2010. 11. 10 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK596
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
Revision No : 5
CONDENSER MICROPHONE APPLICATION.
FEATURES
·Especially Suited for Use in Audio, Telephone.
·Capacitor Microphones.
·Excellent Voltage Characteristics.
·Excellent Transient Characteristics.
MAXIMUM RATING (Ta=25℃)
1. SOURCE
2. GATE
3. DRAIN
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage VGDO -20 V
Gate Current IG10 mA
Drain Current ID1mA
Drain Power Dissipation PD400 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55~150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate-Drain Breakdown Voltage V(BR)GDO IG=-100μA-20 - - V
Gate-Source Cut-off Voltage VGS(OFF) VDS=5V, ID=1μA- -0.6 -1.5 V
Drain Current IDSS (Note) VDS=5V, VGS=0 100 - 350 μA
Foward Transfer Admittance | yfs |V
DS=5V, VGS=0, f=1kHz 0.4 1.2 - mS
Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz - 3.5 - pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz - 0.65 - pF
Note : IDSS Classification A:100~170, B(Y):150 ~ 240, C(GR):210 ~ 350