IRF7313UPbF
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Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V
trr Reverse Recovery Time ––– 45 68 ns TJ = 25°C, IF = 1.7A
Qrr Reverse RecoveryCharge ––– 58 87 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– 30
2.5
A
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.023 0.029 VGS = 10V, ID = 5.8A
––– 0.032 0.046 VGS = 4.5V, ID = 4.7A
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance ––– 14 ––– S VDS = 15V, ID = 5.8A
––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
QgTotal Gate Charge ––– 22 33 ID = 5.8A
Qgs Gate-to-Source Charge ––– 2.6 3.9 nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.4 9.6 VGS = 10V, See Fig. 10
td(on) Turn-On Delay Time ––– 8.1 12 VDD = 15V
trRise Time ––– 8.9 13 ID = 1.0A
td(off) Turn-Off Delay Time ––– 26 39 RG = 6.0Ω
tfFall Time ––– 17 26 RD = 15Ω
Ciss Input Capacitance ––– 650 ––– VGS = 0V
Coss Output Capacitance ––– 320 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 10mH
RG = 25Ω, IAS = 4.0A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.