FDC6324L Integrated Load Switch Features General Description These Integrated Load Switches are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage high side load switch application where low conduction loss and ease of driving are needed. VDROP =0.2V @ VIN=12V, I L=1A, VON/OFF=1.5 to 8V VDROP =0.3V @ VIN=5V, I L=1A, VON/OFF=1.5 to 8V. High density cell design for extremely low on-resistance. VON/OFF Zener protection for ESD ruggedness. Body Model. >6KV Human TM SuperSOT -6 package design using copper lead frame for superior thermal and electrical capabilities. SOT-23 SuperSOTTM-6 SuperSOTTM-8 Vin,R1 4 ON/OFF 5 R1,C1 6 SO-8 SOIC-16 SOT-223 EQUIVALENT CIRCUIT 3 Vout,C1 2 Vout,C1 1 R2 Q2 + IN VD R O P - OUT Q1 ON/OFF pin 1 SuperSOT TM-6 Absolute Operating Range See Application Circuit TA = 25C unless otherwise noted Symbol Parameter FDC6324L Units VIN Input Voltage Range 3 - 20 V VON/OFF ON/OFF Voltage Range 1.5 - 8 V (Note 1) 1.5 A (Note 1 & 3) 2.5 IL Load Current @ VDROP =0.5V - Continuous - Pulsed PD Maximum Power Dissipation TJ ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm) (Note 2a) 0.7 W -55 to 150 C 6 kV THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient (Note 2a) 180 C/W R JC Thermal Resistance, Junction-to-Case (Note 2) 60 C/W (c) 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 4 Publication Order Number: FDC6324L/D Electrical Characteristics (T Symbol A = 25C unless otherwise noted) Parameter Conditions Min Typ Max Units VIN = 20 V, VON/OFF = 0 V 1 A VIN = -20 V, VON/OFF = 0 V -1 A 3 20 V 1.5 8 V V OFF CHARACTERISTICS I FL Forward Leakage Current I RL Reverse Leakage Current ON CHARACTERISTICS (Note 3) VIN Input Voltage VON/OFF On/Off Voltage VDROP Conduction Voltage Drop @ 1A Load Current IL VIN = 10 V, VON/OFF = 3.3V 0.135 0.2 VIN = 5 V, VON/OFF = 3.3 V 0.215 0.3 VDROP = 0.2 V, VIN = 10 V, VON/OFF = 3.3 V 1 VDROP = 0.3 V, VIN = 5 V, VON/OFF = 3.3 V 1 Notes: 1. V IN=20V, VON/OFF=8V, V DROP=0.5V, T A =25oC 2. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. P D( t ) = TJ-T A R J A(t) = TJ -TA R J +R C CA(t) = I 2D ( t ) x RDS(ON)@T J Typical R JA for single device operation using the board layouts shown below on FR-4 PCB in astill air environment: a. 180oC/W when mounted on a 2oz minimum copper pad. 2a Scale 1 : 1 on letter size paper 3. Pulse Test: Pulse Width < 300s, Duty Cycle< 2.0% www.onsemi.com 2 A Typical Electrical Characteristics (TA = 25 O C unless otherwise noted ) 0.5 0.5 0.4 0.3 , (V) O R TJ = 25C 0.3 0.2 VD 0.4 V D R O, (V) P TJ = 125C P TJ = 125C 0.2 TJ = 25C V IN = 12V V ON/OFF = 1.5 - 8V PW =300us, D 2% 0.1 0 0 0 1 2 I L ,(A) V IN = 5V V ON/OFF = 1.5 - 8V PW =300us, D 2% 0.1 3 4 0 1 Figure 1. VDROP Versus IL at VIN=12V. 4 0.45 I = 1A L VON/OFF = 1.5 - 8V PW =300us, D 2 % I L = 1A VIN = 5V PW =300us, D 2 % 0.4 RDS(ON), (Ohm) 0.8 V DROP (V) 3 Figure 2. VDROP Versus IL at VIN=5.0V. 1 0.6 0.4 T J = 125C 0.35 TJ = 125C 0.3 0.25 TJ = 25C 0.2 0.2 TJ = 25C 0 1 2 3 V IN 4 5 0.15 (V) I L = 1A V ON/OFF = 1.5 - 8V PW =300us, D 2 % 0.6 0.4 TJ = 125C 0.2 TJ = 25C 0 1 2 3 1 2 3 4 Figure 4. R(ON) Versus IL at V IN=5.0V. 1 0.8 0 I L , (A) Figure 3. VDROP Versus V IN at IL=1A. R (ON),(Ohm) 2 I L (A) 4 5 V IN , (V) Figure 5. On Resistance Variation with Input Voltage. www.onsemi.com 3 5 Typical Electrical Characteristics (TA = 25 O C unless otherwise noted ) 500 500 300 200 400 td(off) Vin = 12V IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF