MM3008 (SILICON) MM3009 High-voltage NPN silicon transistors designed for video output circuitry in transistorized television re- ceivers. 2 STYLE 1: PIN 1. EMITTER CASE 79 : 3 PINT EMIT (TO-39) 3. COLLECTOR MAXIMUM RATINGS Rating Symbol { MM3008 | MM3009 Unit Collector-Emitter Voltage Voro 120 180 Vde Emitter~Base Voltage Yep 6.0 Vde Collector Current ~ Continuous I, 400 mAdc Total Power Dissipation @ T, = 25C Pp 1.0 Watt Derate above 25C 5.71 mW/"C Total Power Dissipation @ Th = 25C Py 4.0 Watts Derate above 25C 22.8 mW/C Operating & Storage Junction Tyee -65 to +200 c Temperature Range ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic | Symbol | Min | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage* BVorot Vde a, = 10 mAdc, I, = 0) MM3008 120 - MM3009 180 - Emitter-Base Breakdown Voltage BVEBO Vde a, = 10 pAdc Io = 0} Conector Cutoff Current logo wAdc Wop = 120 Vdc, be = 0) MM3008 - 0.1 Voz = 180 Vde, Ip = 0) MM3009 - 0.1 Emitter Cutoff Current IeBo uAde (Vor = 4.0 Vdc, Io = 0) 0.1 ON CHARACTERISTICS DC Current Gain hop - ly = 1.0 mAdc, V,,, = 10 Vdc) 30 - CE~ (Ig = 10 mAde, V cx ~ 10 Vde) 40 - (ig = 30 mAde, Vog = 10 Vee) 30 DYNAMIC CHARACTERISTICS Current-Gain- Bandwidth Product fp MHz ly = 20 mAdc, Vor = 20 Vdc, f = 20 MHz) 50 - Collector- Base Capacitance Cop Fr (Wop, = 20 Vde, I, = 0, = 100 kHz) - 3.0 P Input Capacitance Cin 20 pF Vor = 0.5 Vde, In = 0, f = 100 kHz) * Pulse Test: Pulse Width < 300 us, Duty Cycle < 2. 0%. 609MM3008, MM3009 (continued) FIGURE 1 CURRENT GAIN 200 Ne @ 1.0 kHz 100 hee CURRENT GAIN 3 on o 30 20 05 07 10 2.0 3.0 5.0 7.0 10 20 = 30 50 Ic, COLLECTOR CURRENT (mA) FIGURE 2 CAPACITANCE ry Oo ~ = o 2 N o Co, OUTPUT CAPACITANCE (pF) 10 10 20 3.0 5.0 7.0 10 20 =30 50 70 100 Vp, REVERSE VOLTAGE (VOLTS) 610