MMBT3906FA
Document number: DS36017 Rev. 1 - 2 1 of 7
www.diodes.com July 2013
© Diodes Incorporated
MMBT3906FA
40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806
Features
BVCEO > -40V
I
C = -200mA high Collector Current
P
D = 435mW Power Dissipation
0.48mm2 package footprint, 16 times smaller than SOT23
0.4mm height package minimizing off-board profile
Complementary NPN Type MMBT3904FA
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu, Solderable per MIL-STD-202,
Method 208
Weight: 0.0008 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT3906FA-7B 3N 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as tho se which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a t http://www.diodes.com/products/packages.html.
Marking Information
3N
e4
C
E
B
C
E
B
3N = Product Type Marking Code
X2-DFN0806-3
Top View
Device Schematic
Bottom View Device Symbol
Top View
Bar Denotes Base
and Emitter Side
To
p
View
MMBT3906FA
Document number: DS36017 Rev. 1 - 2 2 of 7
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© Diodes Incorporated
MMBT3906FA
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -6.0 V
Continuous Collector Current IC -200 mA
Peak Pulse Collector Current ICM -500 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 435 mW
Thermal Resistance, Junction to Ambient (Note 5) R
JA 287 C/W
Thermal Resistance, Junction to Lead (Note 6) R
JL 150 C/W
Operating and Storage and Temperature Range TJ, TSTG -55 to +150 C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 200 V B
Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Thermal resistance from junctio n to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3906FA
Document number: DS36017 Rev. 1 - 2 3 of 7
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© Diodes Incorporated
MMBT3906FA
Thermal Characteristics and Derating Information
100m 1 10
10m
100m
100µs
Sin gle Pulse
Tamb=25°C
VCE(sat)
Limited
1ms
10ms
100ms
1s
DC
Safe O p erating A rea
- IC Coll ect or Current (A )
- VCE Col l ecto r - Emi tte r Vo lta g e (V) 0 20 40 60 80 100 120 140 160
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
Derating Curve
Temperatu re (°C)
Max Powe r Di ssipa tio n (W )
100µ 1m 10m 100m 1 10 100 1k
0
25
50
75
100
125
150
175
200
225
250
275
300 Tamb=25°C
Transient Thermal Im p ed ance
D=0.5
D=0.2
D=0.1
Sin gle Pulse
D=0.05
Therm al Resistance (°C/ W)
Pul se Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100 Single Pulse
Tamb=25°C
Pulse Power Dissipation
Pu ls e Width (s )
Maximum Power (W)
MMBT3906FA
Document number: DS36017 Rev. 1 - 2 4 of 7
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© Diodes Incorporated
MMBT3906FA
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO -40 V IC = -10µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 8) BVCEO -40 V IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO -6.0 V IE = -10µA, IC = 0
Collector Cutoff Current ICEX -50 nA
VCE = -30V, VEB(OFF) = -3.0V
Collector Cutoff Current ICBO -50 nA
VCB = -30V, IE = 0
Base Cutoff Current IBL -50 nA
VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 8)
DC Current Gain hFE
60
80
100
60
30
300
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage VCE(sat) -0.25
-0.40 V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage VBE(sat) -0.65
-0.85
-0.95 V IC = -10mA, IB = -1.0mA
IC =- 50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 4.5 pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 10 pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 2.0 12 k
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.1 10 x 10-4
Small Signal Current Gain hfe 100 400
Output Admittance hoe 3.0 60 µS
Current Gain-Bandwidth Product fT 300 MHz VCE = -20V, IC = -10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td 35 ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Rise Time tr 35 ns
Storage Time ts 225 ns
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Fall Time tf 75 ns
Note: 8. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
MMBT3906FA
Document number: DS36017 Rev. 1 - 2 5 of 7
www.diodes.com July 2013
© Diodes Incorporated
MMBT3906FA
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0
0.04
0.08
0.12
0.16
0.20
012 345
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 T ypical Collector Current
vs. Collec tor-Emitter Voltage
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
I = -2mA
B
I = -0.2mA
B
I = -0.4mA
B
I = -0.6mA
B
I = -0.8mA
B
I = -1.6mA
B
I = -1.4mA
B
I = -1.2mA
B
I = -1.8mA
B
I = -1mA
B
110100
-I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
0
50
100
150
200
250
300
350
400
h,
D
C
C
U
R
R
E
N
T
G
A
I
N
FE
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
V = 1V
CE
1101001,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
-V ,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURA TION
CE(SAT)
VOLTAGE ( V)
T = -55°C
A
I/I = 10
CB
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Collector-Emitter Saturation V oltage
vs. Collector Current
0.01
0.1
1
-V ,
C
O
LLE
C
T
O
R
-E
M
I
T
T
E
R
SATURATION
CE(SAT)
VOLT AGE (V)
T = -55°C
A
I/I = 20
CB
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig. 8 T y pical Base-Emitter Saturation Vo ltage
vs . Collector Cu r r ent
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
Gain = 1 0
0.1 1 10 100 1,000
-I , COLLECTOR CURRENT (mA)
C
Fig . 9 Typi cal Base-E m itter Saturatio n Vol t age
vs. C ollector Curr ent
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
Gain = 10
MMBT3906FA
Document number: DS36017 Rev. 1 - 2 6 of 7
www.diodes.com July 2013
© Diodes Incorporated
MMBT3906FA
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2-DFN0806-3
Dim Min Max Typ
A 0.375 0.40 0.39
A1 0 0.05 0.02
A3 - - 0.10
b 0.10 0.20 0.15
D 0.55 0.65 0.60
D1 0.35 0.45 0.40
E 0.75 0.85 0.80
E1 0.20 0.30 0.25
e - - 0.35
K - - 0.20
L 0.20 0.30 0.25
All Dimensions in mm
Dimensions Value
(in mm)
C 0.350
X 0.200
X1 0.450
X2 0.550
Y 0.375
Y1 0.475
Y2 1.000
X1
X2
Y2
Y1
Y (2x)
X (2x)
C
AA3
Seating Plane
A1
D
Eb (2x)
L (2x)
e
D1
E1 Pin#1
R0.075
K
MMBT3906FA
Document number: DS36017 Rev. 1 - 2 7 of 7
www.diodes.com July 2013
© Diodes Incorporated
MMBT3906FA
IMPORTANT NOTICE
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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failure of the life support device or to affect its safety or effectiveness.
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