Time (us) Time (us) 400 Vin = 5V IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF tf 300 200 td(off) tf 100 100 tr tr 0 0 20 40 60 R2 (KOhm) td(on) 80 0 100 0 Figure 6. Switching Variation with R2 at Vin=12V and R1=300KOhm. 500 tr 200 100 0 td(on) tf td(off) 0 20 40 60 R2 (KOhm) 80 80 60 40 5V 20 3.3V 0 100 0 20 Vdrop (mV) 40 60 R2 (KOhm) 80 100 Figure 9. % of Current Overshoot Variation with Vin and R2 . ton 2,000 1,600 100 IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF Vin = 12V 100 Figure 8. Switching Variation with R2 at Vin=3.3V and R1=300KOhm. IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF td(on) 80 120 % of Current Overshoot Time (us) 300 40 60 R2 (KOhm) Figure 7. Switching Variation with R2 at Vin=5V and R1=300KOhm. Vin = 3.3V IL = 1A Von/off = 5V R1 = 300KOhm Ci = 10uF Co = 1uF 400 20 t d(on) t off tr t d(off) tf 90% 90% Vin = 3.3V 1,200 VO U T 10% 800 10% INVERTED 90% 5V 400 V IN 12V 0 0 20 40 60 R2 (KOhm) 80 100 50% 50% 10% PULSE WIDTH Figure 11. Switching Waveforms. Figure 10. Vdrop Variation with Vin and R2 . www.onsemi.com 4 Typical Electrical Characteristics (TA = 25 O C unless otherwise noted ) IL , DRAIN CURRENT (A) 10 3 1 10 0u s 1m 10 s ms IT LIM N) R(O 10 0m s 1s 0.3 0.1 0.03 0.01 0.1 DC VIN = 12V SINGLE PULSE R JA = See Note 2a TA = 25C 0.2 0.5 1 2 V DROP (V) 5 10 20 30 Figure 12. Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 RJA (t) = r(t) * R JA R JA = See Note 2a 0.1 P(pk) 0.05 t1 0.02 0.02 0.01 0.01 t2 TJ - TA = P * R JA(t) Single Pulse Duty Cycle, D = t 1/ t 2 0.005 0.00001 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 10 Figure 13. Transient Thermal Response Curve. Note: Thermal characterization performed on the conditions described in Note 2a. Transient thermal response will change depends on the circuit board www.onsemi.com 5 100 300 FDC6324L Load Switch Application APPLICATION CIRCUIT Q2 IN OUT C1 R1 ON/OFF Q1 Co LOAD R2 Component Values R1 Typical 10k - 1M R2 Typical 0 - 10k C1 Typical 1000pF General Description This device is particularly suited for computer peripheral switching applications where 20V input and 1A output current capability are needed. This load switch integrates a small N-Channel Power MOSFET (Q1) which drives a large P-Channel Power MOSFET (Q2) in one tiny SuperSOTTM-6 package. A load switch is usually configured for high side switching so that the load can be isolated from the active power source. A P-Channel Power MOSFET, because it does not require its drive voltage above the input voltage, is usually more cost effective than using an N-Channel device in this particular application. A large P-Channel Power MOSFET minimizes voltage drop. By using a small N-Channel device the driving stage is simplified. (optional) (optional) Design Notes R1 is needed to turn off Q2. R2 can be used to soft start the switch in the case the output capacitance Co is small. R2 should be at least 10 times smaller than R1 to guarantee Q1 turns on. By using R1 and R2 a certain amount of current is lost from the input. This bias current loss is given by the equation IBIAS _LOSS = R 1Vin+R2 when the switch is ON. IBIAS_LOSS can be minimized by large R1. R2 and CRSS of Q2 make ramp for slow turn on. If excessive overshoot current occurs due to fast turn on, additional capacitance C1 can be added externally to slow down the turn on. www.onsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com