SIGC06T60
Edited by INFINEON Technologies AI PS DD HV3, L7511A, Edition 2, 27.01.2005
IGBT3 Chip
This chip is used for:
• power module
• discrete components
FEATURES:
• 600V Trench & Field Stop technology
• low VCE(sat)
• low turn-off losses
• short tail current
• positive temperature coefficient
• easy paralleling
Applications:
• drives
• white goods
• resonant applications
G
C
E
Chip Type VCE ICn Die Size Package Ordering Code
SIGC06T60 600V 10A 2.42 x 2.38 mm2 sawn on foil Q67050-
A4331-A101
MECHANICAL PARAMETER:
Raster size 2.42 x 2.38
Emitter pad size 1.672 x 1.691
Gate pad size 0.266 x 0.266
mm2
Area total / active 5.8 / 3.6 mm2
Thickness 70 µm
Wafer size 150 mm
Flat position 0 deg
Max. possible chips per wafer 2591 pcs
Passivation frontside Photoimide
Emitter metallization 3200 nm AlSiCu
Collector metallization 1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, <500µm
Reject ink dot size ∅ 0.65mm ; max 1.2mm
Recommended storage environment store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
SIGC06T60
Edited by INFINEON Technologies AI PS DD HV3, L7511A, Edition 2, 27.01.2005
MAXIMUM RATINGS:
Parameter Symbol Value Unit
Collector-emitter voltage, Tj= 25 °C VCE 600 V
DC collector current, limited by Tjmax IC 1 ) A
Pulsed collector current, tp limited by Tjmax Icpuls 30 A
Gate emitter voltage VGE ±20 V
Operating junction and storage temperature Tj, Tstg -40 ... +175 °C
Tvj = 150°C 6
SC data, VGE = 15V, VCC = 360V Tvj = 25°C tp 8 µs
1 ) depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified
Value
Parameter Symbol Conditions min. typ. max. Unit
Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC= 2mA 600
Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=10A 1.1 1.5 1.9
Gate-emitter threshold voltage VGE(th) IC=150µA , VGE=VCE 5.0 5.8 6.5
V
Zero gate voltage collector current ICES VCE=600V , VGE=0V 0.6 µA
Gate-emitter leakage current IGES VCE=0V , VGE=20V 300 nA
Integrated gate resistor RGint none Ω
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Value
Parameter Symbol Conditions min. typ. max. Unit
Input capacitance Ciss 551
Output capacitance Coss 40
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz 17
pF
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
Value 2)
Parameter Symbol Conditions min. typ. max. Unit
Turn-on delay time td(on) 12
Rise time tr 10
Turn-off delay time td(off) 100
Fall time tf
Tj=125°C
VCC=300V,
IC=10A,
VGE=-15/15V,
RG= 27Ω 85
ns
2) values also influenced by parasitic L- and C- in measurement and package.
SIGC06T60
Edited by INFINEON Technologies AI PS DD HV3, L7511A, Edition 2, 27.01.2005
CHIP DRAWING:
SIGC06T60
Edited by INFINEON Technologies AI PS DD HV3, L7511A, Edition 2, 27.01.2005
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
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characteristics.
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regarding circuits, descriptions and charts stated herein.
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