MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. http://onsemi.com SCRs 4.0 AMPERES RMS 100 - 600 VOLTS Features * * * * * * * * * Pb-Free Package is Available Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Surface Mount Package - Case 369C To Obtain "DPAK" in Straight Lead Version (Shipped in Sleeves): - Add '1' Suffix to Device Number, i.e., MCR706A1 Epoxy Meets UL 94, V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V G A K MARKING DIAGRAMS 4 1 2 3 DPAK CASE 369C STYLE 2 YWW CR 70xA DPAK-3 CASE 369D STYLE 2 YWW CR 70xA 4 1 2 3 Y WW x = Year = Work Week = 3, 6, or 8 PIN ASSIGNMENT 1 Gate 2 Anode 3 Cathode 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 August, 2004 - Rev. 6 1 Publication Order Number: MCR703A/D MCR703A Series MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Rating Peak Repetitive Off-State Voltage (Note 1) (TC = -40 to +110C, Sine Wave, 50 to 60 Hz, Gate Open) Peak Non-Repetitive Off-State Voltage (Sine Wave, 50 to 60 Hz, Gate Open, TC = -40 to +110C) MCR703A MCR706A MCR708A Max Unit V 100 400 600 VRSM MCR703A MCR706A MCR708A On-State RMS Current (180 Conduction Angles; TC = 90C) Average On-State Current (180 Conduction Angles) VDRM, VRRM V 150 450 650 IT(RMS) 4.0 IT(AV) TC = -40 to +90C TC = +100C A A 2.6 1.6 Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, TJ = 110C) (1/2 Sine Wave, 1.5 ms, TJ = 110C) ITSM A 25 35 I2t 2.6 A2sec PGM 0.5 W PG(AV) 0.1 W Forward Peak Gate Current (Pulse Width 1.0 sec, TC = 90C) IGM 0.2 A Operating Junction Temperature Range TJ -40 to +110 C Storage Temperature Range Tstg -40 to +150 C Circuit Fusing (t = 8.3 msec) Forward Peak Gate Power (Pulse Width 1.0 sec, TC = 90C) Forward Average Gate Power (t = 8.3 msec, TC = 90C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic RJC 8.33 C/W Thermal Resistance, Junction-to-Ambient (Note 2) RJA 80 C/W TL 260 C Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds 2. Case 369C when surface mounted on minimum pad sizes recommended. http://onsemi.com 2 MCR703A Series ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit - - - - 10 200 - - 2.2 - - 25 - 75 300 VGT - - - - 0.8 1.0 V VGD 0.2 -- -- V - - - - 5.0 10 OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1 K) A IDRM, IRRM TC = 25C TC = 110C ON CHARACTERISTICS Peak Forward "On" Voltage (ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) VTM Gate Trigger Current (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 Ohms) IGT TC = 25C TC = -40C Gate Trigger Voltage (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 Ohms) TC = 25C TC = -40C Gate Non-Trigger Voltage (Note 3) (VAK = 12 Vdc, RL = 100 Ohms, TC = 110C) Holding Current (VAK = 12 Vdc, Gate Open) (Initiating Current = 200 mA) A IH TC = 25C TC = -40C V mA Peak Reverse Gate Blocking Voltage (IGR = 10 A) VRGM 10 12.5 18 V Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM - - 1.2 A tgt - 2.0 - s Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, RGK = 1 k, Exponential Waveform, TC = 110C) dv/dt - 10 - V/s Repetitive Critical Rate of Rise of On-State Current (Cf = 60 Hz, IPK = 30 A, PW = 100 s, diG/dt = 1 A/s) di/dt - - 100 A/s Total Turn-On Time (Source Voltage = 12 V, RS = 6 k) (ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 s) DYNAMIC CHARACTERISTICS 3. RGK current not included in measurement. ORDERING INFORMATION Package Type Package Shipping MCR703AT4 DPAK 369C 2500 Tape & Reel MCR706AT4 DPAK 369C 2500 Tape & Reel DPAK (Pb-Free) 369C 2500 Tape & Reel MCR708A DPAK 369C 2500 Tape & Reel MCR708A1 DPAK-3 369D 75 Units / Rail MCR708AT4 DPAK 369C 2500 Tape & Reel Device MCR706AT4G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 MCR703A Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off-State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off-State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On-State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) 110 30C P(AV), AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) Anode - 60C 90C 120C 180C 105 DC 95 100 0 1.0 2.0 3.0 5.0 4.0 180C DC 2.0 1.0 0 0 1.0 2.0 3.0 4.0 Figure 1. Average Current Derating Figure 2. On-State Power Dissipation Typical @ TJ = 25C 10 Maximum @ TJ = 25C 1.0 0.5 90C 120C 3.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) Maximum @ TJ = 110C 0.1 30C 60C 4.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) r(t) , TRANSIENT RESISTANCE (NORMALIZED) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 5.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.0 ZJC(t) = RJC(t)*r(t) 0.1 0.01 0.1 1.0 10 100 1000 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 4 5.0 10,000 MCR703A Series 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT ( A) 35 30 0.5 25 20 15 -40 -20 0 20 40 60 80 0 100 110 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 2.0 2.0 IL , LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) -40 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 1.5 1.0 0.5 0 -40 100 110 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature http://onsemi.com 5 MCR703A Series PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O -T- C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- MCR703A Series PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- STYLE 2: PIN 1. 2. 3. 4. T http://onsemi.com 7 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- MCR703A Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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American Technical Support: 800-282-9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 http://onsemi.com 8 For additional information, please contact your local Sales Representative. MCR703A/D