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SOT23
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODES
ISSUE 3 JANUARY 1996 ✪
PIN CONFIGURATION PARTMARKING DETAILS
SEE TUNING CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Reverse Voltage VR30 V
Forward Current IF200 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
VBR 30 V IR
= 10µA
Reverse current IR20 nA VR
= 25V
Series Inductance LS3.0 nH f=250MHz
Lead length≈1.5mm
Diode Capacitance
Temperature Coefficient
TCC 280 400 ppm/ °C VR
= 4V, f=1MHz
Lead length≈1.5mm
Case Capacitance CC0.15 pF f=1MHz
TUNING CHARACTERISTICS (at Tamb
= 25°C).
Type No.
Nominal Capacitance (pF)
VR = 4V, f=1MHz
Q Figure of MERIT
VR
= 4V, f=50MHz
Turning Ratio
C2 / C30
f=1MHz Partmark
Detail
Min. Nom. Max. Min. Max.
FMMV2101 6.1 6.8 7.5 450 2.5 3.3 6R
FMMV2103 9.0 10.0 11.0 400 2.6 3.3 6G
FMMV2104 10.8 12.0 13.2 400 2.6 3.3 6H
FMMV2105 13.5 15.0 16.5 400 2.6 3.3 6J
FMMV2107 19.8 22.0 24.2 350 2.7 3.3 6L
FMMV2108 24.3 27.0 29.7 300 2.7 3.3 6M
FMMV2109 29.3 33.0 36.3 280 2.7 3.3 6N
* SELECTED DEVICE RANGE OFFERED ONLY
3 - 185
FMMV2101
to
FMMV2109
