©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB1366
PNP Epitaxial Silicon Transistor
Absolute Maximu m Rating s TC=25°C u nless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Classifi cation
Symbol Parameter Value Units
VCBO Collector-Base V oltage - 60 V
VCEO Collector-Emitter Volt age - 60 V
VEBO Emitter-Base Voltage - 7 V
IC Collector Current(DC) - 3 A
IB Base Current - 0.5 A
PC Collector Dissipation (Ta=25°C) 2 W
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Temperature 150 °C
TSTG St orage Temperature - 55 ~ 150 °C
Symbol Param e ter Test Condition Min. Typ. Max. Units
BVCEO Collector-Emitter Breakdown Voltage IC = - 50mA, IB = 0 - 60 V
ICBO Collector Cut-off Current VCB = - 60V, IE = 0 - 100 µA
IEBO Emitte r Cut- o ff Curre n t VEB = - 7V, IC = 0 - 100 µA
hFE1
hFE2
DC Current Gain VCE = - 5 V, IC = - 0.5A
VCE = - 5V, IC = - 3A 100
20 320
VCE(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.5 - 1 V
VBE(on) Base-Emitter ON Voltage VCE = - 5 V, IC = - 0.5A - 0.7 - 1 V
fT Current Gain Bandwidth Product VCE = - 5V, IC = - 0.5A 9 M Hz
Classification Y G
hFE1 100 ~ 200 150 ~ 320
KSB1366
LOW FREQUENCY POWER AMPLIFIER
• Complement to KSD2012
1
1.Base 2.Collector 3.Emitter
TO-220F
©2000 Fairchild Semiconductor International
KSB1366
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Safe Operating Area Figure 6. Power Derating
-0 -1 -2 -3 -4 -5
-0
-1
-2
-3
-4
-5
IB = -10mA
IB = -20mA
IB = -70mA
IB = -80mA
IB = -60m A
I
B
= -50mA
IB = -30mA
IB = -40mA
IB = 0
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.01 -0.1 -1 -10
1
10
100
1000 VCE = -5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10
-0.01
-0.1
-1
-10 IC = 10 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-0.0 -0.4 -0.8 -1.2 -1.6
-0
-1
-2
-3
-4 VCE = -5V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100
-0.1
-1
-10
1S
DC
VCEOMAX
100mS
1mS
10ms
ICmax(pulse)
ICmax(DC)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
PD[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.10
15.80
±0.20
15.87
±0.20
6.68
±0.20
9.75
±0.30
4.70
±0.20
10.16
±0.20
(1.00x45°)
2.54
±0.20
0.80
±0.10
9.40
±0.20
2.76
±0.20
0.35
±0.10
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
TO-220F
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSB1366
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
