3-19
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
13
2
4
RF OUTRF OUTRF IN
GND
GND
MARKING - N3
NLB-300
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 10GHz
The NLB-300 cascadable broadband InGaP/GaAs MMIC amplifier is a low-
cost, high-performance solution for general purpose RF and microwave
amplification needs. This 50Ω gain block is based on a reliable HBT pro-
prietary MMIC design, providing unsurpassed performance for small-sig-
nal applications. Designed with an external bias resistor, the NLB-300
provides flexibility and stability. The NLB-300 is packaged in a low-cost,
surface-mount plastic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements.
Features
Reliable, Low-Cost HBT
Design
13.0dB Gain, +11.1dBm
P1dB@2GHz
High P1dB of
+14.1dBm@6.0GHz and
+12.7dBm@10.0GHz
Single Power Supply Opera-
tion
50Ω I/O Matched for High
Freq. Use
Applications
Narrow and Broadband Com-
mercial and Military Radio
Designs
Linear and Saturated Amplifi-
ers
Gain Stage or Driver Amplifi-
ers for MWRadio/Optical
Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cel-
lular/DWDM)
NLB-300Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz
NLB-300 Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz
NLB-300-T1 Tape & Reel, 1000 Pieces
NLB-300-E Fully Assembled Evaluation Board
NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit
Rev A10 DS070123
9
NLB-300Cas-
cadable
Broadband
GaAs MMIC
Amplifier DC to
10G Hz
RoHS Compliant & Pb-Free Product
Package Style: Micro-X, 4-Pin, Plastic
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3-20
NLB-300
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Absolute Maximum Ratings
Parameter Rating Unit
RF Input Power +20 dBm
Power Dissipation 300 mW
Device Current 70 mA
Channel Temperature 200 °C
Operating Temperature -45 to +85 °C
Storage Temperature -65 to +150 °C
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter Specification Unit Condition
Min. Typ. Max.
Overall VD=+3.8V, ICC=50mA, Z0=50Ω, TA=+25°C
Small Signal Power Gain, S21 12.0 13.0 dB f=0.1GHz to 1.0GHz
10.7 dB f=1.0GHz to 4.0GHz
8.9 dB f=4.0GHz to 6.0GHz
8.5 8.9 dB f=6.0GHz to 10.0GHz
8.5 dB f=10.0GHz to 12.0GHz
Gain Flatness, GF ±0.1 dB f=5.0GHz to 10.0GHz
Input VSWR 2.2:1 f=0.1GHz to 4.0GHz
2.8:1 f=4.0GHz to 7.0GHz
2.0:1 f=7.0GHz to 12.0GHz
Output VSWR 2.2:1 f=0.1GHz to 4.0GHz
2.9:1 f=4.0GHz to 7.0GHz
2.4:1 f=7.0GHz to 12.0GHz
Output Power @
-1dB Compression, P1dB 11.1 dBm f=2.0GHz
14.1 dBm f = 6.0 GHz
12.7 dBm f=10.0GHz
Noise Figure, NF 4.9 dB f=3.0GHz
Third Order Intercept, IP3 +28.6 dBm f=2.0GHz
+27.0 f=6.0 GHz
Reverse Isolation, S12 -16 dB f=0.1GHz to 20.0GHz
Device Voltage, VD 3.6 3.8 4.2 V
Gain Temperature Coefficient,
δGT/δT
-0.0015 dB/°C
MTTF versus Temperature
@ ICC=50mA
Case Temperature 85 °C
Junction Temperature 113 °C
MTTF >1,000,000 hours
Thermal Resistance
θJC 147 °C/W JTTCASE
–
VDICC
⋅
---------------------------θJC °CWatt⁄()=
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3-21
NLB-300
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Package Drawing
Pin Function Description Interface Schematic
1RF IN
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
2GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
Care should also be taken in the resistor selection to ensure that the cur-
rent into the part never exceeds maximum datasheet operating current
over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply near
5.0V is available, to provide DC feedback to prevent thermal runaway.
Because DC is present on this pin, a DC-blocking capacitor, suitable for the
frequency of operation, should be used in most applications. The supply
side of the bias network should also be well bypassed.
4GND
Same as pin 2.
RVCC VDEVICE
–()
ICC
-------------------------------------------
=
RF OUT
RF IN
B
N 5
C
A
D
4 M
S
Seati ng Plane
0.08 S
6F
E
1 J
2K x 3L 3
H
0.1G
Gauge Plane
Symbol
A
B
C
D
E
F
G
H
J
1K
2L
3M
4N
5
0.535 REF.
MILLIMETERS INCHES
Min. Nom. Max. Min. Nom. Max.
