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MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1. 0
November 2014
MMBD1401A / MMBD1403A / MMBD1404A /
MMBD1405A
High-Voltage General-Purpose Diode
Ordering Information
Part Number Top Mark Package Packing Method
MMBD1401A A29 SOT-23 3L Tape and Reel
MMBD1403A A32 SOT-23 3L Tape and Reel
MMBD1404A A33 SOT-23 3L Tape and Reel
MMBD1405A A34 SOT-23 3L Tape and Reel
1
2
3
SOT-23
Connection Diagram
3
12
3
12
3
12
1
3
1401A 1403A
1405A1404A
2NC
Descriptions
Sourced from process 2V.
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1. 0 2
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or
low-duty-cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Device is mou nted on g lass epox y PCB 1.6 inch × 1.6 inch × 0.06 inch, mounti ng pad for the collec tor l ead mini mum
0.93 in2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
WIV Working Inverse Voltage 175 V
IOAverage Rectified Current 200 mA
IFDC Forward Current 600 mA
ifRecurrent Peak Forward Current 700 mA
if(surge) Non-Repetitive Peak Forward
Surge Current Pulse Width = 1.0 second 1.0 A
Pulse Width = 1.0 microsecond 2.0
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature 150 °C
Symbol Parameter Max. Unit
PDPower Dissipation 350 mW
Derate above 25°C 2.8 mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W
Symbol Parameter Conditions Min. Max. Unit
BVBreakdown Voltage IR = 100 μA250V
IRReverse Current VR = 120 V 40 nA
VR = 175 V 100 nA
VFForward Voltage
IF = 10 mA 800 mV
IF = 50 mA 760 920 mV
IF = 200 mA 1.1 V
IF = 300 mA 1.25 V
CODiode Capa citance VR = 0, f = 1.0 MHz 2.0 pF
TRR Reverse Recovery Time IF = IR = 30 mA,
IRR = 1.0 mA, RL = 100 Ω50 nS
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1. 0 3
Typical Performance Characteristics
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100 μAFigure 2. Reverse Current vs. Reverse Voltage
IR - 55 to 205 V
Figure 3. Reverse Current vs. Reverse Voltage
IR - 180 to 255 V Figure 4. Forward Voltage vs. Forward Current
VF - 1.0 to 100 μA
Figure 5. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA Figure 6. Forward Voltage vs. Forward Current
VF - 10 to 800 mA
3 5 10 20 30 50 100
275
300
325
I - REVERSE CURRENT (uA)
V - REVERSE VOLTAGE (V)
R
R
Ta= 25°C
VR
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
55 75 95 115 135 155 175 195
0
10
20
30
40
50
V - REVERSE VOLTAGE (V)
I - REVERSE CURRENT (nA)
R
R
Ta= 25°C
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
180 200 220 240
20
30
40
50
60
70
80
90
100
V - REVERSE VOLTAGE (V)
I - REVERSE CURRENT (nA)
R
R
Ta= 25°C
255
IR
1 2 3 5 10 20 30 50 100
250
300
350
400
450
I - FORWARD CURRENT (uA)
V - FORWARD VOLTAGE (mV)
F
F
Ta= 25°C
VF
VF - 0.1 to 10 mA
0.1 0.2 0.3 0.5 1 2 3 5 10
450
500
550
600
650
700
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
725 Ta= 25°C
V
F
10 20 30 50 100 200 300 500
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
800
Ta= 25°C
VF
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A — High-Voltage General-Purpose Diode
© 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBD1401A / MMBD1403A / MMBD1404A / MMBD1405A Rev. 1.1. 0 4
Typical Performance Characteristics (Continued)
Figure 7. Forward Voltage vs. Ambient Temperature
VF - 1.0 μA - 10 mA (- 40 to +80°C) Figure 8. Capacitance vs. Reverse Voltage
Figure 9. Reverse Recovery Time vs.
Reverse Recovery Current (Irr) Figure 10. Average Rectified Current(IO) and
Forward Current (IF) vs. Ambient Temperature(TA)
Figure 11. Power Derating Curve
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
200
400
600
800
I - FORWARD CURRENT (mA)
V - FORWARD VOLTAGE (mV)
F
F
Ta= 25°C
Ta= +80°C
Ta= -40°C
VF
0 2 4 6 8 10 12 14
0.8
0.9
1
1.1
1.2
1.3
REVERSE VOLTAGE (V)
CAPACITANCE (pF)
Ta= 25°C
15
11.522.53
20
30
40
50
Irr - REVERSE RECOVERY CURRENT (mA)
REVERSE RECOVERY (nS)
IF = IR = 30 mA
Rloop = 100 Ohms
050100150
0
100
200
300
400
500
T - AMBIENT TEMPERATURE ( C)
I - CURRENT (mA)
I - FORWARD CURRENT STEADY STATE - mA
o
R
Io - AVERAGE RECTIFIED CURRENT - mA
A
0 50 100 150 200
0
100
200
300
400
500
I - AVERAGE TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
O
D
o
DO-35 Pkg
SOT-23 Pkg
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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