5-39
2–16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13736
36 micro-X Package
Features
• Low Noise Figure:
1.8␣ dB Typical at 12␣ GHz
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dB Typical at 12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available[1]
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NFOOptimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 1.5
f = 12.0 GHz dB 1.8 2.2
f = 14.0 GHz dB 2.1
GAGain @ NFO: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 11.5
f = 12.0 GHz dB 8.0 9.0
f = 14.0 GHz dB 7.0
P1 dB Power Output @ 1 dB Gain Compression: f =12.0 GHz dBm 17.5
VDS = 4 V, IDS = 40 mA
G1 dB 1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA f = 12.0 GHz dB 8.5
gmTransconductance: VDS = 2.5 V, VGS = 0 V mmho 25 55
IDSS Saturated Drain Current: VDS = 2.5 V, VGS = 0 V mA 40 50 90
VPPinch-off Voltage: VDS = 2.5 V, IDS = 1 mA V -4.0 -1.5 -0.5
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
Description
The ATF-13736 is a high perfor-
mance gallium arsenide Schottky-
barrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropri-
ate for use in the gain stages of
low noise amplifiers operating in
the 2-16 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
5965-8722E
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
5-40
ATF-13736 Typical Performance, TA = 25°C
ATF-13736 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
VDS Drain-Source Voltage V +5
VGS Gate-Source Voltage V -4
VGD Gate-Drain Voltage V -6
IDS Drain Current mA IDSS
PTPower Dissipation [2,3] mW 225
TCH Channel Temperature °C 175
TSTG Storage Temperature[4] °C -65 to +175
Thermal Resistance: θjc = 400°C/W; TCH = 150°C
Liquid Crystal Measurement: 1␣ µm Spot Size[5]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.5 mW/°C for
TCASE > 85°C.
4. Storage above +150°C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
ATF-13736-TR1 1000 7"
ATF-13736-STR 10 strip
FREQUENCY (GHz)
NF
O
(dB)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2.5 V, I
DS
= 20 mA.
FREQUENCY (GHz)
GAIN (dB)
2.0
1.5
1.0
0.5
0
16
14
12
10
8
6
G
A
(dB)
6.0 10.08.0 12.0 14.0 16.0
GA
NFO
|S21|2
MSG
MSG
MAG
2.0 4.0 6.0 8.0
10.0 12.0 16.0
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
V
DS
= 2.5V, I
DS
= 20 mA, T
A
= 25°C.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2.5 V, I
DS
= 20 mA.
FREQUENCY (GHz)
GAIN (dB)
|S21|2
MSG
MAG
2.0 4.0 6.0 8.0
10.0 12.0 16.0
25
20
15
10
5
0
ATF-13736 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Freq. NFOΓopt
GHz dB Mag Ang RN/50
4.0 1.1 .71 102 .10
6.0 1.3 .55 147 .07
8.0 1.5 .46 -144 .19
12.0 1.8 .50 -40 .88
14.0 2.1 .52 -2 1.17
5-41
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA=25°C, VDS = 2.5 V, IDS␣ =␣ 20 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
2.0 .94 -46 11.0 3.56 128 -26.4 .048 55 .59 -36
3.0 .86 -70 10.2 3.23 109 -25.2 .055 40 .57 -47
4.0 .84 -90 9.8 3.08 91 -23.1 .070 31 .56 -55
5.0 .77 -110 9.6 3.02 69 -20.9 .090 18 .52 -63
6.0 .68 -135 9.9 3.14 51 -19.3 .109 7 .47 -75
7.0 .59 -170 9.9 3.13 24 -18.0 .126 -12 .39 -92
8.0 .54 149 9.5 2.99 -1 -17.6 .132 -27 .30 -112
9.0 .56 112 8.8 2.75 -22 -16.9 .143 -43 .19 -121
10.0 .58 86 8.1 2.53 -43 -16.4 .152 -58 .11 -140
11.0 .60 63 7.6 2.41 -66 -16.5 .149 -73 .09 92
12.0 .64 39 7.0 2.24 -90 -17.1 .140 -81 .15 47
13.0 .68 20 6.4 2.08 -106 -17.6 .132 -90 .19 21
14.0 .70 9 6.0 1.99 -130 -18.0 .126 -97 .19 -3
15.0 .72 -1 5.2 1.83 -145 -18.2 .123 -111 .15 -26
16.0 .74 -17 4.6 1.70 -177 -18.4 .120 -129 .11 -34
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA=25°C, VDS =4 V, I
DS␣ =␣ 40 mA
Freq. S11 S21 S12 S22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
2.0 .88 -44 13.5 4.73 130 -26.4 .048 64 .67 -28
3.0 .76 -68 13.0 4.47 107 -24.9 .057 52 .61 -39
4.0 .68 -90 12.4 4.19 86 -22.5 .075 39 .57 -46
5.0 .56 -113 12.0 4.00 66 -21.0 .089 32 .52 -52
6.0 .42 -145 11.8 3.90 44 -19.8 .102 21 .44 -61
7.0 .37 161 11.5 3.74 20 -18.6 .117 9 .31 -75
8.0 .47 116 10.5 3.36 -3 -17.9 .128 -5 .17 -95
9.0 .57 90 9.4 2.96 -23 -17.2 .138 -19 .05 -143
10.0 .63 70 8.9 2.77 -41 -17.4 .135 -28 .06 128
11.0 .69 51 7.9 2.47 -63 -17.7 .131 -39 .17 100
12.0 .77 33 7.1 2.26 -82 -18.0 .126 -52 .26 75
13.0 .82 21 6.0 2.00 -101 -18.6 .118 -65 .35 62
14.0 .85 13 5.4 1.86 -117 -19.2 .110 -75 .39 54
15.0 .83 1 4.8 1.73 -134 -19.7 .104 -83 .41 49
16.0 .81 -17 4.4 1.65 -154 -19.8 .102 -103 .42 41
A model for this device is available in the DEVICE MODELS section.
5-42
36 micro-X Package Dimensions
13
4
2
SOURCE
SOURCE
DRAIN
GATE
2.15
(0.085) 2.11 (0.083) DIA.
0.508
(0.020)
2.54
(0.100)
4.57 ± 0.25
0.180 ± 0.010
0.15 ± 0.05
(0.006 ± 0.002)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
0.56
(0.022)
1.45 ± 0.25
(0.057 ± 0.010)
137
