FDS6675BZ P-Channel PowerTrench(R) MOSFET tm -30V, -11A, 13m General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. Max rDS(on) = 13m at VGS = -10V, ID = -11A Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9A Extended VGS range (-25V) for battery applications This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. HBM ESD protection level of 5.4 KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant D D D D SO-8 S S S G 5 4 6 3 7 2 8 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) Units V 25 V -11 -Pulsed A -55 Power Dissipation for Single Operation (Note 1a) PD TJ, TSTG Ratings -30 2.5 (Note 1b) 1.2 (Note 1c) 1.0 Operating and Storage Temperature W -55 to 150 C Thermal Characteristics RJA Thermal Resistance , Junction to Ambient (Note 1a) 50 C/W RJC Thermal Resistance , Junction to Case (Note 1) 25 C/W Package Marking and Ordering Information Device Marking FDS6675BZ Device FDS6675BZ (c)2009 Fairchild Semiconductor Corporation FDS6675BZ Rev. B2 Reel Size 13'' 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET March 2009 Symbol Parameter Test Conditions Min -30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250A, VGS = 0V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = -250A, referenced to 25C V IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V -1 A IGSS Gate to Source Leakage Current VGS = 25V, VDS = 0V 10 A -3 V -20 mV/C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250A, referenced to 25C 15.7 VGS = -10V , ID = -11A 10.8 13.0 VGS = -4.5V, ID = -9A 17.4 21.8 VGS = -10V, ID = -11A TJ = 125oC 15.0 18.8 rDS(on) gFS Drain to Source On Resistance Forward Transconductance VDS = -5V, ID = -11A -1 -2 mV/C 34 m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 1855 2470 pF 335 450 pF 330 500 pF 3.0 10 ns 7.8 16 ns 120 200 ns 60 100 ns VDS = -15V, VGS = -10V, ID = -11A 44 62 nC VDS = -15V, VGS = -5V, ID = -11A 25 35 nC 7.2 nC 11.4 nC VDS = -15V, VGS = 0V, f = 1MHz Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain Charge VDD = -15V, ID = -11A VGS = -10V, RGS = 6 Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -1.2 V trr Reverse Recovery Time IF = -11A, di/dt = 100A/s -0.7 42 ns Qrr Reverse Recovery Charge IF = -11A, di/dt = 100A/s 30 nC Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b)105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimun pad Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2 2 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted VGS = - 10V -ID, DRAIN CURRENT (A) 50 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = - 5V VGS = - 4.5V 40 VGS = - 4V 30 20 VGS = - 3.5V 10 0 VGS = - 3V 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 3.0 1.5 0.5 0 10 20 30 40 -ID, DRAIN CURRENT(A) 50 60 ID = -11A PULSE DURATION = 80s VGS = -10V 0.8 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 40 TJ = 150oC 20 TJ = 25oC TJ = -55oC 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ = 150oC 20 10 TJ = 25oC 10 4.5 6.0 7.5 9.0 -VGS, GATE TO SOURCE VOLTAGE (V) 100 VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2 30 Figure 4. On-Resistance vs Gate to Source Voltage 60 10 DUTY CYCLE = 0.5%MAX 40 0 3.0 160 Figure 3. Normalized On Resistance vs Junction Temperature 0 2.0 VGS = - 10V 50 1.0 30 VGS = - 5V 1.0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.2 50 VGS = - 4.5V 2.0 ID = -11A 0.6 -80 VGS = - 4V 2.5 1.6 1.4 PULSE DURATION = 80s VGS = - 3.5V DUTY CYCLE = 0.5%MAX 3.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics -ID, DRAIN CURRENT (A) 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4000 Ciss 8 VDD = -15V VDD = -10V 6 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 4 VDD = -20V f = 1MHz VGS = 0V 0 0 10 20 30 40 Qg, GATE CHARGE(nC) 100 0.1 50 -IAS, AVALANCHE CURRENT(A) 100 10 TJ = 150oC 1 0.1 TJ = 25oC 0.01 1E-3 1E-4 0 5 10 15 20 -VGS(V) 25 30 20 10 TJ = 25oC TJ = 125oC 1 -2 10 35 Figure 9. Ig vs VGS -1 0 1 2 10 10 10 tAV, TIME IN AVALANCHE(ms) 10 Figure 10. Unclamped Inductive Switching Capability 12 100 100 us ID, DRAIN CURRENT (A) 10 VGS = -10V 8 6 VGS = -4.5V 4 2 10 1 ms 1 0.1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s RJA = 125 oC/W DC o TA = 25 C 0 25 30 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 1000 -Ig(uA) Coss Crss 2 Figure 7. Gate Charge Characteristics -ID, DRAIN CURRENT (A) 1000 50 75 100 125 0.01 0.01 150 Figure 11. Maximum Continuous Drain Current vs Ambient Temperature (c)2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2 0.1 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) TA, AMBIENT TEMPERATURE(oC) Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 4 P(PK), PEAK TRANSIENT POWER (W) 10 VGS = -10 V 3 10 2 10 SINGLE PULSE RJA = 125 oC/W 10 TA = 25 oC 1 0.5 -4 10 -3 -2 10 10 -1 10 1 10 2 10 2 10 10 3 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZJA 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 -1 10 -2 10 PDM t1 SINGLE PULSE t2 o -3 RJA = 125 C/W 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -4 10 -4 10 -3 10 -2 10 -1 10 1 10 10 3 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve (c)2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2 5 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TriFault DetectTM TRUECURRENTTM* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I39 (c)2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2 6 www.fairchildsemi.com FDS6675BZ P-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.