Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Sym Parameter Value Units
Tstg Storage Temperature -65 to +200 OC
TJOperating Junction Temperature -65 to +200 OC
PDTotal Power Dissipation at TA = 25OC 500 mW
Linear Derating Factor from TA = 25OC 3.33 mW/OC
ROJA Thermal Resistance Junction-to-Ambient 350 OC/W
Wiv Working Inverse Voltage 150 V
IOAverage Rectified Current 200 mA
IFDC Forward Current (IF) 500 mA
ifRecurrent Peak Forward Current 600 mA
iF(surge) Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second 1.0 Amp
Pulse Width = 1.0 microsecond 4.0 Amp
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
BAV102
Electrical Characteristics TA = 25OC unless otherwise noted
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVBreakdown Voltage 200 VIR=100 uA
IRReverse Leakage 100 nA VR=150 V
100 uA VR=150 V TA = 150OC
VFForward Voltage 1.00 V IF=100 mA
1.25 V IF=200 mA
CTCapacitance 5.0 pF VR= 0.0 V,f = 1.0 MHz
TRR Reverse Recovery Time 50 ns IF= IR 30 mA IRR= 1.0 mA
RL = 100 Ohms
High Voltage,
General Purpose Diode
© 1997 Fairchild Semiconductor Corporation
General Description:
A General Purpose diode that couples high forward
conductance fast switching speed and high blocking
voltages in a glass leadless LL-34 Surface Mount
package.
Placement of the Expansion Gap has no relationship to
the location of the Cathode Terminal which is indicated
by the first color band.
RED
GREEN
Expansion Gap
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
LL-34
JEDEC (AC VERSION)
Fairchild Semiconductor's Criteria
5-MAR-98
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF
THE CATHODE TERMINAL OF THE DEVICE. THE EXPANSION GAP & CATHODE BAND CAN BE
ON THE SAME TERMINAL OR AT OPPOSITE TERMINALS OF THE DIODE.
0.059 (1.499)
0.055 (1.397)
0.138 (3.505)
0.130 (3.302)
0.020 (0.50)
0.014 (0.35)
0.104 (2.64)
REFERENCE
TERMINALS:
DUMET (ALLOY 47)
GLASS SLEEVE
EXPANSION GAP
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OPTOPLANAR™
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