0.021 REF.
2.39 2.54 2.69 0.094 0.100 0.106
0.436 0.510 0.586 0.017 0.020 0.023
2.19 2.34 2.49 0.086 0.092 0.098
1.91 2.16 2.41 0.075 0.085 0.095
1.32 1.52 1.72 0.052 0.060 0.068
0.10 0.15 0.20 0.004 0.006 0.008
0.535 0.660 0.785 0.021 0.026 0.031
0.05 0.10 0.15 0.002 0.004 0.006
0.65 0.75 0.85 0.025 0.029 0.033
0.85 0.95 1.05 0.033 0.037 0.041
4.53 4.68 4.83 0.178 0.184 0.190
4.73 4.88 5.03 0.186 0.192 0.198
NOTE: Al l dimensions are i n m i l limeters, an d
the dimen sio ns in i nche s are for reference only.
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3-22
NLB-300
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
Recommended Bias Resistor Values
Supply Voltage, VCC (V)5 8 10121520
Bias Resistor, RCC (Ω) 22 82 122 162 222 322
C block
1 3
4
2
C block
In Out
L choke
(optional)
RCC
VCC
VDEVICE
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3-23
NLB-300
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool
kit contains the following.
• 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
• 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluation Boards and High Frequency SMA Connectors
• Broadband Bias In structions and Specification Summary Index for ease of operation
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3-24
NLB-300
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Tape and Reel Dimensions
All Dimensions in Millimeters
Ao = 7.0 MM
A1 = 1.8 MM
Bo = 7.0 MM
B1 = 1.3 MM
Ko = 2.1 MM
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C.
4. Ao and Bo measured on a plane 0.3 mm abov e the bottom of the pocket.
5. Ko m ea sured from a plane on the inside bottom of the pock et to the surfac e of the ca rri er.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
A
A
SECTION A-A 8.0
Ao A1
3.0
B1
Bo
5.0 MIN.
2.00 ± 0.05
SEE NOTE 6
4.0
SEE NOTE 1
R0.3 MAX.
0.30
± 0.05
All dimensions in mm
12.0
± 0.3
5.50 ± 0.05
SEE NOTE 6
1.75
R0.3 TYP.Ko
5.0 +0.1
-0.0
User Direction of Feed
LEAD 1
N3
N3
N3
N3
O
S
F
T
BA
D
7.0 +0.079/-0.158
0.724 MAX
0.50 +0.08
3.0 REF
0.540 +0.020/-0.008
0.059 MIN
0.795 MIN
Plastic, Mi cro-X
SIZE (inches)
178 +0.25/-4.0
18.4 MAX
12.8 +2.0
76.2 REF
13.716 +0 .5/-0.2
1.5 MIN
20.2 MIN
SIZE (mm)
FLANGE B
T
F
Diameter
Thickness
Space B etween Flange
HUB
O
S
A
Outer Diamet er
Spindle Hole Diameter
Key Slit Width DKey Slit Diam eter
14.732 mm (7") REEL SYMBOLITEMS
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3-25
NLB-300
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Output P1dB versus Frequency Across Temperature
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0
Fr eq uency (GHz)
Output P1dB (dBm)
25°C
40°C
85°C
Noise Frequency versus Frequency at +25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0
Fr equency (GHz)
Noise Figure (dB)
S11 versus Frequency, Over Temperature
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
Fr equency (GHz)
S21 (dB)
S11, + 2 5° C
S11, - 40° C
S11, + 8 5° C
S21 versus Frequency, Over Temperature
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
Fr equency (GHz)
S21 (dB)
S21, +25 °C
S21, -40°C
S21, +85 °C
S12 versus Frequency, Over Temperature
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
Fr equency (GHz)
S21 (dB)
S12, + 2 5°C
S12, -40 ° C
S12, + 8 5°C
S22 versus Frequency, Over Temperature
-45.0
-40.0
-35.0
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
Fr equency (GHz)
S22 (dB)
S11, + 25° C
S11, - 4 0° C
S11, + 85° C
3
GENERAL PURPOSE
AMPLIFIERS (LNAs,
HPAs, LINEAR AMPS)
3-26
NLB-300
Rev A10 DS070123
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Note: The s-parameter gain results shown include device performance as well as evaluation board and connector loss varia-
tions. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
RoHS Compliant: Yes
Package total weight in grams (g): 0.024
Compliance Date Code: 0601
Bill of Materials Revision: -
Pb Free Category: e3
Pb Cd Hg Cr VI PBB PBDE
Die 000000
Molding Compound 000000
Lead Frame 000000
Die Attach Epoxy 000000
Wire 000000
Solder Plating 000000
* DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the
use of certain hazardous substances in electrical and electronic equipment
RoHS* Banned Material Content
Bill of Materials Parts Per Million (PPM)
This RoHS banned material content declaration was prepared solely on information, including analytical
data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted
