VUB120-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 180 A I C25 = 155 A I FSM = 1100 A VCE(sat) = 2.05 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB120-16NOXT M1/O1 W5 W6 Backside: isolated S1 NTC U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 Features / Advantages: Applications: Package: V2-Pack Package with DCB ceramic base plate Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current NTC 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130603b VUB120-16NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current VR = 1600 V TVJ = 25C 100 A VR = 1600 V TVJ = 125C 2 mA TVJ = 25C 1.16 V 1.55 V 1.09 V VF IF = forward voltage drop min. 60 A typ. I F = 180 A IF = TVJ = 125 C 60 A I F = 180 A TC = 90C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 180 A TVJ = 150 C 0.81 V d= for power loss calculation only Ptot 1.59 T VJ = 150 C 4.4 m 0.6 K/W 0.2 K/W TC = 25C 205 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45C 6.05 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 5.89 kAs TVJ = 150 C 4.37 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 4.25 kAs 37 pF 20130603b VUB120-16NOXT Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25C 155 A TC = 80 C 108 A 500 W 2.35 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V TC = 25C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 100 A t d(on) turn-on delay time I C = 100 A; VGE = 15 V TVJ = 25C 2.05 TVJ = 125C 2.45 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25C inductive load 5.9 TVJ = 125C VGE = 15 V; R G = 6.8 short circuit safe operating area t SC short circuit duration VCE = 720 V; VGE = 15 V I SC short circuit current R G = 6.8 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 0.1 mA mA 0.1 nA 295 nC 70 ns 40 ns 250 ns 100 ns 8.5 mJ 11.5 mJ TVJ = 125C VCEK = 1200 V SCSOA 6.5 500 VCE = 600 V; IC = 100 A VGE = 15 V; R G = 6.8 5.4 V TVJ = 125C 300 A 10 s A 400 0.25 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 48 A TC = 80 C 32 A TVJ = 25C 2.75 V TVJ = 25C 0.25 mA TVJ = 125C 1 mA I F 80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 400 A/s t rr reverse recovery time IF = R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 600 V 30 A V 1.80 1.8 C 23 A 150 ns TVJ = 125C 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130603b VUB120-16NOXT Package Ratings V2-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 C -40 150 C 2.5 Nm Weight MD 76 2 mounting torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute XXXXXXXXXXXXX Logo UL terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage Part name Ordering Standard g 50/60 Hz, RMS; IISOL 1 mA yywwx Date code Prod. line Part Number VUB120-16NOXT Marking on Product VUB120-16NOXT Similar Part VUB120-16NOX Package V2-Pack Delivery Mode Box Quantity 6 Code No. 510461 Voltage class 1600 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25 B 25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 k K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 * on die level Rectifier Brake IGBT Brake Diode V 0 max threshold voltage 0.81 1.1 1.31 R 0 max slope resistance * 3.2 13.8 8 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved T VJ = 150 C 102 0 V m 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20130603b VUB120-16NOXT Outlines V2-Pack Marking M1/O1 W5 W6 S1 NTC U1/ W1 ~A6 ~E6 ~K6 M10/O10 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved W U S/T 10 10 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130603b VUB120-16NOXT Rectifier 200 900 160 800 120 IFSM 700 104 50Hz, 80% VRRM TVJ = 45C TVJ= 45C IF 2 [A s] [A] 600 80 50 Hz 0.8 x V RRM TVJ= 150C [A] TVJ = 150C T VJ = 150C 40 500 TVJ = 125C TVJ = 25C 0 0.5 1.0 400 0.001 1.5 103 0.01 0.1 2 1 1 3 2 Fig. 3 I t vs. time per diode Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current vs. voltage drop per diode 4 5 6 7 89 t [ms] t [s] VF [V] 100 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 Ptot 60 [W] 160 DC = 1 0.5 0.4 0.33 0.17 0.08 120 IFAVM 80 40 [A] 40 20 0 0 0 20 40 60 80 0 25 50 75 100 125 150 175 0 25 Tamb [C] IF(AV)M [A] 50 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 ZthJC 0.4 [K/W] Ri 0.060 ti 0.020 0.2 0.003 0.010 0.150 0.225 0.243 0.800 0.144 0.580 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130603b VUB120-16NOXT Brake IGBT 200 200 VGE = 15 V 150 200 13 V VGE = 15 V 17 V 19 V 11 V 160 150 120 TVJ = 125C TVJ = 25C 100 100 TVJ = 125C [A] 80 [A] [A] 9V 50 TVJ = 125C 50 40 TVJ = 25C 0 0 0 1 2 3 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 [V] [V] Fig. 1 Typ. output characteristics [V] Fig. 3 Typ. transfer characteristics Fig. 2 Typ. output characteristics 20 20 IC = 100 A VCE = 600 V 16 RG = 6.8 VCE = 600 V VGE = 15 V TVJ = 125C 16 15 IC = 100 A VCE = 600 V VGE = 15 V TVJ = 125C 14 12 12 E off 10 [mJ] [V] [mJ] 8 Eoff Eon 10 E on 5 4 0 8 0 0 100 200 300 400 6 0 40 80 120 160 200 4 8 12 16 [A] [nC] Fig. 4 Typ. turn-on gate charge 20 24 [] Fig. 6 Typ. switching energy versus gate resistance Fig. 5 Typ. switching energy versus collector current 0.3 10000 0.2 1000 [K/W] 0.1 1 2 3 4 0.0 0.001 Ri 0.05 0.035 0.12 0.045 ti 0.002 0.03 0.03 0.08 [] 100 0.01 0.1 1 (c) 2013 IXYS all rights reserved 0 25 50 75 100 125 150 [C] [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. 10 Fig. 8 Typ. thermistor resistance versus temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20130603b VUB120-16NOXT Brake Diode 80 5 60 TVJ = 125C VR = 800 V 70 50 4 IF = 60 A 30 A 15 A 60 50 [A] IF = 60 A 30 A 15 A 3 40 30 [C] TVJ = 125C 25C 30 40 [A] 2 20 20 1 0 0 1 2 0 100 3 TVJ = 125C VR = 800 V 10 10 0 10 00 0 200 400 [A/s] [V] 2.0 1000 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 220 120 TVJ = 125C VR = 800 V 1.5 IF = 60 A 30 A 15 A 180 1.2 TVJ = 125C IF = 30 A 100 200 1.0 800 [A/s] Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt Fig. 1 Typ. forward current IF vs. VF 600 [ns] 1.0 80 0.8 60 0.6 40 0.4 trr [s] [V] 160 IRM 0.5 140 QR 20 0.2 trr VFR 0.0 120 0 40 80 120 160 0 0 200 400 600 800 1000 [A/s] [C] Fig. 4 Typ. dynamic parameters Qr, IRM, versus TVJ 0 200 400 600 800 0.0 1000 [A/s] Fig. 5 Typ. recovery time trr vs. -diF /dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt 1.0 0.8 0.6 [K/W] i 0.2 Ri [K/W] 1 0.465 2 0.179 3 0.256 0.0 0.001 0 .0 1 0.1 ti [s] 0.0052 0.0003 0.0397 1 [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130603b