© 2000
MOS FIEL D EFFECT TRANSI STO R
2SK3454
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D14756EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP (K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ★ shows major revised points.
DESCRIPTION
The 2SK3454 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter.
FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.63 Ω MA X. (VGS = 10 V, ID = 4.0 A)
•Low input capacitance
Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
•Built-in gate protect ion dio de
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C )
Drain to Source Voltage (VGS = 0 V) VDSS 250 V
Gate to Source Voltage (VDS = 0 V) VGSS ±30 V
Drain Current(DC) (TC = 25°C) ID(DC) ±7.0 A
Drain Current(pulse) Note1 ID(pulse) ±21 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W
Total Power Dissipation (TC = 25°C) PT2 30 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 7.0 A
Single Avalanche Energy Note2 EAS 49 mJ
Notes1. PW ≤ 10
µ
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω , VGS = 20 V→0 V
ORDERING INFORMATION
PART NUMBE R PACKA GE
2SK3454 Isolated TO-220
Data Sheet D14756EJ2V0DS
2
2SK3454
ELECTRICAL CHARA CTERISTICS (TA = 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
Drain Leakage Current IDSS VDS = 250 V, VGS = 0 V 100
µ
A
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10
µ
A
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V
Forward Transfer Admittance | yfs |V
DS = 10 V, ID = 4.0 A 1.0 S
Drain to Source On-st ate Resi stance RDS(on) VGS = 10 V, ID = 4.0 A 0.5 0.63 Ω
Input Capacit ance Ciss VDS = 10 V 400 pF
Output Capacit ance Coss VGS = 0 V 110 pF
Reverse Transf er Capacitance Crss f = 1 MHz 55 pF
Turn-on Delay Time Td(on) VDD = 125 V, ID = 4.0 A 11 ns
Rise Time TrVGS(on) = 10 V 18 ns
Turn-off Del a y Tim e Td(off) RG = 10 Ω32 ns
Fall Time Tf15 ns
Total Gate Charge QGVDD = 200 V 18 nC
Gate to Source Charge QGS VGS = 10 V 3.5 nC
Gate to Drain Charge QGD ID = 7.0 A 10 nC
Diode Forward Voltage VF(S-D) IF = 7.0 A, VGS = 0 V 1. 0 V
Reverse Recovery T ime Trr IF = 7.0 A, VGS = 0 V 250 ns
Reverse Recovery Charge Qrr di/dt = 50 A/
µ
s1.0
µ
C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω
50 Ω
PG.
L
VDD
VGS = 20 → 0 V
BVDSS
IAS
IDVDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. RG
0
VGS
D.U.T.
RL
VDD
τ = 1
s
µ
Duty Cycle ≤ 1%
VGS
Wave Form
ID
Wave Form
VGS
10% 90%
VGS(on)
10%
0
ID
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
ID
0
t
on toff
PG. 50 Ω
D.U.T.
RL
VDD
IG = 2 mA
Data Sheet D14756EJ2V0DS 3
2SK3454
TYPICAL CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
0040 503010 60
20
30
20 Pulsed
V
GS
=10 V
10
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
Pulsed
048
12 16 20
V
DS
= 10 V
10
1
0.1
0.01
0.001
0.0001
100
T
ch
= −25˚C
25˚C
75˚C
125˚C
150˚C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - ˚C
V
GS(off)
- Gate to Source Cut-off Voltage - V
V
DS
= 10 V
I
D
= 1 mA
1
2
3
4
5
−50 0 50 100 150
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Pulsed
V
DS
= 10 V
| y
fs
| - Forward Transfer Admittance - S
I
D
- Drain Current - A
1010.01 0.1
0.1
0.01
1
10
100
T
ch
= 150˚C
125˚C
75˚C
25˚C
−25˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - Ω
01051520
2
3
0
1
Pulsed
I
D
= 7.0 A
4.0 A
1.4 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - Ω
1
1010.1
2
100
Pulsed
0
V
GS
= 10 V
Data Sheet D14756EJ2V0DS
4
2SK3454
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-state Resistance - Ω
0
−50
1
0.5
050 100 150
2
1.5
4.0 A
VGS = 10 V
Pulsed
ID = 7.0 A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
10
100
1000
10000
1 10 1000100
VGS = 0 V
f = 1 MHz
C
oss
C
rss
C
iss
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
SD
- Diode Forward Current - A
t
rr
- Reverse Recovery Time - ns
di/dt = 50 A/ s
VGS = 0 V
1
0.1
10
1 10 100
1000
100
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
Q
G
- Gate Charge - nC
V
DS
- Drain to Source Voltage - V
0010 15520
100
50
150
200
250
4
2
0
8
6
V
DS
14
12
10
V
GS
I
D
= 7.0 A
V
DD
= 200 V
125 V
50 V
Data Sheet D14756EJ2V0DS 5
2SK3454
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
ch
- Channel Temperature -
˚C
dT - Percentage of Rated Power - %
04020 60
100
14080 120 160
0
20
40
60
80
100
TC - Case Temperature - ˚C
PT - Total Power Dissipation - W
008020 40 60 100 140120 160
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10
20
30
40
FORWARD BIAS SAFE OPERATING AREA
1 10 1000100
ID - Drain Current - A
0.1
VDS - Drain to Source Voltage - V
100
10
1
P ower Dissipation Limited
100 µs
100 ms
1 ms
3 ms
10 ms
PW
=
10 µs
DC
ID(DC)
I
D(pulse)
T
C
= 25˚C
Single Pulse
R
DS(on)
Limited
(@VGS = 10 V)
PW - Pulse Width - sec
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance - ˚C/W
10
0.01
0.1
1
100
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
R
th(ch-C)
= 4.17˚C/W
µµ
R
th(ch-A)
= 62.5˚C/W
★
★
Data Sheet D14756EJ2V0DS
6
2SK3454
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - mH
I
AS
- Single Avalanche Current - A
1
10
100
110
V
DD
= 125
V
V
GS
= 20
V
→
0 V
R
G
= 25
Ω
Starting Tch = 25°C
I
AS
= 7.0
A
0.01 0.1
0.1
E
AS
=
49
mJ
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50 75 100
120
100
80
60
40
20
0
125 150
VDD = 125 V
RG = 25 Ω
VGS = 20
V
→
0 V
IAS ≤ 7.0 A
Data Sheet D14756EJ2V0DS 7
2SK3454
PACKAGE DRAWING (Unit: mm)
Isol ated TO-220 (MP-45 F)
1.Gate
2.Drain
3.Source
10.0±0.3 3.2±0.2
φ
15.0±0.3
3±0.1
12.0±0.213.5 MIN.
4±0.2
0.7±0.1 1.3±0.2
1.5±0.2
2.54 TYP.2.54 TYP.
123
2.5±0.1
0.65±0.1
4.5±0.22.7±0.2
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
EQUIVALENT CIRCUIT
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
2SK3454
M8E 00. 4
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