VOS617B
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Rev. 1.2, 06-Nov-15 1Document Number: 84270
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Optocoupler, Phototransistor Output, Low Input Current,
SSOP-4, Half Pitch, Mini-Flat Package
DESCRIPTION
The VOS617B series has a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a 4-pin
50 mil lead pitch mini-flat package.
It features a high current transfer ratio at low input current,
low coupling capacitance, and high isolation voltage.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
FEATURES
High CTR with low input current
SSOP low profile package (half pitch)
High collector emitter voltage, VCEO = 80 V
Isolation test voltage = 3750 VRMS
Low coupling capacitance
High common mode transient immunity
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Telecom
Industrial controls
Battery powered equipment
Office machines
Programmable controllers
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is VOS617B. This model number should be
used when consulting safety agency documents.
UL1577, file no. E76222, double protection
cUL, accordance to CSA component acceptance service
no. 5A, double protection
DIN EN 60747-5-5 (VDE 0884-5), available with option 1
FIMKO EN 60950-1
CQC GB4943.1-2011 and GB8898-2011 (suitable for
installation altitude below 2000 m)
Note
Additional options may be possible, please contact sales office.
E
CA
C
1
2
4
3
22628-1
ORDERING INFORMATION
VOS617B-#X001 T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY
CERTIFIED/PACKAGE
CTR (%)
5 mA
UL, cUL, FIMKO, CQC 50 to 600 63 to 125 100 to 200 160 to 320 80 to 160 130 to 260 200 to 400
SSOP-4, 50 mil pitch - VOS617B-2T VOS617B-3T VOS617B-4T VOS617B-7T - VOS617B-9T
UL, CUL, FIMKO,
CQC, VDE (option 1) 50 to 600 63 to 125 100 to 200 160 to 320 80 to 160 130 to 260 200 to 400
SSOP-4, 50 mil pitch VOS617B-
X001T
VOS617B-
2X001T
VOS617B-
3X001T
VOS617B-
4X001T
VOS617B-
7X001T
VOS617B-
8X001T
VOS617B-
9X001T
SSOP-4
5 mm
VOS617B
www.vishay.com Vishay Semiconductors
Rev. 1.2, 06-Nov-15 2Document Number: 84270
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices.
Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Maximum Forward Current vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
Power dissipation Pdiss 100 mW
Forward current IF60 mA
Surge forward current tp 10 μs IFSM 1.5 A
Junction temperature Tj125 °C
OUTPUT
Collector emitter voltage VCEO 80 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Power dissipation Pdiss 150 mW
Junction temperature Tj125 °C
COUPLER
Total power dissipation Ptot 250 mW
Storage temperature range Tstg -55 to +150 °C
Ambient temperature range Tamb -55 to +110 °C
Soldering temperature (1) t = 10 s Tsld 260 °C
0
50
100
150
200
250
300
0 120
P
tot
- Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
10080604020
Coupled device
Phototransistor
IR diode
0
10
20
30
40
50
70
-25 0 25 50 75 100 125
I
F
- Maximum Forward Current (mA)
T
amb
- Ambient Temperature (°C)
60
VOS617B
www.vishay.com Vishay Semiconductors
Rev. 1.2, 06-Nov-15 3Document Number: 84270
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Fig. 3 - Test Circuit Fig. 4 - Test Circuit and Waveforms
