PD - 94201C IRF3710S IRF3710L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET(R) Power MOSFET D VDSS = 100V RDS(on) = 23m G ID = 57A S Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D 2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications. D2Pak IRF3710S TO-262 IRF3710L Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 57 40 180 200 1.3 20 28 20 5.8 -55 to + 175 Units A W W/C V A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA www.irf.com Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)** Typ. Max. Units --- --- 0.75 40 C/W 1 09/15/09 IRF3710S/IRF3710L Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 --- --- 2.0 32 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.13 --- --- --- --- --- --- --- --- --- --- 12 58 45 47 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 LS Internal Source Inductance --- 7.5 Ciss Coss Crss EAS Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy --- 3130 --- 410 --- 72 --- 1060 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 23 m VGS = 10V, ID =28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- VGS = 10V, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 280 mJ IAS = 28A, L = 0.70mH D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 57 --- --- showing the A G integral reverse --- --- 230 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 28A, VGS = 0V --- 140 220 ns TJ = 25C, IF = 28A --- 670 1010 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.70mH, RG = 25, IAS = 28A, VGS=10V. (See Figure 12). ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. 2 This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . Uses IRF3710 data and test conditions. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com IRF3710S/IRF3710L 1000 1000 VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V 100 VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP 10 3.5V 1 20s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 0.1 10 3.5V 1 20s PULSE WIDTH Tj = 175C 0.1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 1000.00 3.0 I D = 57A 2.5 R DS(on) , Drain-to-Source On Resistance 100.00 T J = 175C 10.00 T J = 25C 1.00 VDS = 50V 15V 20s PULSE WIDTH 0.10 3.0 4.0 5.0 6.0 7.0 8.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 9.0 2.0 (Normalized) ID, Drain-to-Source Current ( ) 10 VDS, Drain-to-Source Voltage (V) 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF3710S/IRF3710L VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss Crss 100 12.0 ID= 28A VGS, Gate-to-Source Voltage (V) 100000 10.0 VDS= 80V VDS= 50V VDS= 20V 8.0 6.0 4.0 2.0 0.0 10 1 10 0 100 60 80 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000.00 ISD, Reverse Drain Current (A) 40 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.00 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 175C 10.00 T J = 25C 1.00 100sec 10 1msec 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.10 0.1 0.0 0.5 1.0 1.5 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 2.0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF3710S/IRF3710L 60 RD VDS VGS 50 D.U.T. RG + -VDD I D , Drain Current (A) 40 V GS 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 10 90% 0 25 50 75 100 TC , Case Temperature 125 150 175 ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC) D = 0.50 Thermal Response 0.20 0.1 0.10 P DM 0.05 0.02 SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF3710S/IRF3710L 550 ID 15V TOP D.U.T RG 20V VGS IAS 440 DRIVER + V - DD A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS 11A 20A 28A BOTTOM 330 220 110 0 25 50 75 100 125 150 175 ( C) Starting T , Junction Temperature J Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF3710S/IRF3710L Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRF3710S/IRF3710L D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ 3$57180%(5 )6 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF3710S/IRF3710L TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$03/( 7+,6,6$1,5// /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7 237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF3710S/IRF3710L D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2009 10 www.irf.com