SGS-THOMSON MICROELECTROMICS ky * BZW06-5V8/376 BZW06-5V8B/376B TRANSIL FEATURES a PEAK PULSE POWER : 600 W (10/100Qus) a STAND-OFF VOLTAGERANGE : From 5.8V to 376 V a UNI AND BIDIRECTIONAL TYPES a LOW CLAMPING FACTOR a FAST RESPONSE TIME a UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's. ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) F126 Symbol Parameter Value Unit Ppp Peak pulse power dissipation (see note 1) Tj initial= Tamb 600 WwW P Power dissipation on infinite heatsink Tamb = 75C 1.7 Ww lFsm for unidirectional types Non repetitive surge peak forward current tp= 10ms 100 A Tj initial= Tamb Tstg Storage temperature range Tj Maximum junction temperature -65to+175 C 175 C from case. TL Maximum lead temperature for soldering during 10s a 5mm 230 C Note 1: Fora surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Parameter Value Unit Rth j-1) Junction to leads 60 C/W Rth (j-a) Junctionto ambient on printed circuit. Liaag = 10mm 100 CAN January 1998 Ed:2 1/6BZW06-xx ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol Parameter VRM Stand-oft voltage VBR Breakdown voltage VeL Clamping voltage IRM Leakage current @ VRM V IPP Peak pulse current OT Voltage temperature coefficient VF Forward voltage crop Ipp Types Inm@Vam | Ver @ Ir Vet @ Ipp Ve_ @ Ipp aT c max min max max max typ nate2 10/1000us 8/20us note3 | noted Unidirectional Bidirectional pA Vv V mA Vv A V A jo*rKC pF BZW06-5V8 BZW06-5V8B 1000] 5.8 6.45 10 10.5 57.0 13.4 | 298 5.7 4000 BZW06-6V4 BZW06-6V4B 500] 64 7.13 10 11.3 53.0 14.5 | 276 6.1 3700 BZWO6-8V5 BZW08-8V5B 10] 85 9.5 1 14.5 41 186 | 215 7.3 2800 BZW06-10 BZW06-10B 5| 10.2 | 11.4 1 16.7 | 36.0 | 21.7 | 184 7.8 | 2300 BZWO06-13 BZW06-13B 5] 12.8 14.3 1 21.2 28.0 e7.2 | 147 8.4 1900 BZW06-15 BZW06-15B 1) 15.3 17.1 1 25.2 24.0 32.5 | 123 8.8 1600 BZW06-19 BZW06-19B 1] 18.8 | 20.9 1 30.6 | 196 | 39.3 | 102 g.2 |1350 BZW06-20 BZW06-20B 1] 205 | 22.8 1 33.2 | 180 | 42.8 | 93 g.4 |1250 BZW06-23 BZW06-23B 1] 23.1 | 25.7 1 37.5 | 16.0 | 48.3 | 83 9.6 | 1150 BZWO6-26 BZW06-26B 1] 25.6 28.5 1 41.5 14.5 53.5 75 9.7 1075 BZW06-28 BZW06-28B 1] 28.2 | 31.4 1 45.7 | 13.1 | 59.0 |] 68 9.8 | 1000 BZW06-31 BZW06-31B 1] 308 | 34.2 1 499 | 120 | 643 | 62 9.6 950 BZWO06-33 BZW06-33B 1) 33.3 37.1 1 53.9 11.1 69.7 57 10.0 900 BZW06-40 BZW06-40B 1] 40.2 44.7 1 64.8 9.3 84 48 10.1 800 BZW06-48 BZW06-48B 1| 47.8 | 53.2 1 77.0 | 7.8 100 | 40 10.3 | 700 BZW06-58 BZW06-58B 1) 58.1 64.6 1 92.0 6.5 121 33 10.4 625 BZW06-70 BZW06-70B 1] 70.1 | 77.9 1 113 5.3 146 | 27.0] 105 | 550 BZWO06-85 BZW06-85B 1) 85.5 95.0 1 137 44 178 | 22.5 10.6 500 BZW06-102 BZW06-102B 1] 102 | 114 1 165 3.6 2i2 |190] 10.7 | 450 BZW06-128 BZW06-128B 1] 128 | 143 1 207 2.9 265 115.0] 108 | 400 BZWO6-154 B/ZWO06-154B 1] 154 171 1 246 24 317 | 12.6 10.8 360 BZWO06-171 BZW06-171B 1) 171 190 1 274 2.2 353 11.3 10.8 350 = K3p iiexorcmounsBZW06-xx Types lnm @ Van Ver @ Ve_ @ Ipp Vet @ Ipp aT c min max max max | typ note2 10/1000ps 8/20us note3 | note4 Unidirectional Bidirectional pA Vv Vv mA V A V A 1o4"C | pF BZWO6-188 BZW06-188B 1) 188 | 209 1 328 2.0 388 10.3 10.8 330 BZWO06-213 BZW06-213B 1] 231 | 237 1 344 2.0 442 9.0 11.0 310 BZWO06-256 BZW06-256B 1] 256 | 285 1 414 1.6 529 7.6 11.0 290 BZW06-273 BZW06-273B 1] 273 | 304 1 438 1.6 564 7.1 11.0 280 BZWO06-299 