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 5 mA VF- 1.18 1.5 V
Reverse current VR = 6 V IR-0.011A
Capacitance VR = 0 V, f = 1 MHz CI-7.3-pF
OUTPUT
Collector emitter leakage current VCE = 10 V ICEO - 0.3 100 nA
Collector emitter breakdown voltage IC = 100 μA BVCEO 80 - - V
Emitter collector breakdown voltage IE = 10 μA BVECO 7--V
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE -5-pF
COUPLER
Collector emitter saturation voltage IF = 5 mA, IC = 2.5 mA VCEsat - 0.25 0.4 V
Cut-off frequency IF = 10 mA, VCC = 5 V, RL = 100 Ωfctr - 155 - kHz
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IFIF = 5 mA, VCE = 5 V
VOS617B CTR 50 - 600 %
VOS617B-2 CTR 63 - 125 %
VOS617B-3 CTR 100 - 200 %
VOS617B-4 CTR 160 - 320 %
VOS617B-7 CTR 80 - 160 %
VOS617B-8 CTR 130 - 260 %
VOS617B-9 CTR 200 - 400 %
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
Rise and fall time
IC = 2 mA, VCC = 5 V,
RL = 100 Ω
tr-3-μs
Fall time tf-3-μs
Turn-on time ton -6-μs
Turn-off time toff -4-μs
SATURATED
Rise and fall time
IF = 1.6 mA, VCC = 5 V,
RL = 1.9 kΩ
tr-3-μs
Fall time tf-12-μs
Turn-on time ton -4-μs
Turn-off time toff -18-μs
isfh618a_10
Input
VOUT
VCC = 5 V
RL
isfh618a_12
10 %
90 %
Input pulse
Output pulse
tr
ton
tf
toff
VOS617B
www.vishay.com Vishay Semiconductors
Rev. 1.2, 06-Nov-15 4Document Number: 84270
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 5 - Forward Voltage vs. Forward Current Fig. 6 - Collector Current vs. Collector Emitter Voltage
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Climatic classification (according to IEC 68 part 1) 55/110/21
Comparative tracking index CTI 175
Maximum rated withstanding isolation voltage 40 % to 60 % RH, AC test of 1 min VISO 3750 VRMS
Maximum transient isolation voltage VIOTM 6000 V
Maximum repetitive peak isolation voltage VIORM 707 V
Insulation resistance VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Isolation resistance (under fault conditions) VIO = 500 V, Tamb = TSI RIO 109Ω
Output safety power PSO 350 mW
Input safety current ISI 200 mA
Input safety temperature TSI 175 °C
Apparent charge test voltage (method A) VIORM x 1.6 = VPR, type and sample test
tm = 60 s, partial discharge < 5 pC VPR 1132 Vpeak
Apparent charge test voltage (method B) VIORM x 1.875 = VPR, 100 % production
test with tm = 1 s, partial discharge < 5 pC VPR 1326 Vpeak
Creepage distance 5mm
Clearance distance 5mm
Insulation thickness DTI 0.4 mm
Environment (pollution degree in accordance to DIN VDE 0109) 2
0.1
1
10
100
0.6 0.8 1.0 1.2 1.4 1.6
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tamb = 110 °C
Tamb = 75 °C
Tamb = 25 °C
Tamb = 0 °C
Tamb = -55 °C
0
5
10
15
20
25
30
35
40
45
50
55
0 1 2 3 4 5 6 7 8 9 10
IC - Collector Current (mA)
VCE - Collector Emitter Voltage (non-sat) (V)
IF = 30 mA
IF = 35 mA
IF = 1 mA
IF = 20 mA
IF = 15 mA
IF = 10 mA
IF = 5 mA
IF = 25 mA
VOS617B
www.vishay.com Vishay Semiconductors
Rev. 1.2, 06-Nov-15 5Document Number: 84270
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Leakage Current vs. Ambient Temperature
Fig. 8 - Collector Current vs. Collector Emitter Voltage
Fig. 9 - Normalized Current Transfer Ratio (non-saturated) vs.
