©
1993
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK134B
FEATURES
• High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz)
• Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)
• Suitable for use as RF amplifier in UHF TV tuner.
• Automatically Mounting : Embossed Type Taping
• Surface Mount Package : 4 Pins Mini Mold (EIAJ: SC-61)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8 (±10)*1 V
Gate2 to Source Voltage VG2S ±8 (±10)*1 V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current ID25 mA
Total Power Dissipation PD200 mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1 : RL ≥ 10 kΩ
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
fields.
RF AMP. FOR UHF TV TUNER
N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
PACKAGE DIMENSIONS
(Unit : mm)
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
2.9±0.2
2.8
– 0.3
+0.2
1.5
– 0.1
+0.2
(1.8)
0.85 0.95
0.6
– 0.05
+0.1
0.4
– 0.05
+0.1
0.4
– 0.05
+0.1
0.4
– 0.05
+0.1
(1.9)
12
43
5
o
5
o
5
o
5
o
0.8
1.1
– 0.1
+0.2
0.16
– 0.05
+0.1
0 to 0.1
Document No. P10566EJ2V0DS00 (2nd edition)
(Previous No. TD-2398)
Date Published August 1995 P
Printed in Japan
3SK134B
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSX 18 V VG1S = VG2S = –2 V, ID = 10
µ
A
Drain Current IDSX 0.4 8.0 mA VDS = 10 V, VG2S = 4 V, VG1S = 0.5 V
Gate1 to Source Cutoff Voltage VG1S(off) –2.0 V VDS = 10 V, VG2S = 4 V, ID = 10
µ
A
Gate2 to Source Cutoff Voltage VG2SS(off) –0.7 V VDS = 10 V, VG1S = 4 V, ID = 10
µ
A
Gate1 Reverse Current IG1SS ±20 nA VDS = VG2S = 0, VG1S = ±8 V
Gate2 Reverse Current IG2SS ±20 nA VDS = VG1S = 0, VG2S = ±8 V
Forward Transfer Admittance |yfs| 25.0 29.0 35.0 mS VDS = 10 V, VG2S = 4 V, ID = 10 mA
f = 1 kHz
Input Capacitance Ciss 1.5 2.5 3.5 pF VDS = 10 V, VG2S = 4 V, ID = 10 mA
Output Capacitance Coss 0.6 1.1 1.6 pF f = 1 MHz
Reverse Transfer Capacitance Crss 0.02 0.03 pF
Power Gain Gps 20.0 23.0 dB VDS = 10 V, VG2S = 4 V, ID = 10 mA
Noise Figure NF 2.4 3.5 dB f = 900 MHz
IDSX Classification
Rank U55/UEE U56/UEF
Marking U55 U56
IDSX (mA) 0.4 to 5.0 3.0 to 8.0
3SK134B
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
– Ambient Temperature – °C
|y
fs
| – Forward Transfer Admittance – mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
– Drain Current – mA
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
– Gate2 to Source Voltage – V
C
iss
– Input Capacitance – pF
P
D
– Total Power Dissipation – mW
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
V
DS
– Drain to Source Voltage – V
I
D
– Drain Current – mA
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
510 15 20
20
25
15
10
5
1.0 2.0
–1.0 02.0 4.0 5.0
025 50 100 125
75
DRAIN CURRENT vs
GATE1 TO SOURCE VOLTAGE
V
G1S
– Gate1 to Source Voltage – V
I
D
– Drain Current – mA
01.0 2.0
20
10
V
G1S
– Gate1 to Source Voltage – V
0
30
40
20
10
1.0 3.0
0
4.0
5.0
2.0
1.0
3.0
|y
fs
| – Forward Transfer Admittance – mS
0
40
20
10
30
412 20816
100
200
I
D
= 10 mA
(at V
DS
= 10 V
V
G2S
= 4 V)
f = 1 MHz
V
G2S
= 4 V
1.1 V
1.0 V
0.9 V
0.8 V
V
G1S
= 1.2 V
V
DS
= 10 V
f = 1 kHz
1 V
2 V
3 V 4 V
V
G2S
= 5 V
4 V 3 V
2 V 1 V
V
DS
= 10 V V
G2S
= 5 V
V
DS
= 10 V
f = 1 kHz V
G2S
= 4 V
300
400 Free air
3SK134B
4
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
C
oss
– Output Capacitance – pF
V
G2S
– Gate2 to Source Voltage – V
–1.0 1.0 2.0 3.00
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
G
ps
– Power Gain – dB
NF – Noise Figure – dB
V
G2S
– Gate2 to Source Voltage – V
–2.0 8.00 2.0 4.0 6.0
20
10
0
–10
–20
5
0
102.0
1.5
1.0
0.5
0
I
D
= 10 mA
(at V
DS
= 10 V
V
G2S
= 4 V)
f = 1 MHz
I
D
= 10 mA
(at V
DS
= 10 V
V
G2S
= 4 V)
f = 900 MHz
G
ps
NF
4.0
900 MHz Gps AND NF TEST CIRCUIT
V
G2S
(3 V)
1 000 pF
47 kΩ
1 000 pF
to 10 pF
to 10 pF
INPUT
50 Ω
L
1
47 kΩRFC
L
2
to 10 pF
OUTPUT
50 Ω
1 000 pF
1 000 pF
V
G1S
V
DD
(6 V)
L
1
, L
2
; 35 × 5 × 0.2 mm
to 10 pF
2
3SK134B
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document.
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a customer designated “quality assurance program“ for a specific application. The recommended applications
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device before using it in a particular application.
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audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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Anti-radioactive design is not implemented in this product.
M4 94.11