V
RRM
= 200 V - 1400 V
I
F
=150 A
Features
• High Surge Capability DO-8 Package
• Types up to 1400 V V
RRM
Parameter Symbol 1N4594(R) 1N4595(R) Unit
Re
p
etitive
p
eak reverse volta
g
eV
RRM
1000 1200 V
1N4596(R)
1400
1N4594(R) thru 1N4596(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
2
1
1
2
2
1
2
1
Standard"R"Orientation
pp g
DC blocking voltage V
DC
1000 1200 V
Continuous forward current I
F
150 150 A
I
2
t for fusing I
2
t60 Hz Half wave 37200 37200 A
2
sec
Operating temperature T
j
-60 to 200 -60 to 200 °C
Storage temperature T
stg
-60 to 200 -60 to 200 °C
Parameter Symbol 1N4594(R) 1N4595(R) Unit
Diode forward voltage 1.5 1.5
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.35 0.35 °C/W
-60 to 200
-60 to 200
1N4596(R)
1.5
3.5
1400
150
3000
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current I
R
V
R
= V
RRM
, T
j
= 110 °C 4.5 4 mA
0.35
I
F
= 150 A, T
j
= 110 °C
T
C
≤ 110 °C
Conditions
3000 3000 A
V
F
37200
T
C
= 25 °C, t
p
= 8.3 ms
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1N4588(R) thru 1N4595(R)
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