Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 6 1Publication Order Number:
MCR703A/D
MCR703A Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is
critical.
Features
•Pb−Free Package is Available
•Small Size
•Passivated Die Surface for Reliability and Uniformity
•Low Level Triggering and Holding Characteristics
•Recommend Electrical Replacement for C106
•Surface Mount Package − Case 369C
•To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):
− Add ’1’ Suffix to Device Number, i.e., MCR706A1
•Epoxy Meets UL 94, V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B 8000 V
Machine Model, C 400 V
SCRs
4.0 AMPERES RMS
100 − 600 VOLTS
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Cathode
Gate
4Anode
Preferred devices are recommended choices for future use
and best overall value.
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
Y = Year
WW = Work Week
x = 3, 6, or 8
123
4YWW
CR
70xA
DPAK−3
CASE 369D
STYLE 2
123
4
YWW
CR
70xA
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Max Unit
Peak Repetitive Off−State Voltage (Note 1)
(TC = −40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A
MCR706A
MCR708A
VDRM,
VRRM 100
400
600
V
Peak Non-Repetitive Off−State Voltage
(Sine Wave, 50 to 60 Hz, Gate Open, TC = −40 to +110°C) MCR703A
MCR706A
MCR708A
VRSM 150
450
650
V
On−State RMS Current
(180° Conduction Angles; TC = 90°C) IT(RMS) 4.0 A
Average On−State Current
(180° Conduction Angles) TC = −40 to +90°C
TC = +100°C
IT(AV) 2.6
1.6
A
Non-Repetitive Surge Current
(1/2 Sine Wave, 60 Hz, TJ = 110°C)
(1/2 Sine Wave, 1.5 ms, TJ = 110°C)
ITSM 25
35
A
Circuit Fusing (t = 8.3 msec) I2t 2.6 A2sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 sec, TC = 90°C) PGM 0.5 W
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C) PG(AV) 0.1 W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 sec, TC = 90°C) IGM 0.2 A
Operating Junction Temperature Range TJ−40 to +110 °C
Storage Temperature Range Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 8.33 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RJA 80 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C
2. Case 369C when surface mounted on minimum pad sizes recommended.
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3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM; RGK = 1 K)T
C = 25°C
TC = 110°C
IDRM, IRRM −
−−
−10
200
A
ON CHARACTERISTICS
Peak Forward “On” Voltage
(ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) VTM − − 2.2 V
Gate Trigger Current (Continuous dc) (Note 3)
(VAK = 12 Vdc, RL = 24 Ohms) TC = 25°C
TC = −40°C
IGT −
−25
−75
300
A
Gate Trigger Voltage (Continuous dc) (Note 3) TC = 25°C
(VAK = 12 Vdc, RL = 24 Ohms) TC = −40°CVGT −
−−
−0.8
1.0 V
Gate Non-Trigger Voltage (Note 3)
(VAK = 12 Vdc, RL = 100 Ohms, TC = 110°C) VGD 0.2 — — V
Holding Current
(VAK = 12 Vdc, Gate Open) TC = 25°C
(Initiating Current = 200 mA) TC = −40°C
IH−
−−
−5.0
10
mA
Peak Reverse Gate Blocking Voltage
(IGR = 10 A) VRGM 10 12.5 18 V
Peak Reverse Gate Blocking Current
(VGR = 10 V) IRGM − − 1.2 A
Total Turn-On Time
(Source Voltage = 12 V, RS = 6 k)
(ITM = 8.2 A, IGT = 2 mA, Rated VDRM)
(Rise Time = 20 ns, Pulse Width = 10 s)
tgt − 2.0 − s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, RGK = 1 k, Exponential Waveform,
TC = 110°C)
dv/dt − 10 − V/s
Repetitive Critical Rate of Rise of On−State Current
(Cf = 60 Hz, IPK = 30 A, PW = 100 s, diG/dt = 1 A/s) di/dt − − 100 A/s
3. RGK current not included in measurement.
ORDERING INFORMATION
Device Package Type Package Shipping†
MCR703AT4 DPAK 369C 2500 Tape & Reel
MCR706AT4 DPAK 369C 2500 Tape & Reel
MCR706AT4G DPAK
(Pb−Free) 369C 2500 Tape & Reel
MCR708A DPAK 369C 2500 Tape & Reel
MCR708A1 DPAK−3 369D 75 Units / Rail
MCR708AT4 DPAK 369C 2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MCR703A Series
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4
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off−State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off−State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On−State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
30°C
60°C
90°C
Figure 1. Average Current Derating Figure 2. On−State Power Dissipation
Figure 3. On−State Characteristics Figure 4. Transient Thermal Response
5.00
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
110
105
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
5.00
1.0
0
3.0 4.00.5
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.00.1
1.0
0.1
0.01
3.5
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
P
I
r(t), TRANSIENT RESISTANCE (NORMALIZED)
100
95
3.01.0 2.0 4.0 4.01.0 2.0 3.0
2.0
3.0
4.0
1.0 1.5 2.0 2.5 10 100 1000 10,000
°
5.0
, AVERAGE POWER DISSIPATION (WATTS)
(AV)
T, INSTANTANEOUS ON−STATE CURRENT (AMPS)
4.5
ZJC(t) = RJC(t)•r(t)
120°C
180°C
DC
30°C
60°C
90°C
120°C
180°C
DC
Maximum @ TJ = 110°C
Maximum @ TJ = 25°C
Typical @ TJ = 25°C
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110−40
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
IH, HOLDING CURRENT (mA)
I
0.5
0
20−20 0 40
, LATCHING CURRENT (mA)
L
1.0
60 80 100 110−40
TJ, JUNCTION TEMPERATURE (°C)
2.0
1.5
0.5
0
20−20 0 40
1.0
60 80 100
TJ, JUNCTION TEMPERATURE (°C)
1.0
0
0.5
VGT, GATE TRIGGER VOLTAGE (VOLTS)
−20 40−40 0 20 10060 80 110
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
−20 40−40
TJ, JUNCTION TEMPERATURE (°C)
35
30
25
20
15
0
, GATE TRIGGER CURRENT ( A)IGT
20 10060 80 110
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 7. Typical Holding Current versus
Junction Temperature Figure 8. Typical Latching Current versus
Junction Temperature
MCR703A Series
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6
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T− SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244 3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MCR703A Series
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7
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MCR703A Series
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8
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MCR703A/D
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