PD - 96072A IRF7313UPbF HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Description VDSS = 30V RDS(on) = 0.029 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Symbol Maximum VDS VGS 30 20 6.5 5.2 30 2.5 2.0 1.3 82 4.0 0.20 5.8 -55 to + 150 ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Units V A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient www.irf.com Symbol Limit Units RJA 62.5 C/W 1 09/14/06 IRF7313UPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.022 --- V/C Reference to 25C, ID = 1mA 0.023 0.029 VGS = 10V, ID = 5.8A 0.032 0.046 VGS = 4.5V, ID = 4.7A --- --- V VDS = VGS, ID = 250A 14 --- S VDS = 15V, ID = 5.8A --- 1.0 VDS = 24V, VGS = 0V A --- 25 VDS = 24V, VGS = 0V, TJ = 55C --- 100 VGS = 20V nA --- -100 VGS = -20V 22 33 ID = 5.8A 2.6 3.9 nC VDS = 15V 6.4 9.6 VGS = 10V, See Fig. 10 8.1 12 VDD = 15V 8.9 13 ID = 1.0A ns 26 39 R G = 6.0 17 26 R D = 15 650 --- VGS = 0V 320 --- pF VDS = 25V 130 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- 2.5 --- --- 30 --- 0.78 --- 45 --- 58 1.0 68 87 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, IF = 1.7A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 10mH RG = 25, IAS = 4.0A. 2 ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. www.irf.com IRF7313UPbF 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 20s PULSE WIDTH TJ = 25C A 1 0.1 1 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 0.1 10 Fig 1. Typical Output Characteristics 10 Fig 2. Typical Output Characteristics 100 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) TJ = 25C TJ = 150C 10 VDS = 10V 20s PULSE WIDTH 1 3.0 3.5 4.0 4.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 5.0 TJ = 150C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 A 1.6 V SD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS (on) , Drain-to-Source On Resistance () IRF7313UPbF ID = 5.8A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 0.040 0.032 0.028 0.024 0 0.08 0.06 I D = 5.8A 0.04 0.02 0.00 12 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 15 A E AS , Single Pulse Avalanche Energy (mJ) RDS (on) , Drain-to-Source On Resistance () 0.10 9 20 30 40 A Fig 6. Typical On-Resistance Vs. Drain Current 0.12 6 10 I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature 3 V GS = 10V 0.020 80 100 120 140 160 TJ , Junction Temperature ( C) 0 V GS = 4.5V 0.036 200 TOP BOTTOM 160 IDD 1.8A 3.2A 4.0A 120 80 40 0 25 50 75 100 125 A 150 Starting TJ , Junction Temperature (C) Fig 8. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7313UPbF 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 900 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1200 Ciss Coss 600 Crss 300 0 1 10 100 A ID = 5.8A VDS = 15V 16 12 8 4 0 0 10 20 30 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7313UPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 8X b 0.25 [.010] A A1 MAX .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC e1 6X MILLIMETERS MIN A E INCHES DIM B .025 BASIC 1.27 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 C y 0.10 [.004] C A B 8X L 8X c 7 FOOTPRINT NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking 6 www.irf.com IRF7313UPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2006 www.irf.com 7