25oC 40 125oC 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2.5 3 3.5 4 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS2070N7 Rev D(W) FDS2070N7 Typical Characteristics 2500 f = 1MHz VGS = 0 V VDS = 25V ID = 4.1A 50V 8 CISS 2000 75V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 1500 1000 2 500 COSS CRSS 0 0 0 10 20 30 40 0 30 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 120 150 50 10 P(pk), PEAK TRANSIENT POWER (W) R DS(ON) LIMIT 100s 10ms 1 1ms 100ms 1s DC 0.1 V GS = 10V SINGLE PULSE R JA = 85 o C/W 0.01 T A = 25 oC 0.001 0.1 1 10 100 30 20 10 0 0.01 1000 SINGLE PULSE R JA = 85C/W T A = 25C 40 0.1 1 V DS , DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t 1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 90 Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 R JA (t) = r(t) * R JA R JA = 85 C/W D = 0.5 0.2 0.1 P(pk) 0.1 t1 0.05 t2 0.02 T J - T A = P * R JA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.01 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDS2070N7 Rev D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM ImpliedDisconnectTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I8