Ambient Temperature
Fig. 10 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature
Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature
Fig. 12 - Normalized CTR (non-saturated) vs. Forward Current
0.001
0.01
0.1
1
10
100
1000
10 000
I
CE0
- Leakage Current (nA)
T
amb
- Ambient Temperature (°C)
IF= 0 mA
VCE = 40 V
VCE = 24 V
VCE = 12 V
-60 -40 -20 0 20 40 60 80 120100
0
2
4
6
8
10
12
14
00.10.20.30.4
IC- Collector Current (mA)
VCE - Collector Emitter Voltage (V)
IF= 1 mA
IF= 10 mA
IF= 5 mA
IF= 2 mA
0
0.2
0.4
0.6
0.8
1.0
1.2
NCTR - Normalized CTR (non-saturated)
Tamb - Ambient Temperature (°C)
Normalized to CTR value:
IF = 5 mA, VCE = 5 V, Tamb = 25 °C
IF = 5 mA
-60 -40 -20 0 20 40 60 80 120100
0
0.2
0.4
0.6
0.8
1.0
1.2
NCTR - Normalized CTR (sat)
Tamb - Ambient Temperature (°C)
IF= 5 mA
Normalized to CTR value:
IF= 5 mA, VCE = 5 V, Tamb = 25 °C
-60 -40 -20 0 20 40 60 80 120100
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
VCEsat - Collector Emitter Voltage (V)
Tamb - Ambient Temperature (°C)
Ic = 1 mA
Ic = 2 mA
Ic = 5 mA
IF = 10 mA
-60 -40 -20 0 20 40 60 80 120100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1 1 10 100
NCTR - Normalized CTR (NS)
IF- Forward Current (mA)
Tamb = 0 °C
Tamb = 100 °C
Tamb = 75 °C
Tamb = -55 °C
Tamb = 25 °C
Normalized to:
IF = 5 mA, VCE = 5 V,
Tamb = 25 °C
VOS617B
www.vishay.com Vishay Semiconductors
Rev. 1.2, 06-Nov-15 6Document Number: 84270
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Normalized CTR (saturated) vs. Forward Current
Fig. 14 - FCTR vs. Phase Angle
Fig. 15 - FCTR vs. Collector Current
Fig. 16 - Switching Time vs. Load Resistance
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1 1 10 100
NCTR - Normalized CTR (sat)
IF- Forward Current (mA)
VCE = 0.4 V
Normalized to:
IF= 5 mA,
VCE = 5 V,
Tamb = 25 °C
Tamb = 0 °C
T= 75 °C
Tamb = -55 °C-
Tamb = 25 °C
Tamb = 100 °C
amb
-160
-140
-120
-100
-80
-60
-40
-20
0
1 10 100 1000
Phase Angle (deg)
f - Frequency (kHz)
VCE = 5 V
RL = 100 Ω
RL = 1000 Ω
1
10
100
1000
0.1 1 10 100
FCTR (kHz)
IC (mA)
VCC = 5 V
0.1
1
10
100
1000
0 5 10 15 20
ton, toff Switching Time (μs)
RL - Load Resistance (kΩ)
toffs)
tons)
VCE = 5 V, IC = 2 mA
VOS617B
www.vishay.com Vishay Semiconductors
Rev. 1.2, 06-Nov-15 7Document Number: 84270
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS (in millimeters)
PACKAGE MARKING (example of VOS617B-3X001T)
Notes
Option 1 is reflected with letter “X”.
Tape and reel suffix (T) is not part of the package marking.
V YWW 68
617B3X
Pin 1 dimple
VOS617B
www.vishay.com Vishay Semiconductors
Rev. 1.2, 06-Nov-15 8Document Number: 84270
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGING INFORMATION (TAPE AND REEL) (in millimeters)
Fig. 17 - Tape and Reel Shipping Medium
Fig. 18 - Tape and Reel Packing (3000 parts per reel)
SOLDER PROFILES
Fig. 19 - Lead (Pb)-free Reflow Solder Profile According to
J-STD-020 for SMD Devices
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020
Top cover tape
Embossment
Embossed carrier
17998
7.5 ± 0.1
1.75 ± 0.1
16 ± 0.3
8 ± 0.1
2.95 ± 0.1 1.6 ± 0.1
Pin 1
2 ± 0.1 4 ± 0.1 1.55 ± 0.05
7.4 ± 0.1
0.3 ± 0.05
7.4 ± 0.1
4.4
2.6 ± 0.1
2.2 ± 0.1
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
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Revision: 02-Oct-12 1Document Number: 91000
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