MS2216 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features * * * * * * * 1.2 - 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 5.5 WATTS GP = 10 dB MINIMUM INPUT/OUTPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MS2216 is a NPN silicon bipolar transistor designed for L-Band pulsed radar applications. Internal impedance matching assures consistent broadband performance and gold metalization provides maximum reliability under severe operation conditions. The MS2216 utilizes an emitter ballasted die geometry for superior thermal stability under a wide range of pulse widths and duty cycles. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol PDISS IC Vcc TJ T STG Parameter Power Dissipation Device Current Collector-Supply Voltage Junction Temperature Storage Temperature Thermal Data RTH(J-C) 12-10-2002 Junction-case Thermal Resistance* Value Unit 9.0 C/W 16.7 0.82 32 200 -65 to +200 W A V C C MS2216 ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 25 C) STATIC Symbol BVCBO BVCER BVEBO ICES HFE Test Conditions IC = 5mA IE = 5mA IC = 1mA VBE = 0V VCE = 5V DYNAMIC Symbol POUT hC GP Condition s IE = 0 mA RBE = 10W W IC = 0mA VCE = 28V IC = 500mA Unit Min. Value Typ. Max. Unit f = 1.2 - 1.4GHz PIN = 0.55W Vcc = 28V 47 --- --- % f = 1.2 - 1.4GHz PIN = 0.55W Vcc = 28V 10 --- --- dB ZIN(W) ZCL(W) 1.2 GHz 10.5 + j9.0 9.0 + j3.0 1.3 GHz 9.5 + j8.0 6.5 + j2.0 1.4 GHz 8.5 + j7.0 6.0 + j1.0 --- V V V mA --- Vcc = 28V Duty Cycle = 10% --- ------1.0 300 PIN = 0.55W Pulse Width = 1000m ms 5.5 ----------- f = 1.2 - 1.4GHz FREQ 12-10-2002 Max. 48 48 3.5 --30 Test Conditions IMPEDANCE DATA PIN = 0.55W VCC = 28V Value Typ. Min. W MS2216 PACKAGE MECHANICAL DATA 12-10-2002