MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -40V IC = -200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile Complementary NPN Type MMBT3904FA Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: X2-DFN0806-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0008 grams (approximate) C X2-DFN0806-3 B B C E E Top View Bottom View Device Symbol Top View Device Schematic Ordering Information (Note 4) Product MMBT3906FA-7B Notes: Marking 3N Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 3N 3N = Product Type Marking Code Top View Bar Denotes Base and Emitter Side MMBT3906FA Document number: DS36017 Rev. 1 - 2 1 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3906FA Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -6.0 V Continuous Collector Current IC -200 mA Peak Pulse Collector Current ICM -500 mA Value 435 287 150 -55 to +150 Unit mW C/W C/W C Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage and Temperature Range Symbol PD RJA RJL TJ, TSTG ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 200 Unit V V JEDEC Class 3A B 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT3906FA Document number: DS36017 Rev. 1 - 2 2 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3906FA Thermal Characteristics and Derating Information Max Power Dissipation (W) - IC Collector Current (A) 0.45 VCE(sat) Limited 100m DC 1s 100ms 10ms 10m 1ms Single Pulse T amb=25C 100m 100s 1 10 - VCE Collector-Emitter Voltage (V) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 20 Maximum Power (W) Thermal Resistance (C/W) 100 120 140 160 100 Single Pulse T amb=25C 100 1k 10 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS36017 Rev. 1 - 2 80 Derating Curve Pulse Width (s) MMBT3906FA 60 Temperature (C) Safe Operating Area 300 275 Tamb=25C 250 225 200 175 D=0.5 150 125 100 D=0.2 Single Pulse 75 D=0.05 50 25 D=0.1 0 100 1m 10m 100m 1 10 40 3 of 7 www.diodes.com Pulse Power Dissipation July 2013 (c) Diodes Incorporated MMBT3906FA Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Base Breakdown Voltage BVCBO -40 V IC = -10A, IE = 0 Collector-Emitter Breakdown Voltage (Note 8) BVCEO -40 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -6.0 V IE = -10A, IC = 0 Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB(OFF) = -3.0V Collector Cutoff Current ICBO -50 nA VCB = -30V, IE = 0 IBL -50 nA VCE = -30V, VEB(OFF) = -3.0V hFE 60 80 100 60 30 300 IC = -100A, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(sat) -0.25 -0.40 V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA Base-Emitter Saturation Voltage VBE(sat) -0.65 -0.85 -0.95 V IC = -10mA, IB = -1.0mA IC =- 50mA, IB = -5.0mA Output Capacitance Cobo 4.5 pF VCB = -5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo 10 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 2.0 12 k Voltage Feedback Ratio hre 0.1 10 x 10 Small Signal Current Gain hfe 100 400 Output Admittance hoe 3.0 60 S fT 300 MHz Delay Time td 35 ns Rise Time tr 35 ns Storage Time ts 225 ns Fall Time tf 75 ns Base Cutoff Current Test Condition ON CHARACTERISTICS (Note 8) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product -4 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz SWITCHING CHARACTERISTICS Note: VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT3906FA Document number: DS36017 Rev. 1 - 2 4 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3906FA Typical Electrical Characteristics (@TA = +25C, unless otherwise specified.) 0.20 400 IB = -2mA IB = -1.8mA 0.16 350 IB = -1.2mA 0.12 IB = -1mA IB = -0.8mA 0.08 300 IB = -0.6mA IB = -0.4mA T A = 125C 250 TA = 85C 200 T A = 25C 150 100 TA = -55C 0.04 IB = -0.2mA 0 0 50 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 1 1 IC/IB = 20 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 T A = 150C 0.1 T A = 125C TA = 85C T A = 25C TA = -55C 1.2 Gain = 10 1.0 0.8 TA = -55C T A = 25C 0.6 TA = 150C TA = 125C 0.4 TA = 85C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current MMBT3906FA Document number: DS36017 Rev. 1 - 2 T A = 125C TA = 85C TA = 25C TA = -55C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 T A = 150C 0.1 0.01 0.1 0.01 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) VCE = 1V TA = 150C IB = -1.4mA hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) IB = -1.6mA 5 of 7 www.diodes.com 1.2 Gain = 10 1.0 0.8 0.6 TA = -55C T A = 25C TA = 150C 0.4 0.2 0.1 TA = 125C TA = 85C 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current July 2013 (c) Diodes Incorporated MMBT3906FA Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A3 A1 A X2-DFN0806-3 Dim Min Max Typ A 0.375 0.40 0.39 A1 0 0.05 0.02 A3 0.10 b 0.10 0.20 0.15 D 0.55 0.65 0.60 D1 0.35 0.45 0.40 E 0.75 0.85 0.80 E1 0.20 0.30 0.25 e 0.35 K 0.20 L 0.20 0.30 0.25 All Dimensions in mm Seating Plane D e L (2x) b (2x) K E E1 Pin#1 R0.075 D1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 Dimensions C X X1 X2 Y Y1 Y2 Y2 X (2x) Y (2x) Value (in mm) 0.350 0.200 0.450 0.550 0.375 0.475 1.000 C X2 MMBT3906FA Document number: DS36017 Rev. 1 - 2 6 of 7 www.diodes.com July 2013 (c) Diodes Incorporated MMBT3906FA IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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