1N4594(R) thru 1N4596(R) Silicon Standard Recovery Diode VRRM = 200 V - 1400 V IF =150 A Features * High Surge Capability * Types up to 1400 V VRRM DO-8 Package "R" Orientation Standard 2 2 2 1 1 2 1 1 Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) 1N4594(R) 1N4595(R) 1N4596(R) Unit VRRM 1000 1200 1400 V VDC 1000 1200 1400 V A Parameter Symbol Repetitive p p peak reverse voltage g DC blocking voltage Conditions Continuous forward current IF TC 110 C 150 150 150 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 3000 3000 3000 A I2t for fusing Operating temperature Storage temperature I2 t Tj Tstg 60 Hz Half wave 37200 -60 to 200 -60 to 200 37200 -60 to 200 -60 to 200 37200 -60 to 200 -60 to 200 A2sec C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions 1N4594(R) 1N4595(R) 1N4596(R) Unit Diode forward voltage VF IF = 150 A, Tj = 110 C 1.5 1.5 1.5 V Reverse current IR VR = VRRM, Tj = 110 C 4.5 4 3.5 mA 0.35 0.35 0.35 C/W Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 1N4588(R) thru 1N4595(R) www.genesicsemi.com 2 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: GeneSiC Semiconductor: 1N4594 1N4594R 1N4595 1N4595R 1N4596 1N4596R