BZW06-299B 1] 299 | 332 1 482 1.6 618 6.5 11.0 270 BZW06-342 BZW06-342B 1| 342 | 380 1 548 1.3 706 5.7 11.0 360 BZW06-376 BZW06-376B 1| 376 | 418 1 603 1.3 776 5.7 11.0 350 Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). % Ipp % 100 4 10 ps 100 = we PULSE WAVEFORM 10/1000 80 BS nd 50 |--+---- PA 60 : ~~ 0 i t 40 1000 ps 20 Note 2: Pulse test: tp < 50ms. T} Initial (C) Note3: AVBR =oaT * (Tamb- 25)* VBR(25C) o I | | Noted: VR=0V, F=1 MHz. For bidirectional types, Oo 20 40 60 80 100 120 140 160 180 200 capacitance value is divided by 2 f&, SGS-THOMSON 3/6 SIF tncaoszcTRoOWIesBZW06-xx Fig.2 : Peak pulse power versus exponential pulse duration. Ppp (W) 1E5 Tj initial = 250 1E4 1E3 1E2 tp {ms } EXPO. 1E1 0.001 0.01 | 1 10 100 Fig.3 : Clamping voltage versus peak pulse current. Exponentialwaveform tp =20 us tp = 1 ms------------ VeL (W) 1000 -376 PPT] Initial = 25C BWZO6 - 188 tp<10 ps8 100 BWZ06 -33 BWz06 -19 BWwz06-10 10 -5V8 Ipp (A) 1 0.1 1 10 100 1000 Note : The curves of the figure3 are specified for a junction temperatureof 25 C before surge. The given results may be extrapolated for other junction temperatures by using the following formula : AVar = aT + (Tamb -25) Var (25C). For intermediate voltages, extrapolate the givenresults. 46 iy SGS-THOMSON MIGRCELECTRONICSBZW06-xx Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). C (pF) 10000 T) = 25C F= 1 MHz 1000 100 VR(V) 10 100 500 16 1 Fig. 5 : Peaktorward voltagedrop versus peakforward current (typical values for unidirectional types). Note : Multiply by 2 for units with VBR > 220V. Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values). (pF) 10000 Tj =25 F= 1 MHz 100 VR) 10 100 506 10 1 Fig.6: Transientthermal impedance junction ambi entversus pulse duration (For FR4 PC Board with L lead = 10mm). tru (A) Zth (j-a) (C/W) 100 130 2c 160C - - 10 19 Yeu tp (3) 1 005 115 2 25 335 4 45 ao 0.1 1 10 100 1000 Fig. 7 : Relative variation of leakage current versus junction temperature. la(T]) la(Tj = 25C) 5E:3 FCT} ) 41E4+3 Vr = VAM 1E+2 1E+1 1E+0 TIPS) 1E-1 0 25 50 75 100 125 150 kay, SGS-THOMSON 5/6 ST7 MickoazcTRONIesBZW06-xx ORDER CODE 600 W STAND-OFF VOLTAGE BZW 06 - 10 B RL LN. PACKAGING : ? "= Ammopacktape *"RL = Tape and reel BIDIRECTIONAL No suffix : Unidirectional MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectionaltypes only). PACKAGE MECHANICAL DATA F126 (Plastic) DIMENSIONS REF. Millimeters Inches Min. | Typ. | Max. | Min. | Typ. | Max. A 6.05 | 6.20 | 6.35 [0.238] 0.244) 0.250 B 26 31 | 1.024 1.220 @C | 2.95 | 3.00 | 3.05 |0.116])0.118/0.120 @D | 0.76 | 0.81 | 0.86 |0.030]0.032) 0.034 L1 1.27 0.050 Note 1: The lead is not controlled within zone L; Packaging: standardpackaging isin tapeand reel. Weight = 0.40 g. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any intringement of patents or otherrights of third parties which may result from its use. No licanse is grantedby implication or otherwise under any patent or patent rights of S@S-THOMSON Microelectronics. Specitications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are notauthorized tor use as critical componentsin life support devices or systems without express written approval of SGS-THOMSON Micrcelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 8/6 Sar SGS-THOMSON TF iieRoELzeTRORICS