Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 8
1Publication Order Number:
MMSZ5221ET1/D
MMSZ52xxET1G Series,
SZMMSZ52xxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Units
Peak Power Dissipation @ 20 ms (Note 1)
@ TL 25C
Ppk 225 W
Total Power Dissipation on FR−5 Board,
(Note 3) @ TL = 75C
Derated above 75C
PD500
6.7
mW
mW/C
Thermal Resistance, (Note 2)
Junction−to−Ambient
RqJA 340
C/W
Thermal Resistance, (Note 2)
Junction−to−Lead
RqJL 150
C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
+150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMSZ52xxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ52xxET3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
xxx = Device Code (Refer to page 2)
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
xxx M G
G
1
SZMMSZ52xxET1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IFZener Voltage Regulator
IF
V
I
IR
IZT
VR
VZ
VF
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device*
Device
Marking
Zener Voltage (Notes 4 and 5) Zener Impedance (Note 6) Leakage Current
VZ (V) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Min Nom Max mA W W mA mAV
MMSZ5221ET1G CA1 2.28 2.4 2.52 20 30 1200 0.25 100 1
MMSZ5223ET1G CA3 2.57 2.7 2.84 20 30 1300 0.25 75 1
MMSZ5226ET1G CA6 3.14 3.3 3.47 20 28 1600 0.25 25 1
MMSZ5228ET1G CA8 3.71 3.9 4.10 20 23 1900 0.25 10 1
MMSZ5229ET1G CA9 4.09 4.3 4.52 20 22 2000 0.25 5 1
MMSZ5231ET1G CB2 4.85 5.1 5.36 20 17 1600 0.25 5 2
MMSZ5232ET1G CB3 5.32 5.6 5.88 20 11 1600 0.25 5 3
MMSZ5234ET1G CB5 5.89 6.2 6.51 20 7 1000 0.25 5 4
MMSZ5235ET1G CB6 6.46 6.8 7.14 20 5 750 0.25 3 5
MMSZ5236ET1G CB7 7.13 7.5 7.88 20 6 500 0.25 3 6
MMSZ5237ET1G CB8 7.79 8.2 8.61 20 8 500 0.25 3 6.5
MMSZ5240ET1G CC2 9.50 10 10.50 20 17 600 0.25 3 8
MMSZ5242ET1G CC4 11.40 12 12.60 20 30 600 0.25 1 9.1
MMSZ5243ET1G CC5 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9
MMSZ5244ET1G CC6 13.30 14 14.70 9.0 15 600 0.25 0.1 10
MMSZ5245ET1G CC7 14.25 15 15.75 8.5 16 600 0.25 0.1 11
MMSZ5246ET1G CC8 15.20 16 16.80 7.8 17 600 0.25 0.1 12
MMSZ5248ET1G CD1 17.10 18 18.90 7.0 21 600 0.25 0.1 14
MMSZ5250ET1G CD3 19.00 20 21.00 6.2 25 600 0.25 0.1 15
MMSZ5252ET1G CD5 22.80 24 25.20 5.2 33 600 0.25 0.1 18
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Device*
Leakage CurrentZener Impedance (Note 6)Zener Voltage (Notes 4 and 5)
Device
Marking
Device*
IR @ VR
ZZK @ IZK
ZZT @ IZT
@ IZT
VZ (V)
Device
Marking
Device* V
mA
mA
WW
mAMaxNomMin
Device
Marking
MMSZ5253ET1G CD6 23.75 25 26.25 5.0 35 600 0.25 0.1 19
MMSZ5254ET1G CD7 25.65 27 28.35 4.6 41 600 0.25 0.1 21
MMSZ5255ET1G CD8 26.60 28 29.40 4.5 44 600 0.25 0.1 21
MMSZ5256ET1G CD9 28.50 30 31.50 4.2 49 600 0.25 0.1 23
MMSZ5257ET1G CE1 31.35 33 34.65 3.8 58 700 0.25 0.1 25
MMSZ5258ET1G CE2 34.20 36 37.80 3.4 70 700 0.25 0.1 27
MMSZ5259ET1G CE3 37.05 39 40.95 3.2 80 800 0.25 0.1 30
MMSZ5262ET1G CE6 48.45 51 53.55 2.5 125 1100 0.25 0.1 39
MMSZ5263ET1G CE7 53.20 56 58.80 2.2 150 1300 0.25 0.1 43
4. The type numbers shown have a standard tolerance of 5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30C 1C.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
http://onsemi.com
4
TYPICAL CHARACTERISTICS
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55C to +150C)
TYPICAL TC VALUES
FOR MMSZ5221BT1G SERIES
VZ @ IZT
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55C to +150C)
VZ @ IZT
1.2
1.0
0.8
0.6
0.4
0.2
01501251007550250
T, TEMPERATURE (C)
Figure 3. Steady State Power Derating
PD versus TA
PD versus TL
0.1
PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1 10 100 1000
1000
100
10
1
RECTANGULAR
WAVEFORM, TA = 25C
100
VZ, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
Zener Impedance
101
1000
100
10
1
TJ = 25C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF
, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
1000
100
10
1
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
150C75C 25C 0C
TYPICAL TC VALUES
FOR MMSZ5221BT1G SERIES
qVZ, TEMPERATURE COEFFICIENT (mV/C)
qVZ, TEMPERATURE COEFFICIENT (mV/C)
Ppk, PEAK SURGE POWER (WATTS)
ZZT
, DYNAMIC IMPEDANCE (W)
IF
, FORWARD CURRENT (mA)
PD, POWER DISSIPATION (WATTS)
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
http://onsemi.com
5
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25C
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 10 30 50 70 90
TA = 25C
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150C
+25C
−55C
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
IR, LEAKAGE CURRENT (mA)
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
100
Figure 11. 8 20 ms Pulse Waveform
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
% OF PEAK PULSE CURRENT
PEAK VALUE IRSM @ 8 ms
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
http://onsemi.com
6
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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